JPS6237594B2 - - Google Patents
Info
- Publication number
- JPS6237594B2 JPS6237594B2 JP52102562A JP10256277A JPS6237594B2 JP S6237594 B2 JPS6237594 B2 JP S6237594B2 JP 52102562 A JP52102562 A JP 52102562A JP 10256277 A JP10256277 A JP 10256277A JP S6237594 B2 JPS6237594 B2 JP S6237594B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectrode
- region
- semiconductor substrate
- conductivity type
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10256277A JPS5437423A (en) | 1977-08-29 | 1977-08-29 | Solid state pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10256277A JPS5437423A (en) | 1977-08-29 | 1977-08-29 | Solid state pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5437423A JPS5437423A (en) | 1979-03-19 |
JPS6237594B2 true JPS6237594B2 (ko) | 1987-08-13 |
Family
ID=14330660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10256277A Granted JPS5437423A (en) | 1977-08-29 | 1977-08-29 | Solid state pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5437423A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115971U (ko) * | 1978-02-02 | 1979-08-14 |
-
1977
- 1977-08-29 JP JP10256277A patent/JPS5437423A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5437423A (en) | 1979-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3177514B2 (ja) | 固体イメージセンサ | |
US4168444A (en) | Imaging devices | |
JPH1070263A (ja) | 固体撮像素子 | |
US5418387A (en) | Solid-state imaging device with nand cell structure | |
JP2797993B2 (ja) | 固体撮像装置およびその製造方法 | |
EP0453530B1 (en) | Solid-state image sensor | |
KR19990067469A (ko) | 전하 결합 소자 및 그 제조 방법 | |
JPS6237594B2 (ko) | ||
JP2000022119A (ja) | 固体撮像デバイス及びその製造方法 | |
JPH02278874A (ja) | 固体撮像素子及びその製造方法 | |
KR100359767B1 (ko) | 고체촬상소자의 제조 방법 | |
JP3105781B2 (ja) | 固体撮像装置 | |
JP3384509B2 (ja) | 固体撮像素子 | |
JP2936153B2 (ja) | 固体撮像素子の製造方法 | |
JPH04218966A (ja) | 固体撮像装置 | |
JP2000106425A (ja) | 固体撮像素子及びその製造方法 | |
GB1576144A (en) | Methods of manufacturing charge transfer devices | |
JP2877382B2 (ja) | 固体撮像装置 | |
JPH1197666A (ja) | 固体撮像装置およびその製造方法 | |
JP3176300B2 (ja) | 固体撮像装置及びその製造方法 | |
JP2980196B2 (ja) | 固体撮像素子 | |
JP2000260972A (ja) | 固体撮像装置およびその製造方法 | |
JPH0412067B2 (ko) | ||
JP3100624B2 (ja) | 各ピクセルに対して簡易電極構造を備えた非インターレースインターライン転送型ccdイメージセンサ | |
JP2906961B2 (ja) | 固体撮像装置 |