JPS6228746A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen and an oxygen atoms and heavily dopped with the group IIIa element of the periodic table, an electric charge transfer layer 42 composed of a-Si:H contg. the nitrogen and the oxygen atoms and an electric charge generating layer 43 composed of a-Si:H are laminated on a substrate 41. And the first intermediate layer 47 composed of a-Si:H and dopped with the group IIIa or Va element of the periodic table, the second intermediate layer 46 composed of a-Si:H contg. at least one kind atom selected from the carbon and the nitrogen and the oxygen atoms and the surface reforming layer 45 composed of a-Si:H contg. large amounts of the atom are laminated on the layer 41 to form the photosensitive body 39. By providing the layers 45-47, the mechanical strength of the titled body becomes large. The adhesive property, the anit-fatigue property against a light and the anti-chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obtd, by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

[Detailed description of the invention]

B. Field of Application The present invention relates to photoreceptors, such as electrophotographic photoreceptors. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or Se has AS, T
Photoreceptors doped with e.g., Sb, etc., and photoreceptors in which ZnO or CdS is dispersed in a resin binder are known. However, these photoreceptors have poor environmental pollution, thermal stability,
There are problems with mechanical strength. -4. In recent years, electrophotographic photoreceptors using amorphous silicon (a-5i) as a matrix have been proposed. a-5i has a so-called dangling bond in which the bond of 5i-3i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, we replaced the above defects with hydrogen atoms (
The dangling bonds are filled by bonding H to Si by compensating with H). Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) has a resistivity in the dark of 108 to 10
9 Ω-cm, which is about 1/10,000 times lower than that of amorphous Se. Therefore, a photoreceptor made of a single layer of a-3t:H has problems in that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor. Figure 8 shows a-3i with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating a system photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3,
An optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflecting mirror 6 is provided so as to be movable linearly in the left-right direction of the drawing, and the optical path length between the document scanning point and the photoreceptor is kept constant. The second mirror unit 20 moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 onto the photosensitive drum 9 as an image carrier. The light enters in a slit shape. Around the drum 9, a corona charger 10,
A developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper feed box 15 via each paper feed roller 16, 17 is further processed after the toner image on the drum 9 is transferred. The image is fixed by the fixing unit 19 and then ejected to the tray 35. In the fixing section 19, a fixing operation is performed by passing the developed copy paper between a heating roller 23 having a built-in heater 22 and a pressure roller 24. However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-3iC:H
It is called. ), its manufacturing method and existence are “Ph11.
Mag, Vol. 35'' (1978), etc., and its characteristics include high heat resistance and surface hardness, and a high dark resistivity (10'2~
It is known that the optical energy gap changes over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3i:H has been proposed, for example, in Japanese Patent Application Laid-Open No. 127083/1983. According to this, a-3i:H
The layer is a charge generation (photoconductive) layer, and below this charge generation layer is a
-3iC:H layer is provided, the upper layer a-3i:H obtains photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forming a heterojunction with the a-3i:H layer 5 charges Efforts are being made to improve the potential. However, the dark decay of the a-3i:H layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
: The presence of the H layer causes poor chemical stability, mechanical strength, heat resistance, etc. On the other hand, Japanese Patent Application Laid-Open No. 57-1'7952 (here, a-3
The first a, -3iC:H on the charge generation layer consisting of i:H
The layer is formed as a surface modification layer, and the layer is formed on the back side (support electrode side).
A second a-3iC:HJFf is formed in the second a-3iC:HJFf. In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a gradient layer (a-3i 1-xCx:H) is provided between the charge generation layer and the first and second a-3iC:H layers, and the gradient layer In a-3t: X=0 on the H side, a SiC:
A photoreceptor in which X=0.5 on the H layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so pronounced, especially in continuous repeated use. During continuous tapping and running 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, resulting in white streaks and white spots as image defects. Not sexual enough. Furthermore, light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the use environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. Object of the invention The object of the invention is to provide excellent adhesion between the surface modification layer and the charge generation layer, resistance to mechanical damage, and excellent printing durability.
