JPS6230493B2 - - Google Patents
Info
- Publication number
- JPS6230493B2 JPS6230493B2 JP55071805A JP7180580A JPS6230493B2 JP S6230493 B2 JPS6230493 B2 JP S6230493B2 JP 55071805 A JP55071805 A JP 55071805A JP 7180580 A JP7180580 A JP 7180580A JP S6230493 B2 JPS6230493 B2 JP S6230493B2
- Authority
- JP
- Japan
- Prior art keywords
- gallium
- sample
- irradiated
- resist
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052733 gallium Inorganic materials 0.000 claims description 30
- -1 gallium ions Chemical class 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 239000002861 polymer material Substances 0.000 claims description 2
- 239000003039 volatile agent Substances 0.000 claims 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 12
- 230000018109 developmental process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は半導体部品などの製造に用いられるリ
ソグラフ技術の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in lithographic techniques used in the manufacture of semiconductor components and the like.
IC、Trなどの半導体部品、磁気バブル素子、
表面弾性波素子などの製造においては、被加工試
料上に微細パタンを形成するためにリソグラフ技
術が用いられる。これは試料上に感光性有機高分
子材料などのレジストと呼ばれる物質を薄く塗布
し、加工すべきパタンに応じて選択的に紫外線を
照射したのち、有機溶剤などの現像を行なうもの
である。近年、加工すべきパタンの微細化につれ
て照射する光を、より短波長の遠紫外線、Ｘ線又
は高加速電子線に替えた方法が開発されている。
特に高加速電子線は電磁界により自由に集束、偏
向が可能であり、加工すべきパタンデータをもと
に照射位置を制御することにより、直接に微細パ
タンを創成することができるので有望な技術とな
つている。しかし高加速電子はレジストに照射さ
れた後、レジスト内およびレジストと被加工試料
の界面において散乱されるため、いかに照射する
電子ビームを細く集束しても、感光されるレジス
トの寸法は拡がりを生じ、パタンの微細化に限界
がある。これに対し、電子よりも重いイオンを用
いれば、散乱は極めて小さく、極めて微細なパタ
ンを形成できる。この目的のためには低融点金属
であるガリウムを用いた電界電離形（又は電離蒸
発形とも呼ばれる）イオン源が適している。しか
しこの方法では照射されたガリウムイオンが有機
高分子レジストの表面に近い層にしか入らないこ
と、ガリウムと有機高分子が化学的に結合するこ
となどにより、通常の有機溶剤による現像では、
ガリウムと結合したレジストが結晶状に偏析した
り、非照射部に転移析出したり、また微細パタン
の基底部が溶解してパタンが剥離したりするた
め、良好な微細パタンの形成は困難であつた。 Semiconductor parts such as IC and Tr, magnetic bubble elements,
In manufacturing surface acoustic wave devices and the like, lithography technology is used to form fine patterns on a processed sample. This involves coating a sample with a thin layer of a substance called a resist, such as a photosensitive organic polymer material, selectively irradiating it with ultraviolet light depending on the pattern to be processed, and then developing it with an organic solvent. In recent years, as the pattern to be processed becomes finer, methods have been developed in which the irradiation light is replaced with shorter wavelength far ultraviolet rays, X-rays, or highly accelerated electron beams.
In particular, highly accelerated electron beams can be freely focused and deflected by electromagnetic fields, and by controlling the irradiation position based on the pattern data to be processed, it is possible to directly create fine patterns, making it a promising technology. It is becoming. However, after the highly accelerated electrons are irradiated onto the resist, they are scattered within the resist and at the interface between the resist and the workpiece, so no matter how narrowly the irradiating electron beam is focused, the dimensions of the exposed resist will expand. , there is a limit to the miniaturization of patterns. On the other hand, if ions heavier than electrons are used, scattering is extremely small and extremely fine patterns can be formed. For this purpose, a field ionization type (also called ionization evaporation type) ion source using gallium, which is a low melting point metal, is suitable. However, with this method, the irradiated gallium ions only enter the layer close to the surface of the organic polymer resist, and the gallium and organic polymer are chemically bonded.
