JPS623987B2 - - Google Patents

Info

Publication number
JPS623987B2
JPS623987B2 JP56077341A JP7734181A JPS623987B2 JP S623987 B2 JPS623987 B2 JP S623987B2 JP 56077341 A JP56077341 A JP 56077341A JP 7734181 A JP7734181 A JP 7734181A JP S623987 B2 JPS623987 B2 JP S623987B2
Authority
JP
Japan
Prior art keywords
region
fet
thyristor
light
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56077341A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5720471A (en
Inventor
Teihanii Ieno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5720471A publication Critical patent/JPS5720471A/ja
Publication of JPS623987B2 publication Critical patent/JPS623987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
JP7734181A 1980-05-23 1981-05-21 Light spot arcuate type bidirectional thyristor Granted JPS5720471A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803019907 DE3019907A1 (de) 1980-05-23 1980-05-23 Lichtsteuerbarer zweirichtungsthyristor

Publications (2)

Publication Number Publication Date
JPS5720471A JPS5720471A (en) 1982-02-02
JPS623987B2 true JPS623987B2 (en, 2012) 1987-01-28

Family

ID=6103217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7734181A Granted JPS5720471A (en) 1980-05-23 1981-05-21 Light spot arcuate type bidirectional thyristor

Country Status (3)

Country Link
EP (1) EP0040817A1 (en, 2012)
JP (1) JPS5720471A (en, 2012)
DE (1) DE3019907A1 (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3206477A1 (de) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Feldeffektgesteuerter triac
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
DE3345449A1 (de) * 1982-12-21 1984-07-12 International Rectifier Corp., Los Angeles, Calif. Festkoerper-wechselspannungsrelais
JPH07122729A (ja) * 1993-10-25 1995-05-12 Nec Corp フォトサイリスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE338611B (en, 2012) * 1969-09-01 1971-09-13 Asea Ab
US3996475A (en) * 1975-07-28 1976-12-07 Rodriguez Edward T Photoelectric controlling
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPS5720471A (en) 1982-02-02
EP0040817A1 (de) 1981-12-02
DE3019907A1 (de) 1981-12-03

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