Stable image quality without image blurring is obtained, there is little optical fatigue during repeated use, the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. 20 Structure of the invention and its effects, that is, the present invention provides an amorphous hydrogenated and/or a charge blocking layer made of fluorinated silicon; an amorphous hydrogenated layer containing nitrogen atoms and oxygen atoms;
or fluorinated silicon doped with a group IIIa or group Va element of the periodic table and made of amorphous hydrogenated and/or fluorinated silicon; at least one of carbon atoms, nitrogen atoms, and oxygen atoms; a second comprising amorphous hydrogenated and/or fluorinated silicon containing
an intermediate layer; and a surface-modified layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms in a larger amount than the second intermediate layer; This relates to a photoreceptor. According to the present invention, the surface-modified layer contains at least one atom of carbon, nitrogen, and oxygen, and the second and first intermediate layers are provided below this layer, so that mechanical damage Strong against (no deterioration of image quality due to white streaks, etc.)
It has excellent rigidity. Furthermore, in the present invention,
Since the first and second intermediate layers are provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. In addition, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent light fatigue resistance during repeated use, has no image fading, and has low residual potential.
It has been confirmed that the electrical and optical characteristics are always stable and are not affected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is Aβ
On a drum-shaped conductive support substrate 41 such as
A group A element (e.g. boron) is heavily doped and C,
a-3i:l((
This is expressed as a-3i(C)(N)(0):H. ), and a P-type charge blocking layer 44 consisting of P-type charge blocking layer 44 consisting of
a-3i:H (a-3
It is expressed as i (Co) 2H. ), a charge generation layer 43 (without impurity doping or made intrinsic) consisting of a-8i:)l, and Pl heavily doped with a group IIIa or group Va element of the periodic table.
Or, the first intermediate eyebrow 47 made of N-type amorphous hydrogenated silicon is doped with an element of Group IIIa or Group Va of the periodic table to be P-type or N-type or intrinsic (or without impurity doping) and N,C and at least 1 of 0
Amorphous hydrogenated silicon containing a-
3i(C)(N)(0):H. ), and the group IIIa or Va group of the periodic table is doped to make it P type or N type or intrinsic (or not doped) and a-3i (C) (N) ( 0
):H has a laminated structure. The charge generation layer 43 has a ratio of resistivity ρD in the dark to resistivity ρL during light irradiation that is sufficiently large as an electrophotographic photoreceptor, and has good photosensitivity (particularly to light in the visible and infrared regions). When the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gear (
Since there is an almost linear relationship with E g, apt ),
It can be defined by replacing the carbon atom content with the optical energy gap. In addition, if the carbon atom content of a-S i C: H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in the charging potential retention ability can be obtained as shown by curve a in Fig. 3. . That is, as shown by curve a in Figure 3, when a-8iC:H with a carbon atom content of 30 to 90% is used, its specific resistance changes according to the carbon content, and is 10'2 Ω-cm.
That's all. The above tendency is that a-3iN containing N or O instead of carbon
The same applies to :H, a-3iO:H. The above layer 45 is essential for modifying the surface of the photoreceptor and making the a-3i photoreceptor practically superior. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time.・Also, since the layer 45 has a high surface hardness, it is difficult to develop, transfer,
It has abrasion resistance in processes such as cleaning, and also has good heat resistance, so it can be used in processes that apply heat such as adhesive transfer. In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si+C=100at
omic% (hereinafter, atomic% is simply expressed as %)
When 1%≦(C)590%, furthermore 10%≦(C
) 570% is desirable. Due to this C content, the above-mentioned resistivity becomes the desired value, and the optical energy gap becomes approximately 2.5 eV, which is 2 or more, and the irradiated light is a -3i: It becomes easier to reach the HFf (charge generation layer) 43. However, if the C content is less than 1%, disadvantages such as mechanical damage occur, and the resistivity tends to fall below the desired value.