It is difficult to form a good fine pattern because the resist combined with gallium segregates into crystals, dislocates and precipitates in non-irradiated areas, and the base of the fine pattern dissolves and the pattern peels off. Ta.
本発明は以上のような欠点を取り除いて、良好
な微細パタンを形成する方法を提供するものであ
つて、その要旨は高加速ガリウムイオンを選択的
に照射した有機高分子レジスト膜を酸素イオン又
は酸素プラズマによつて現像するものである。 The present invention eliminates the above-mentioned drawbacks and provides a method for forming a good fine pattern. It is developed using oxygen plasma.
以下、本発明の実施例を図面を参照しながら説
明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明方法において試料にガリウムイ
オンを選択的に照射するための装置の１例を示す
概略構成図であつて、１は先端を尖らせたタング
ステン線、２は金属ガリウム、３はガリウム容
器、４はヒータ、５は引出電極で、中心にタング
ステン線１の尖つた先端と対向する丸い小孔を有
している。ヒータ４に電源６を接続すれば、ガリ
ウム２は溶融して、タングステン線１の尖つた先
端を薄くぬらす。つぎに電源７によつて引出電柱
５に（−）、タングステン線１に（＋）の高電圧
を加えれば、タングステン線１の先端からガリウ
ムイオンビーム８が放射される。ガリウムイオン
ビーム８は金属製の静電レンズ極板９ａ，９ｂの
中心開口を通過する際、電源１０による静電界に
よつて集束され、試料１１の表面に微細スポツト
となつて照射される。この微細スポツトは２枚の
対向する金属板からなる偏向電柱１２ａおよびこ
れと直角に配置された同じく２枚の対向する金属
板からなる偏向電柱１２ｂに夫々接続された偏向
信号電源１３ａ，１３ｂの電圧によつて任意に偏
向され、試料１１上の任意の点を選択的に照射し
得る。試料１１は試料台１４を通して電気的に接
地される。なお電源６，７，１０，１３以外の部
分は図示しない容器によつて高真空の内に置かれ
ている。ガリウムイオンを選択的に照射する方法
としては、パタン形状に応じた孔をあけた金属板
を試料上に密着して配置し、その上から一面にガ
リウムイオンを照射する方法もあり、第１図によ
つて説明した照射方法は、本発明を拘束するもの
ではない。 FIG. 1 is a schematic diagram showing an example of an apparatus for selectively irradiating a sample with gallium ions in the method of the present invention, in which 1 is a tungsten wire with a sharp tip, 2 is metal gallium, and 3 is a tungsten wire with a sharp tip. A gallium container, 4 a heater, and 5 an extraction electrode each have a small round hole in the center facing the sharp tip of the tungsten wire 1. When a power source 6 is connected to the heater 4, the gallium 2 is melted and the sharp tip of the tungsten wire 1 is thinly wetted. Next, when a high voltage (-) is applied to the extraction pole 5 and a (+) voltage is applied to the tungsten wire 1 by the power source 7, a gallium ion beam 8 is emitted from the tip of the tungsten wire 1. When the gallium ion beam 8 passes through the center openings of the metal electrostatic lens plates 9a and 9b, it is focused by the electrostatic field from the power source 10 and is irradiated onto the surface of the sample 11 in the form of a fine spot. This fine spot is caused by the voltage of the deflection signal power supplies 13a and 13b connected to the deflection power pole 12a made of two metal plates facing each other and the deflection power pole 12b made of two metal plates placed at right angles thereto. It is possible to selectively irradiate any point on the sample 11 by deflecting the beam arbitrarily. The sample 11 is electrically grounded through the sample stage 14. Note that the parts other than the power supplies 6, 7, 10, and 13 are placed in a high vacuum in a container (not shown). As a method of selectively irradiating gallium ions, there is a method in which a metal plate with holes corresponding to the pattern shape is placed in close contact with the sample and gallium ions are irradiated over the entire surface, as shown in Figure 1. The irradiation method described by is not a constraint on the present invention.
