JPS6239830B2 - - Google Patents

Info

Publication number
JPS6239830B2
JPS6239830B2 JP55117595A JP11759580A JPS6239830B2 JP S6239830 B2 JPS6239830 B2 JP S6239830B2 JP 55117595 A JP55117595 A JP 55117595A JP 11759580 A JP11759580 A JP 11759580A JP S6239830 B2 JPS6239830 B2 JP S6239830B2
Authority
JP
Japan
Prior art keywords
region
transistor
emitter
base
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55117595A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5740970A (en
Inventor
Hideo Kawasaki
Susumu Sugumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP55117595A priority Critical patent/JPS5740970A/ja
Publication of JPS5740970A publication Critical patent/JPS5740970A/ja
Publication of JPS6239830B2 publication Critical patent/JPS6239830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55117595A 1980-08-25 1980-08-25 Monolithic darlington transistor Granted JPS5740970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117595A JPS5740970A (en) 1980-08-25 1980-08-25 Monolithic darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117595A JPS5740970A (en) 1980-08-25 1980-08-25 Monolithic darlington transistor

Publications (2)

Publication Number Publication Date
JPS5740970A JPS5740970A (en) 1982-03-06
JPS6239830B2 true JPS6239830B2 (enrdf_load_stackoverflow) 1987-08-25

Family

ID=14715694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117595A Granted JPS5740970A (en) 1980-08-25 1980-08-25 Monolithic darlington transistor

Country Status (1)

Country Link
JP (1) JPS5740970A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987157U (ja) * 1982-12-01 1984-06-13 株式会社三社電機製作所 ダ−リントントランジスタ
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ

Also Published As

Publication number Publication date
JPS5740970A (en) 1982-03-06

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