JPS6231814B2 - - Google Patents

Info

Publication number
JPS6231814B2
JPS6231814B2 JP55140444A JP14044480A JPS6231814B2 JP S6231814 B2 JPS6231814 B2 JP S6231814B2 JP 55140444 A JP55140444 A JP 55140444A JP 14044480 A JP14044480 A JP 14044480A JP S6231814 B2 JPS6231814 B2 JP S6231814B2
Authority
JP
Japan
Prior art keywords
diffusion
gallium
tube
temperature
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55140444A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5764923A (en
Inventor
Osamu Saito
Hideo Pponma
Koichi Inoe
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14044480A priority Critical patent/JPS5764923A/ja
Priority to US06/291,042 priority patent/US4415385A/en
Publication of JPS5764923A publication Critical patent/JPS5764923A/ja
Publication of JPS6231814B2 publication Critical patent/JPS6231814B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14044480A 1980-08-15 1980-10-09 Method for diffusing gallium in semiconductor substrate Granted JPS5764923A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14044480A JPS5764923A (en) 1980-10-09 1980-10-09 Method for diffusing gallium in semiconductor substrate
US06/291,042 US4415385A (en) 1980-08-15 1981-08-07 Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14044480A JPS5764923A (en) 1980-10-09 1980-10-09 Method for diffusing gallium in semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5764923A JPS5764923A (en) 1982-04-20
JPS6231814B2 true JPS6231814B2 (enrdf_load_stackoverflow) 1987-07-10

Family

ID=15268771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14044480A Granted JPS5764923A (en) 1980-08-15 1980-10-09 Method for diffusing gallium in semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5764923A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2662318B2 (ja) * 1991-03-13 1997-10-08 株式会社日立製作所 半導体基体への不純物の拡散方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028752A (enrdf_load_stackoverflow) * 1973-07-13 1975-03-24

Also Published As

Publication number Publication date
JPS5764923A (en) 1982-04-20

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