第２図は選択的にガリウムイオンを照射した試
料の断面を示す図であつて、試料として最も一般
的な、表面を酸化させたシリコンウエハを例とし
て示した。図において１５はシリコンウエハ、１
６は酸化シリコンの皮膜、１７はレジスト層、１
８はガリウムイオンを照射されたレジスト部分を
示す。酸化シリコン皮膜１６、レジスト層１７の
厚さは目的によつて異なるが0.5μｍ程度、ガリ
ウム照射部１８の深さはレジスト材料、ガリウム
イオンの加速電圧によつて異なるがガリウムイオ
ンの加速電圧50KVでPMMAレジストを使用した
とき約0.1μｍ程度である。 FIG. 2 is a diagram showing a cross section of a sample selectively irradiated with gallium ions, and shows as an example a silicon wafer with an oxidized surface, which is the most common sample. In the figure, 15 is a silicon wafer, 1
6 is a silicon oxide film, 17 is a resist layer, 1
8 shows a resist portion irradiated with gallium ions. The thickness of the silicon oxide film 16 and the resist layer 17 varies depending on the purpose, but is about 0.5 μm, and the depth of the gallium irradiation part 18 varies depending on the resist material and the gallium ion acceleration voltage, but it can be applied at a gallium ion acceleration voltage of 50 KV. When PMMA resist is used, the thickness is about 0.1 μm.
第３図は本発明方法で現像に使用するプラズマ
装置の概略構成図であつて、１９は円筒形の石英
容器、２０は容器１９を密閉する石英板の蓋、２
１は図示しな真空ポンプに接続された排気孔、２
２は図示しないガス供給源に接続されたガス導入
孔、２３は試料ホルダ、２４は第２図に示した試
料、２４ａ，２５ｂは容器１９の外側を夫々上半
分、下半分で包む金属板の電極、２６は高周波電
源である。容器１９を密閉して排気孔２１から排
気し、ガス導入孔２２から少量の酸素ガスを連続
的に供給すれば、容器１９内は低圧力の酸素で充
満される。そこで電極２５に高周波電圧を加えれ
ば容器１９内では放電が生じ、酸素プラズマが発
生する。酸素プラズマは化学的に極めて活性であ
り、常温においても多くの物質をその表面から酸
化させる作用がある。有機高分子レジストは炭
素、酸素、水素のみ、又はこれらの主成分とした
材料であり、酸素プラズマによつて容易に分解さ
れ炭酸ガスと水を発生して気化・消滅する。従つ
てガリウムイオンを照射されていない部分のレジ
ストは適当な時間、（30秒〜２、３分間）、酸素プ
ラズマ中に置かれることで、すべて取り去られ
る。一方ガリウムイオンが照射された部分では酸
素プラズマによつて酸素ガリウムや酸素とガリウ
ムを含む不揮発性化合物が生成し、これが膜状に
形成されて行くのでその膜の下のレジストの分解
を遅れさせる。この状態は第４図ａのグラフに示
される。第４図ａにおいて横軸は時間、縦軸は各
時刻におけるレジストの膜厚とする。線分２７は
ガリウムイオンの照射されていない部分の膜厚の
変化、線分２８はガリウムイオンの照射された部
分の膜厚の変化を示す。線分２７，２８ｂの夫々
の傾斜はレジストの種類、ガス圧、高周波電力、
ガリウムイオンの照射量で、また、線分２８の変
曲点２９の位置はガリウムイオンの照射量で夫々
変化する。この図において時間Ｔで示される時刻
ではガリウムイオン照射部のみが残り、現像が終
了することが判る。 FIG. 3 is a schematic configuration diagram of a plasma apparatus used for development in the method of the present invention, in which 19 is a cylindrical quartz container, 20 is a quartz plate lid for sealing the container 19, and 2
1 is an exhaust hole connected to a vacuum pump (not shown); 2
2 is a gas introduction hole connected to a gas supply source (not shown), 23 is a sample holder, 24 is the sample shown in FIG. 2, and 24a and 25b are metal plates that wrap the outside of the container 19 in the upper and lower halves, respectively. The electrode 26 is a high frequency power source. By sealing the container 19, evacuating the air through the exhaust hole 21, and continuously supplying a small amount of oxygen gas through the gas introduction hole 22, the inside of the container 19 is filled with low-pressure oxygen. Therefore, when a high frequency voltage is applied to the electrode 25, a discharge occurs within the container 19, and oxygen plasma is generated. Oxygen plasma is chemically extremely active and has the effect of oxidizing many substances