JPS6230493B2 - - Google Patents
Info
- Publication number
- JPS6230493B2 JPS6230493B2 JP55071805A JP7180580A JPS6230493B2 JP S6230493 B2 JPS6230493 B2 JP S6230493B2 JP 55071805 A JP55071805 A JP 55071805A JP 7180580 A JP7180580 A JP 7180580A JP S6230493 B2 JPS6230493 B2 JP S6230493B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- sample
- irradiated
- resist
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052733 gallium Inorganic materials 0.000 claims description 30
- -1 gallium ions Chemical class 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims description 2
- 239000003039 volatile agent Substances 0.000 claims 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180580A JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180580A JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56167330A JPS56167330A (en) | 1981-12-23 |
| JPS6230493B2 true JPS6230493B2 (US06521211-20030218-C00004.png) | 1987-07-02 |
Family
ID=13471142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7180580A Granted JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167330A (US06521211-20030218-C00004.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0223187U (US06521211-20030218-C00004.png) * | 1988-07-25 | 1990-02-15 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976428A (ja) * | 1982-10-26 | 1984-05-01 | Nippon Telegr & Teleph Corp <Ntt> | 微細パタ−ン形成法 |
| JPH0715870B2 (ja) * | 1983-11-12 | 1995-02-22 | 富士通株式会社 | パターン形成方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828121A (US06521211-20030218-C00004.png) * | 1971-12-22 | 1973-04-13 | ||
| JPS5028237A (US06521211-20030218-C00004.png) * | 1973-07-11 | 1975-03-22 | ||
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS53142180A (en) * | 1977-05-18 | 1978-12-11 | Agency Of Ind Science & Technol | Pattern transcribing method and transcribing intermediate body |
-
1980
- 1980-05-29 JP JP7180580A patent/JPS56167330A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828121A (US06521211-20030218-C00004.png) * | 1971-12-22 | 1973-04-13 | ||
| JPS5028237A (US06521211-20030218-C00004.png) * | 1973-07-11 | 1975-03-22 | ||
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS53142180A (en) * | 1977-05-18 | 1978-12-11 | Agency Of Ind Science & Technol | Pattern transcribing method and transcribing intermediate body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0223187U (US06521211-20030218-C00004.png) * | 1988-07-25 | 1990-02-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56167330A (en) | 1981-12-23 |
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