In addition, part of the light is absorbed by the surface layer 45, which tends to reduce the photosensitivity of the photoreceptor. Furthermore, if the C content exceeds 90%, the amount of carbon in the layer increases, and the semiconductor properties are likely to be lost. When forming an a-3tC:H film by a glow discharge method, the deposition rate tends to decrease, so the C content is preferably 90% or less.Similarly, in the case of the layer 45 containing nitrogen or oxygen , 1%≦
(N) 590% (furthermore 10%≦[N3570%) is good, 0%<[03570% (furthermore 5%≦[03530
%) is good. In order to improve the charging ability, the surface modified layer 45 may have a high resistance. For this purpose, the surface modified layer may be made intrinsic. In positively or negatively charged use, in order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to minimize the residual potential, the surface-modified layer may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsicization: B2H6/SiH42~50 volume itppm P type: BzH6/SiH450~1000 volume ttppm N type: PH3/SiH41~1000 volume ppm
Layer 45 is a-3iCO1a-3iN, a-3iO1as
It may be made of i02 etc., and the film thickness should be 400≦L.
It is also important to select the film thickness within the range of ≦5,000 people (especially 400 people≦t≦2,000 people. In other words, if the film thickness exceeds 5,000 people, the residual potential VR will be too high and the photosensitivity will decrease. Also occurs, a-5
It is easy to lose the good characteristics as a t-type photoreceptor. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. Regarding the second intermediate layer 46, in order to reduce the residual potential,
The intermediate layer may be of P or N type to enable charge injection from the charge generation layer. The doping amount for controlling the conductivity type may be the same as that for the surface modification layer. Further, the content of C, N, and 0 is made smaller than that of the layer 45. That is, O<(C
)510%, 0<(N)510%, and O<(0)≦5%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above is likely to occur, and if it is less than 50 people, the effect as an intermediate layer will be poor. Preferably, the thickness is 100 Å or more and 1000 Å or less. The first intermediate layer 47 is provided to improve sensitivity, reduce residual potential, improve the adhesion of the surface modification layer, and the intermediate layer 46, and stabilize the image. The intermediate layer 47 needs to be of P or N type in order to improve the above characteristics. The amount of impurity doping is (P
H3: l/(S iH+)=1~1000 (preferably 10~500'') Capacity pp+m, (BzHe)
/ (SiH+) = 10 to 1000 (, preferably 5
0-500) Capacity ppm may be used. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above is likely to occur, and if it is less than 50 people, the effect as an intermediate layer will be poor. Regarding the charge generation layer 43, in order to improve the charging ability, the charge generation layer may be made to have a high resistance. For this purpose, the charge generation layer may be made intrinsic. For this purpose, it is preferable that B 2 H6/S i H4 = 1 to 20 ppm by volume. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is better to set it to m. If the thickness of the charge generation layer 43 is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. Regarding charge transport Jif42, it is necessary to make it intrinsic in order to optimize charging ability and sensitivity. The doping amount for intrinsic conversion is (B2H6)/(S iH+)=1 to 2
000 capacitance ppm is optimal. However, since the above value depends on the N concentration, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 μm. In addition, the composition of the charge transport layer is preferably 1%<[N3530%, preferably 10%≦(N)530%, and 0%<[0
3510%, preferably 0% <[0151%. In addition, the charge blocking layer 44 sufficiently prevents the injection of electrons from the substrate 41, and in order to improve sensitivity and charging ability, the charge blocking layer 44 is doped with an element of Group Ia (for example, boron) of the periodic table by glow discharge decomposition. As a result, it becomes P-type (and even V-type). The doping amount is controlled by the composition of the blocking layer as follows. a-3iC or a-3iCO: P type (P) B 2 Hs / Si H4 = 20-5000 capacity ppIIIa-3iN or a-3iNO: P type (P+) i B 2 Ha / Si H4 = 1000
~5000 capacitance ppm blocking layer is Si○, S
Compounds such as i 02 may also be used. Further, the thickness of the blocking layer 44 is preferably 500 μm to 2 μm. If it is less than 500, the blocking effect will be weak, and if it exceeds 2 μm, the charge transport ability will tend to deteriorate. The composition of the blocking WI 44 is preferably as follows. That is, 1% <[03590%, preferably 10%≦CC) 570%, and 1% <[N3590
%, preferably 10%≦(N)570%, 0%≦[
0〕≦70%, preferably O%≦

It is preferable that [0]≦30%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification layer 45, blocking layer 44, and charge transport layer 42. In addition, as impurities for controlling the conductivity type, in addition to boron, Am, Ga, In5T1, etc., which are listed in periodic table II
Group Ia elements can be used. In addition to phosphorus, elements of Group Va of the periodic table, such as As and Sb, can be used for N-type formation. Next, a method for manufacturing the above-mentioned photoreceptor (eg, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of SiH4 or a gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CH4, and 64 is a supply source of N2.