from their surfaces even at room temperature. Organic polymer resists are materials containing only carbon, oxygen, and hydrogen, or their main components, and are easily decomposed by oxygen plasma, producing carbon dioxide gas and water, and vaporizing and disappearing. Therefore, all of the resist in the areas not irradiated with gallium ions is removed by placing it in oxygen plasma for an appropriate amount of time (30 seconds to a few minutes). On the other hand, in the area irradiated with gallium ions, oxygen gallium or a nonvolatile compound containing oxygen and gallium is generated by the oxygen plasma, and this is formed into a film, which delays the decomposition of the resist underneath the film. This situation is illustrated in the graph of FIG. 4a. In FIG. 4a, the horizontal axis is time, and the vertical axis is the resist film thickness at each time. A line segment 27 indicates a change in film thickness in a portion not irradiated with gallium ions, and a line segment 28 indicates a change in film thickness in a portion irradiated with gallium ions. The slopes of the line segments 27 and 28b depend on the type of resist, gas pressure, high frequency power,
The position of the inflection point 29 of the line segment 28 changes depending on the amount of gallium ion irradiation, and the position of the inflection point 29 of the line segment 28 changes depending on the amount of gallium ion irradiation. It can be seen that at the time indicated by time T in this figure, only the gallium ion irradiated area remains and the development is complete.
第４図ｂは、第４図ａにおいて概念を示した現
像過程の実験例の一つである。この例において現
像前のレジスト膜厚は１μｍであり、図から明ら
かなように９分で現像が終了している。ガリウム
イオンの照射量はイオン電荷で示されて居り、
0.8×10-4c/cm2の照射量でも、現像終了時におけ
るガリウムイオン照射部の残膜厚は0.4μｍであ
り、以後の半導体部品製造工程に十分な厚さであ
ることが明らかである。更に照射量を1.2×10-4
c/cm2以上とすれば、残膜厚は0.8μｍ以上と極め
て良好なパタン形成が可能であり、本発明の優れ
た効果を示している。なお、この例において、酸
素プラズマ槽の圧力は0.7Torr、入力高周波電力
は200W、使用レジストはPMMA（ポリメチルメ
タクリレート）とした。 FIG. 4b is one of the experimental examples of the developing process whose concept is shown in FIG. 4a. In this example, the resist film thickness before development was 1 μm, and as is clear from the figure, development was completed in 9 minutes. The irradiation amount of gallium ions is indicated by the ion charge,
Even with an irradiation dose of 0.8×10 -4 c/cm 2 , the remaining film thickness of the gallium ion irradiated area at the end of development was 0.4 μm, which is clearly sufficient for the subsequent semiconductor component manufacturing process. . Furthermore, the irradiation dose was increased to 1.2×10 -4
When the thickness is c/cm 2 or more, the remaining film thickness is 0.8 μm or more, which allows extremely good pattern formation, which shows the excellent effects of the present invention. In this example, the pressure of the oxygen plasma bath was 0.7 Torr, the input high frequency power was 200 W, and the resist used was PMMA (polymethyl methacrylate).
