JPS62296591A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS62296591A JPS62296591A JP14172386A JP14172386A JPS62296591A JP S62296591 A JPS62296591 A JP S62296591A JP 14172386 A JP14172386 A JP 14172386A JP 14172386 A JP14172386 A JP 14172386A JP S62296591 A JPS62296591 A JP S62296591A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semi
- insulating
- clad section
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims description 15
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000003486 chemical etching Methods 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000203 mixture Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14172386A JPS62296591A (ja) | 1986-06-17 | 1986-06-17 | 半導体レ−ザ |
| US07/063,056 US4791647A (en) | 1986-06-17 | 1987-06-17 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14172386A JPS62296591A (ja) | 1986-06-17 | 1986-06-17 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62296591A true JPS62296591A (ja) | 1987-12-23 |
| JPH0543309B2 JPH0543309B2 (enrdf_load_stackoverflow) | 1993-07-01 |
Family
ID=15298705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14172386A Granted JPS62296591A (ja) | 1986-06-17 | 1986-06-17 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62296591A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102589A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体発光装置 |
| JPS60145691A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | 半導体レ−ザ |
-
1986
- 1986-06-17 JP JP14172386A patent/JPS62296591A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102589A (ja) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | 半導体発光装置 |
| JPS60145691A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | 半導体レ−ザ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0543309B2 (enrdf_load_stackoverflow) | 1993-07-01 |
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