JPH0336308B2 - - Google Patents

Info

Publication number
JPH0336308B2
JPH0336308B2 JP56118035A JP11803581A JPH0336308B2 JP H0336308 B2 JPH0336308 B2 JP H0336308B2 JP 56118035 A JP56118035 A JP 56118035A JP 11803581 A JP11803581 A JP 11803581A JP H0336308 B2 JPH0336308 B2 JP H0336308B2
Authority
JP
Japan
Prior art keywords
region
transistor
collector
base
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56118035A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5818956A (ja
Inventor
Koichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56118035A priority Critical patent/JPS5818956A/ja
Publication of JPS5818956A publication Critical patent/JPS5818956A/ja
Publication of JPH0336308B2 publication Critical patent/JPH0336308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56118035A 1981-07-28 1981-07-28 半導体集積回路 Granted JPS5818956A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56118035A JPS5818956A (ja) 1981-07-28 1981-07-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56118035A JPS5818956A (ja) 1981-07-28 1981-07-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS5818956A JPS5818956A (ja) 1983-02-03
JPH0336308B2 true JPH0336308B2 (enrdf_load_stackoverflow) 1991-05-31

Family

ID=14726431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56118035A Granted JPS5818956A (ja) 1981-07-28 1981-07-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS5818956A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6215682B1 (en) * 1998-09-18 2001-04-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor power converter and its applied apparatus

Also Published As

Publication number Publication date
JPS5818956A (ja) 1983-02-03

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