JPS6231814B2 - - Google Patents
Info
- Publication number
- JPS6231814B2 JPS6231814B2 JP55140444A JP14044480A JPS6231814B2 JP S6231814 B2 JPS6231814 B2 JP S6231814B2 JP 55140444 A JP55140444 A JP 55140444A JP 14044480 A JP14044480 A JP 14044480A JP S6231814 B2 JPS6231814 B2 JP S6231814B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- gallium
- tube
- temperature
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P32/00—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55140444A JPS5764923A (en) | 1980-10-09 | 1980-10-09 | Method for diffusing gallium in semiconductor substrate |
| US06/291,042 US4415385A (en) | 1980-08-15 | 1981-08-07 | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55140444A JPS5764923A (en) | 1980-10-09 | 1980-10-09 | Method for diffusing gallium in semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5764923A JPS5764923A (en) | 1982-04-20 |
| JPS6231814B2 true JPS6231814B2 (enExample) | 1987-07-10 |
Family
ID=15268771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55140444A Granted JPS5764923A (en) | 1980-08-15 | 1980-10-09 | Method for diffusing gallium in semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5764923A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2662318B2 (ja) * | 1991-03-13 | 1997-10-08 | 株式会社日立製作所 | 半導体基体への不純物の拡散方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5028752A (enExample) * | 1973-07-13 | 1975-03-24 |
-
1980
- 1980-10-09 JP JP55140444A patent/JPS5764923A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5764923A (en) | 1982-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6589349B2 (en) | Apparatus for forming silicon oxide film and method of forming silicon oxide film | |
| JP5355533B2 (ja) | n型SiC単結晶の製造方法 | |
| US5279973A (en) | Rapid thermal annealing for semiconductor substrate by using incoherent light | |
| CN116209793A (zh) | 用于培育晶体的方法 | |
| EP1375423A1 (en) | Low nitrogen concentration carbonaceous material and manufacturing method thereof | |
| US4415385A (en) | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel | |
| JPS6231814B2 (enExample) | ||
| JP4022997B2 (ja) | 3−5族化合物半導体結晶へのZn拡散方法及び拡散装置 | |
| US5434090A (en) | Processing chamber for processing semiconductor substrates | |
| TWI689634B (zh) | 矽單晶的製造方法 | |
| JP2004256392A (ja) | 化合物半導体結晶の製造方法および化合物半導体結晶 | |
| US3997379A (en) | Diffusion of conductivity modifiers into a semiconductor body | |
| US6183553B1 (en) | Process and apparatus for preparation of silicon crystals with reduced metal content | |
| JPH0250619B2 (enExample) | ||
| JP3794816B2 (ja) | 真空熱処理方法 | |
| JPS6136699B2 (enExample) | ||
| JP2662318B2 (ja) | 半導体基体への不純物の拡散方法 | |
| JP3119708B2 (ja) | 熱処理装置および熱処理方法 | |
| JPS6230686B2 (enExample) | ||
| JPH07237992A (ja) | 化合物半導体単結晶の製造方法 | |
| JPH1187254A (ja) | 真空熱処理装置 | |
| CN116555917A (zh) | 改善锑化镓晶片内部缺陷的退火工艺 | |
| JPH08203840A (ja) | 半導体ウェハへのアルミニウムの拡散装置及び拡散方法 | |
| JPH0982654A (ja) | 半導体装置の製造方法 | |
| JPH0799166A (ja) | 封管拡散法 |