JPS6230706B2 - - Google Patents

Info

Publication number
JPS6230706B2
JPS6230706B2 JP56108734A JP10873481A JPS6230706B2 JP S6230706 B2 JPS6230706 B2 JP S6230706B2 JP 56108734 A JP56108734 A JP 56108734A JP 10873481 A JP10873481 A JP 10873481A JP S6230706 B2 JPS6230706 B2 JP S6230706B2
Authority
JP
Japan
Prior art keywords
wiring
terminal
layer
output
injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56108734A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589358A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56108734A priority Critical patent/JPS589358A/ja
Publication of JPS589358A publication Critical patent/JPS589358A/ja
Publication of JPS6230706B2 publication Critical patent/JPS6230706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56108734A 1981-07-09 1981-07-09 半導体集積回路装置 Granted JPS589358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56108734A JPS589358A (ja) 1981-07-09 1981-07-09 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56108734A JPS589358A (ja) 1981-07-09 1981-07-09 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS589358A JPS589358A (ja) 1983-01-19
JPS6230706B2 true JPS6230706B2 (enrdf_load_stackoverflow) 1987-07-03

Family

ID=14492167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56108734A Granted JPS589358A (ja) 1981-07-09 1981-07-09 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS589358A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6440302U (enrdf_load_stackoverflow) * 1987-08-31 1989-03-10

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935030A (enrdf_load_stackoverflow) * 1972-08-03 1974-04-01
NL7612222A (nl) * 1976-11-04 1978-05-08 Philips Nv Geintegreerde schakeling.
JPS5375737A (en) * 1976-12-17 1978-07-05 Toshiba Corp Injection type bipolar memory cell
JPS6043024B2 (ja) * 1978-12-30 1985-09-26 富士通株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6440302U (enrdf_load_stackoverflow) * 1987-08-31 1989-03-10

Also Published As

Publication number Publication date
JPS589358A (ja) 1983-01-19

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