第５図は第３図で説明した装置に代つて本発明
方法で現像に使用するイオンスパツタ装置の概略
構成図であつて、３０はステンレス鋼などで作ら
れた容器、３１は図示しないガス供給源に接続さ
れたガス導入孔、３２は図示しない真空ポンプに
接続された排気孔、３３は容器３０を密閉する
蓋、３４は蓋３３に絶縁して取付けられた電極、
３５は容器３０に絶縁して取付けられた電極で、
その上に試料２４を置くように作られている。３
６は直流電流を通さないコンデンサ、３７は高周
波電源である。この動作は、まず容器３０を密閉
し、排気孔３２から排気しつつガス導入孔から少
量の酸素ガスを供給し、容器内を低圧の酸素で充
満させ、しかる後電極３４，３５間に高周波電源
３７により高周波電圧を加える。それにより容器
３０内には酸素プラズマが発生する。しかし、プ
ラズマ中の電子は軽いため高周波電場に対応して
電極３５に達してもコンデンサ３６のために電流
となつて流れず電極３５および試料２４の表面に
蓄積される。そのため電極３５は電極３４に対し
て負の電位に保たれる。従つて電極３５の上部の
空間からは電子が追い出され、中性の酸素粒子と
酸素イオンのみが存在するようになる。この酸素
イオンは電極３５の負電圧に引かれて垂直に電極
３５および試料２４の表面に衝突する。酸素イオ
ンは化学的に活性であり、先に第４図ａについて
説明したように、ガリウムイオン未照射部のレジ
ストを取り去る。しかし、この場合には酸素イオ
ンの衝突によるスパツタ現象を伴なうため、第４
図ａの線分２８ａの部分が若干右下りになるが極
く僅かであつて問題にならない。その代り、酸素
イオンは試料２４に垂直に入射するため形成され
たパタンの端部が垂直に形成される特長を有す
る。 FIG. 5 is a schematic configuration diagram of an ion sputtering device used for development in the method of the present invention in place of the device explained in FIG. 32 is an exhaust hole connected to a vacuum pump (not shown); 33 is a lid that seals the container 30; 34 is an electrode that is insulated and attached to the lid 33;
35 is an electrode that is insulated and attached to the container 30;
It is made so that the sample 24 is placed on top of it. 3
6 is a capacitor that does not pass direct current, and 37 is a high frequency power source. This operation first seals the container 30, supplies a small amount of oxygen gas from the gas introduction hole while exhausting air from the exhaust hole 32, fills the inside of the container with low-pressure oxygen, and then applies a high-frequency power supply between the electrodes 34 and 35. 37 to apply a high frequency voltage. As a result, oxygen plasma is generated within the container 30. However, since the electrons in the plasma are light, even if they reach the electrode 35 in response to the high frequency electric field, they do not flow as a current due to the capacitor 36 and are accumulated on the electrode 35 and the surface of the sample 24. Therefore, the electrode 35 is kept at a negative potential with respect to the electrode 34. Therefore, electrons are expelled from the space above the electrode 35, leaving only neutral oxygen particles and oxygen ions. The oxygen ions are attracted by the negative voltage of the electrode 35 and collide vertically with the electrode 35 and the surface of the sample 24. Oxygen ions are chemically active, and remove the resist in areas that have not been irradiated with gallium ions, as previously explained with reference to FIG. 4a. However, in this case, a spatter phenomenon occurs due to the collision of oxygen ions, so the
Although the line segment 28a in FIG. Instead, since the oxygen ions are incident on the sample 24 perpendicularly, the pattern has a feature in that the edges of the formed pattern are vertically formed.
つぎに本発明方法の更に望ましい応用について
説明する。 Next, more desirable applications of the method of the present invention will be explained.
第３図、第５図で説明した装置において、CF4
などのガスを導入すれば酸化シリコンが弗化シリ
コンとなつて気化し取り除かれることは知られて
いる。従つて第３図又は第５図について説明した
本発明方法による現像を行なつた後で、酸素ガス
の導入をやめ、代りにCF4ガスを導入して放電を
行なえば、レジストの取り除かれた部分の酸化シ
リコン皮膜１６（第２図）のみが取り除かれ、結
局、ガリウムイオンを選択的に照射したパタンと
同形のパタンを酸化シリコン皮膜に形成すること
ができる。この方法によれば現像からエツチング
までの工程を１つの装置で連続して行なうことが
できる。 In the apparatus explained in Fig. 3 and Fig. 5, CF 4
It is known that by introducing a gas such as, silicon oxide becomes silicon fluoride, vaporizes, and is removed. Therefore, after performing the development according to the method of the present invention as explained with reference to FIG. 3 or FIG. Only a portion of the silicon oxide film 16 (FIG. 2) is removed, and as a result, a pattern having the same shape as the pattern selectively irradiated with gallium ions can be formed on the silicon oxide film. According to this method, the steps from development to etching can be performed continuously in one apparatus.