65 is a supply source of oxygen compound gas such as 02, 66 is a carrier gas supply source such as Ar,
67 is an impurity gas (for example, B2H6) supply source, and 68 is each flow rate needle. In this glow discharge device, first the support, for example! After cleaning the surface of the substrate 41, it is placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is 10''''.
The pressure is adjusted to 6 Torr, and the substrate 41 is evacuated.
at a predetermined temperature, especially 100 to 350°C (preferably 150°C)
φ to be heated and maintained at ~300℃). Next, using a high-purity inert gas as a carrier gas, SiH4 or a gaseous silicon compound, CH4, N2.02, etc. are appropriately introduced into the vacuum chamber 52, and the high-frequency power source 56 is used under a reaction pressure of, for example, 0.01 to 10 Torr. High frequency voltage (e.g. 13.56 M
Hz) is applied. As a result, each of the above-mentioned reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and the P+ type a
-3iCO:H, i-type 3iNO:Hs a-3t:H,
p+ or N-ua-s i: Hla-3iCO:H,
a-3iCO:H in the above layers 44.42.43.47.
46.45 on the substrate (i.e., e.g. the first
(corresponding to the example in the figure). In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming each layer of the above a-3t photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of SiF4 or the like instead of the above-mentioned H or in combination with H, and aS t :F %a-3i :H:F,
a-3iN:F, a-3iN:H:F, a-3iC:F
, , a-SiC:H:F. In this case, the concentration of feces is preferably 0.5° to 10%. Note that the above manufacturing method is based on the glow discharge decomposition method, but other methods include sputtering method, ion blating method, and method of evaporating Sj while introducing activated or ionized hydrogen with a hydrogen discharge tube. (In particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) filed by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, after cleaning the surface of a support, for example, a drum-shaped A1 substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 shown in FIG. Torr and exhaust the air, and keep the substrate 41 at a predetermined temperature, particularly 100 to 350°C (preferably 15°C).
