JPS6237537B2 - - Google Patents
Info
- Publication number
- JPS6237537B2 JPS6237537B2 JP53040979A JP4097978A JPS6237537B2 JP S6237537 B2 JPS6237537 B2 JP S6237537B2 JP 53040979 A JP53040979 A JP 53040979A JP 4097978 A JP4097978 A JP 4097978A JP S6237537 B2 JPS6237537 B2 JP S6237537B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- conductivity type
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4097978A JPS54132179A (en) | 1978-04-06 | 1978-04-06 | Complementary insulating gate field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4097978A JPS54132179A (en) | 1978-04-06 | 1978-04-06 | Complementary insulating gate field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54132179A JPS54132179A (en) | 1979-10-13 |
| JPS6237537B2 true JPS6237537B2 (enrdf_load_stackoverflow) | 1987-08-13 |
Family
ID=12595549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4097978A Granted JPS54132179A (en) | 1978-04-06 | 1978-04-06 | Complementary insulating gate field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54132179A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59501766A (ja) * | 1982-09-20 | 1984-10-18 | セミ・プロセシ−ズ・インコ−ポレ−テッド | ラッチアップ保護用のガ−ドバンドを持つｃｍｏｓ集積回路 |
| JPS632370A (ja) * | 1986-06-23 | 1988-01-07 | Nissan Motor Co Ltd | 半導体装置 |
-
1978
- 1978-04-06 JP JP4097978A patent/JPS54132179A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54132179A (en) | 1979-10-13 |