以上説明したように本発明方法によれば、電子
ビームよりもレジスト内での散乱の極めて少ない
ガリウムイオンビームによつて電子ビームでは困
難な微細なパタンを容易に形成することが出来、
従来よりも高性能、低消費電力、高集積度の素子
を製造することができるばかりでなく、同一装置
内で現像とエツチングを連続して行なうことが可
能となり、生産性の向上、試料の移動による汚染
防止が達せられ、素子製造に多大の利点を生むこ
とができる。 As explained above, according to the method of the present invention, a fine pattern that is difficult to form with an electron beam can be easily formed using a gallium ion beam that scatters within the resist much less than an electron beam.
Not only is it possible to manufacture devices with higher performance, lower power consumption, and higher integration than before, but it has also become possible to perform development and etching continuously in the same device, improving productivity and facilitating sample movement. It is possible to prevent contamination caused by oxidation, which can bring great advantages to device manufacturing.
図面は本発明方法を説明するための図であつ
て、第１図は試料に対してガリウムイオンビーム
を選択的に照射する装置の概略構成図、第２図は
ガリウムイオンを選択的に照射した試料の断面、
第３図はレジストの現像を行なうための装置の概
略構成図、第４図ａはレジストの現像過程を示す
グラフ、第４図ｂは第４図ａにおいて概念を示し
た現像過程の具体的な実験結果を示す図、第５図
はレジストの現像を行なうための他の装置の概略
構成図である。
１……タングステン線、２……金属ガリウム、
３……ガリウム容器、４……ヒータ、５……引出
電極、６……電源、７……電源、８……ガリウム
イオンビーム、９……静電レンズ、１０……電
源、１１……試料、１２……偏向電極、１３……
偏向信号電源、１４……試料台、１５……シリコ
ンウエハ、１６……酸化シリコン皮膜、１７……
レジスト層、１８……ガリウムイオンを照射され
たレジスト部、１９……容器、２０……蓋、２１
……排気孔、２２……ガス導入孔、２３……試料
ホルダ、２４……試料、２５……電極、２６……
高周波電源、２７……線分、２８……線分、２９
……変曲点、３０……容器、３１……ガス導入
孔、３２……排気孔、３３……蓋、３４……電
極、３５……電極、３６……コンデンサ、３７…
…高周波電源。
The drawings are for explaining the method of the present invention, in which Fig. 1 is a schematic diagram of an apparatus for selectively irradiating a sample with a gallium ion beam, and Fig. 2 is a schematic diagram of an apparatus for selectively irradiating a sample with a gallium ion beam. cross section of the sample,
Fig. 3 is a schematic configuration diagram of an apparatus for developing resist, Fig. 4a is a graph showing the resist development process, and Fig. 4b is a concrete diagram of the developing process conceptually shown in Fig. 4a. FIG. 5, which is a diagram showing the experimental results, is a schematic diagram of another apparatus for developing the resist. 1...Tungsten wire, 2...Metal gallium,
3... Gallium container, 4... Heater, 5... Extraction electrode, 6... Power source, 7... Power source, 8... Gallium ion beam, 9... Electrostatic lens, 10... Power source, 11... Sample , 12... Deflection electrode, 13...
Deflection signal power supply, 14...sample stage, 15...silicon wafer, 16...silicon oxide film, 17...
Resist layer, 18... Resist portion irradiated with gallium ions, 19... Container, 20... Lid, 21
... Exhaust hole, 22 ... Gas introduction hole, 23 ... Sample holder, 24 ... Sample, 25 ... Electrode, 26 ...
High frequency power supply, 27... line segment, 28... line segment, 29
... Inflection point, 30 ... Container, 31 ... Gas introduction hole, 32 ... Exhaust hole, 33 ... Lid, 34 ... Electrode, 35 ... Electrode, 36 ... Capacitor, 37 ...
...High frequency power supply.
