JPH0455156B2 - - Google Patents
Info
- Publication number
- JPH0455156B2 JPH0455156B2 JP22820385A JP22820385A JPH0455156B2 JP H0455156 B2 JPH0455156 B2 JP H0455156B2 JP 22820385 A JP22820385 A JP 22820385A JP 22820385 A JP22820385 A JP 22820385A JP H0455156 B2 JPH0455156 B2 JP H0455156B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- single crystal
- cdte
- temperature
- crystal cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 83
- 229910004613 CdTe Inorganic materials 0.000 claims description 66
- 239000013078 crystal Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 24
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000003708 ampul Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010581 sealed tube method Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22820385A JPS6287499A (ja) | 1985-10-14 | 1985-10-14 | 単結晶ＣｄＴｅの熱処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22820385A JPS6287499A (ja) | 1985-10-14 | 1985-10-14 | 単結晶ＣｄＴｅの熱処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6287499A JPS6287499A (ja) | 1987-04-21 |
| JPH0455156B2 true JPH0455156B2 (enrdf_load_stackoverflow) | 1992-09-02 |
Family
ID=16872811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22820385A Granted JPS6287499A (ja) | 1985-10-14 | 1985-10-14 | 単結晶ＣｄＴｅの熱処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6287499A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379902C (zh) * | 2006-08-16 | 2008-04-09 | 中国科学技术大学 | 碲化镉单晶的低温溶剂热生长方法 |
| FR2905706B1 (fr) * | 2006-09-07 | 2009-04-17 | Commissariat Energie Atomique | Procede d'elimination par recuit des precipites dans un materiau semi conducteur ii vi |
| JP6456782B2 (ja) * | 2015-06-23 | 2019-01-23 | Ｊｘ金属株式会社 | ＣｄＴｅ系化合物半導体単結晶及びその製造方法 |
-
1985
- 1985-10-14 JP JP22820385A patent/JPS6287499A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6287499A (ja) | 1987-04-21 |
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