JPS6242396B2 - - Google Patents

Info

Publication number
JPS6242396B2
JPS6242396B2 JP56075186A JP7518681A JPS6242396B2 JP S6242396 B2 JPS6242396 B2 JP S6242396B2 JP 56075186 A JP56075186 A JP 56075186A JP 7518681 A JP7518681 A JP 7518681A JP S6242396 B2 JPS6242396 B2 JP S6242396B2
Authority
JP
Japan
Prior art keywords
region
impurity region
type
conductivity type
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56075186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57190349A (en
Inventor
Shuichi Kameyama
Koichi Kanzaki
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56075186A priority Critical patent/JPS57190349A/ja
Priority to US06/378,480 priority patent/US4433470A/en
Publication of JPS57190349A publication Critical patent/JPS57190349A/ja
Publication of JPS6242396B2 publication Critical patent/JPS6242396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/40—
    • H10P32/1414—
    • H10P32/171—
    • H10W10/0121—
    • H10W10/13—
    • H10W20/021—

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56075186A 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device Granted JPS57190349A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56075186A JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device
US06/378,480 US4433470A (en) 1981-05-19 1982-05-14 Method for manufacturing semiconductor device utilizing selective etching and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075186A JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device

Publications (2)

Publication Number Publication Date
JPS57190349A JPS57190349A (en) 1982-11-22
JPS6242396B2 true JPS6242396B2 (en:Method) 1987-09-08

Family

ID=13568911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075186A Granted JPS57190349A (en) 1981-05-19 1981-05-19 Manufacture of bipolar semiconductor device

Country Status (1)

Country Link
JP (1) JPS57190349A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727913B2 (ja) * 1988-07-28 1995-03-29 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPS57190349A (en) 1982-11-22

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