Claims (1)
レジストを薄く塗布し、該試料に加速されたガリ
ウムイオンを選択的に照射する第１の工程と、該
照射された試料を酸素プラズマ内にさらすことに
よつて、ガリウムイオンの照射されていない部分
のレジストを取り去ると同時に、ガリウムイオン
の照射された部分のガリウムを酸化して不揮発性
化合物を形成することにより該ガリウムイオンの
照射された部分が残るようにして現像を行なう第
２の工程とを有することを特徴とする微細パタン
形成方法。 ２ 前記第２の工程として、前記照射された試料
に酸素イオンを衝突させることにより現像を行な
うことを特徴とする特許請求の範囲第１項記載の
微細パタン形成方法。[Claims] 1. A first step of thinly applying a resist made of an organic polymer material to the surface of a processed sample and selectively irradiating the sample with accelerated gallium ions, and the irradiated sample. By exposing the gallium ions to oxygen plasma, the resist in the areas not irradiated with gallium ions is removed, and at the same time, the gallium in the irradiated areas is oxidized to form a non-volatile compound, thereby removing the gallium ions. a second step of developing so that the irradiated portion remains. 2. The method for forming a fine pattern according to claim 1, wherein, in the second step, development is performed by colliding oxygen ions with the irradiated sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180580A JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180580A JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56167330A JPS56167330A (en) | 1981-12-23 |
| JPS6230493B2 true JPS6230493B2 (en) | 1987-07-02 |
Family
ID=13471142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7180580A Granted JPS56167330A (en) | 1980-05-29 | 1980-05-29 | Fine pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167330A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0223187U (en) * | 1988-07-25 | 1990-02-15 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976428A (en) * | 1982-10-26 | 1984-05-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
| JPH0715870B2 (en) * | 1983-11-12 | 1995-02-22 | 富士通株式会社 | Pattern formation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828121A (en) * | 1971-12-22 | 1973-04-13 | ||
| JPS5028237A (en) * | 1973-07-11 | 1975-03-22 | ||
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS53142180A (en) * | 1977-05-18 | 1978-12-11 | Agency Of Ind Science & Technol | Pattern transcribing method and transcribing intermediate body |
-
1980
- 1980-05-29 JP JP7180580A patent/JPS56167330A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4828121A (en) * | 1971-12-22 | 1973-04-13 | ||
| JPS5028237A (en) * | 1973-07-11 | 1975-03-22 | ||
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS53142180A (en) * | 1977-05-18 | 1978-12-11 | Agency Of Ind Science & Technol | Pattern transcribing method and transcribing intermediate body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0223187U (en) * | 1988-07-25 | 1990-02-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56167330A (en) | 1981-12-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6007969A (en) | Ultra-fine microfabrication method using an energy beam | |
| JP2002289583A (en) | Beam treatment device | |
| JPH09139364A (en) | Neutral particle beam processor | |
| US5708267A (en) | Processing method using fast atom beam | |
| JPS6230493B2 (en) | ||
| TW413856B (en) | Electron-beam cell projection aperture formation method | |
| JPS58124230A (en) | Forming method for ultrafine pattern | |
| JP2730269B2 (en) | Semiconductor device manufacturing equipment | |
| JPH05279844A (en) | Laser abrasion device | |
| US6709605B2 (en) | Etching method | |
| JPH0437129A (en) | Etching and device thereof | |
| JP3390181B2 (en) | Method for generating compound thin film pattern using high-intensity focused ion beam | |
| JPH10274700A (en) | Method for ultramicro machining | |
| JP2699196B2 (en) | Method of manufacturing mask for X-ray exposure | |
| JPH05283369A (en) | Fine processing device | |
| JP2890431B2 (en) | Superconducting circuit manufacturing method | |
| JP4405201B2 (en) | Two-dimensional patterning method and electronic device manufacturing method using the same | |
| JPH03141632A (en) | Formation of pattern and manufacture of semiconductor device | |
| JPS62229844A (en) | Thin-film deposition method | |
| WO2006071861A2 (en) | Multi-pixel electron microbeam irradiator systems and methods for selectively irradiating predetermined locations | |
| JPS63288017A (en) | Formation of fine pattern | |
| JPS6154631A (en) | Etching process | |
| JPS61256632A (en) | Formation of fine pattern | |
| JP2968138B2 (en) | Dry etching method | |
| JPS6060725A (en) | Forming method of pattern |