Heat and maintain at a temperature of 0 to 300°C. Next, high purity Ar
A gas was introduced as a carrier gas, and high frequency power with a frequency of 13.56 MHz was applied under a back pressure of 0.5 Torr to perform preliminary discharge for 10 minutes. Then, S i
A reaction gas consisting of H4 and B2H is introduced, and the flow rate ratio L
: 1 : l : (1,5X10-3) of (Ar
By glow discharge decomposition of the mixed gas (S i H4+ CH4 or N2+B2H6), the bi-type a-3iCO:H layer 44 and a-8iN
O:H charge transport layer (however, B2H6/S iH+=5
00% by volume, (N) = 12%, (0) = 1000pp
m (for S i)) 42 and 6prn/hr
The films were sequentially formed to a predetermined thickness at a deposition rate of . Continue, B2
Stop supplying H6 and CH4, decompose SiH+ by discharge,
An a-3i:H layer 43 having a thickness of 5 μm was formed. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of impurity gas, and an intermediate layer 47 with a changed film thickness is formed, and further a-3i
A CO:H or a-3iNO:H intermediate layer 46 and a surface protective layer 45 were further provided to complete the electrophotographic photoreceptor. As a comparative example, a photoreceptor without the intermediate layer 47 was created. The structure of the photoreceptor thus produced was summarized as follows. (1) 1 surface modified layer: a-3iNO:H or a-3iC
O:H (2), intermediate layer: doping amount, film thickness change (see Figure 5) (
3), a-3i: H charge generation N: film thickness = 5 μm
(4), a-3iNo: H charge transport layer: film thickness =
16 μm N content = 11% 0 content = 0.2% With di-B dope for positive charging (5), a-5iCO:H or a-3iNO:H charge blocking layer: Film thickness = 1 μm Carbon content = 11% For positive charging: B-doped (6); Support: Al cylinder (mirror polished finish).Next, various tests were conducted using each of the above-mentioned photoreceptors as follows. ■Yu or Earth 5th degree As shown in Figure 6, 0,
A load W is applied to the 3R diamond needle 70, and the photoreceptor is moved by the motor 71.
Rotate it with and scratch it. Next, the electrophotographic copying machine U-B
An image is produced using a modified machine ix1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which a white streak appears on the image. ■The photoreceptor was allowed to acclimatize in a modified electrophotographic copying machine U-Bix4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with an image current temperature of 33°C and a relative humidity of 80%, and then the developer, paper, After 1000 copies were made without contact with the blade, an image was produced, and the degree of image blurring was determined based on the following criteria. ◎: The image flow is perfect, and the reproducibility of 5.5-point letters and thin lines is good. ○: The 5.5-point letters are slightly thick. △: The 5.5-point letters are blurred and difficult to read. Difficult.
400 by measuring the potential using a modified Bix 2500 machine.
The surface potential of the photoreceptor that remains even after being irradiated with 301 ux-sec of static eliminating light having a peak at nm.・Surface immediately before development measured with a 360SX type electrometer (manufactured by Toresok Co., Ltd.) using a modified V U-B ix 2500 machine (manufactured by Konishiroku Photo Industry), a photoreceptor inflow current of 200 μA, and no exposure. potential., half J-EV (1ux°sec) Using the above device, the long wavelength component of 620 nm or more of the image exposure wavelength was sharply cut using a dichroic mirror (Koshinko Co., Ltd.), and the surface potential was increased from 500 to 250 μm.
The amount of exposure required to reduce the amount by half to V. (The exposure amount was measured using a 550-1 light meter (manufactured by EGandG)) The results are summarized in FIG. 7. From these results, it can be seen that if a photoreceptor is produced based on the present invention, a photoreceptor excellent in each performance for electrophotography can be obtained.

[Brief explanation of the drawing]

1 to 7 show examples of the present invention, in which FIG. 1 is a cross-sectional view of an a-Si photoreceptor, FIG. 2 is a graph showing the optical energy gap of a-3iC, Figure 3 is a graph showing the specific resistance of a-5iC, Figure 4 is a schematic cross-sectional view of the glow discharge device, Figure 5 is a table showing the layer structure of each photoreceptor, and Figure 6 is a schematic of the scratch strength tester. 7 are tables showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39...a-3i type photoreceptor 41...
...Support (substrate) 42 ...Charge transport layer 43 ...Charge generation layer 44 ...Charge blocking layer 45 ...
......Surface modified layer 46.47......Intermediate layer.

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon heavily doped with a Group IIIa element of the periodic table and containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; nitrogen atoms and oxygen atoms; a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon containing; a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; doped with a group IIIa or group Va element of the periodic table and an amorphous a first intermediate layer made of hydrogenated and/or fluorinated silicon; a second intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; A photoreceptor comprising a surface-modified layer made of amorphous hydrogenated and/or fluorinated silicon containing a larger amount of at least one of carbon atoms, nitrogen atoms, and oxygen atoms than the second intermediate layer.