JPS6228749A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen, and an oxygen atoms, and heavily dopped with the group IIIa element of the periodic table, an electric charge transfer layer 42 composed of a-Si:H contg. the carbon atom and an electric charge generating layer 43 composed of a-Si:H are laminated on a substrate 41. And the first intermediate layer 47 composed of a-Si:H and dopped with the group IIIa or Va element of the periodic table, the second intermediate layer 46 composed of a-Si:H contg. at least one kind atom selected from the carbon, the nitrogen and the oxygen atoms and the surface reforming layer 45 composed of Si:H contg. large amounts of the atom are laminated on the substrate 41 to form the photosensitive body 49. By providing the layers 45-47, the mechanical strength of the titled body becomes large. The adhesive property, the anit-fatigue property against a light and the anti- chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obd. by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Application of Santo The present invention relates to a photoreceptor, such as an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or Se has A S
Photoreceptor doped with % T e % S b etc., ZnO
Photoreceptors in which CdS and CdS are dispersed in a resin binder are known. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength. On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as a matrix have been proposed in recent years. a-3i has a so-called dangling bond in which the bond of Si-3i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, the dangling bonds are filled by compensating the defects with hydrogen atoms (H) and bonding H to Si. Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) has a resistivity in the dark of 108 to 10
It is approximately 1/10,000 times lower than amorphous Se. Therefore, a photoreceptor made of pebbles of a-8i;14 has the problem that the surface potential I11#&decay rate is large and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor. Figure 8 shows a-3i with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating a system photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are arranged at the top of the cabinet 1-1. Below the document table 3, an optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflection mirror 6 is provided so as to be movable in a straight line in the left and right direction of the drawing. A second mirror unit 20 for making the optical path length constant moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 and is reflected as an image carrier. The light is incident on the photosensitive drum 9 in the form of a slit. A corona charger 10 is installed around the drum 9.
, a developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper feed box 15 via each paper feed roller 16, 17 is transferred to the drum 9.
After the toner image is transferred, it is further fixed in the fixing section 19, and then the paper is discharged to the tray 35. In the fixing section 19, a fixing operation is performed by passing the developed copy paper between a heating roller 23 having a built-in heater 22 and a pressure roller 24. However, photoreceptors with a-5t:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter referred to as a-S i
C: Referred to as H. ), its manufacturing method and existence are “P”
h11. Mag, Vol. 35” (1978)
It is described in Optical energy gap is 1.6-2.8eV
It is known that it varies over a range of . however,
There is a drawback that long wavelength sensitivity becomes poor because the band gap widens due to the inclusion of carbon. Such an electrophotographic photoreceptor combining a-S i C:H and a-3i:H is disclosed in, for example, JP-A-55-12708.
This is proposed in Publication No. 3. According to this, a-
3t:H eyebrows are used as a charge generation (photoconductive) layer, a-S i C: 8 layers are provided on this charge generation layer, and the upper layer a-3
i:H provides photosensitivity in a wide wavelength range, and a-3i
The charging potential is improved by the lower layer a-3iC:H forming a heterojunction with :Hi. However, a-
3i: The dark decay of the 8 layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
The presence of a-3i:HFi on the surface causes poor chemical stability, mechanical strength, heat resistance, etc. On the other hand, JP-A-57-17952 discloses a-3i:
A first a-3iC:8 layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-3iC:8 layer is formed on the back surface (electroplating side of the support).
a-SiC: 8 layers are formed. In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a slope 5 (a-3i 1-xCx: H) is provided between the charge generation layer and the first and second aSiC: HIBi, and in this slope layer, a-3i: Set X=0 on the H side, a
-3iC: A photoreceptor in which X=0.5 on the H layer side is known. However, when the present inventor conducted an inspection of the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer was not so pronounced, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the aSiCm on the surface is mechanically damaged after about 70,000 to 80,000 times, and white streaks and white spots are caused by this as image defects, so the rigidity resistance is sufficient. isn't it. Moreover,
Light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the usage environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. C1 Object of the invention The object of the invention is to provide excellent adhesion between the surface modification layer and the charge generation layer, resistance to mechanical damage, and excellent printing durability.
Stable image quality with no image blurring is obtained, there is little optical fatigue during repeated use (and the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. D9 The constitution of the invention and its effects, that is, the present invention provides an amorphous hydrogenated and/or A charge blocking layer made of fluorinated silicon; A charge generation layer made of acerated silicon containing carbon atoms; A charge transport layer made of Group IIIa of the periodic table or fluorinated silicon; Amorphous hydrogenated and/or fluorinated silicon a first intermediate layer consisting of; a second intermediate layer consisting of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; carbon atoms, nitrogen atoms, and oxygen atoms; The present invention relates to a photoreceptor in which surface-modified layers made of amorphous hydrogenated and/or non-hydrogenated silicon containing at least one of the above in a larger amount than the second intermediate layer are sequentially laminated. According to the present invention, the surface-modified layer contains at least one atom of carbon, nitrogen, and oxygen, and the second and first intermediate layers are provided below this layer, so that mechanical damage There is no deterioration in image quality due to white streaks, etc.
It has excellent rigidity. Furthermore, in the present invention,
Since the first and second intermediate layers are provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. In addition, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent light fatigue resistance during repeated use, has no image fading, and has low residual potential.
It has been confirmed that the electrical and optical characteristics are always stable and are not affected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is A!
on a drum-shaped conductive support substrate 41 such as a-3t:H (which is heavily doped with an element of Group Ma of the periodic table (e.g., boron) and containing at least one of C, N, and 0 (a-Si( C) (N) (○): P consisting of H
The f-type heavy charge blocking layer 44 is made of a-3i:H containing C (hereinafter referred to as a-3iC:H), which is light-doped with an element of Group 1IIa of the periodic table (for example, boron) and made into an intrinsic carbon. a charge transport layer 42 made of a-3i:H (no impurity doping or made intrinsic) 43; a first intermediate layer 47 made of amorphous hydrogenated silicon;
[Amorphous hydrogenated silicon doped with Group A or Group Va elements to make it P-type, N-type, or intrinsic (or without impurity doping) and containing at least one of N, C, and O (this is a -3i (C) (N
) (0) Represented as H. ), a second intermediate layer 46 consisting of
P is doped with a group IIIa or Va element of the periodic table.
It has a structure in which a surface modification layer 45 of a-3i (C)(N)(0):H which is made of type, N-type, or intrinsic (or not doped) is laminated. The charge generation layer 43 has a ratio of resistivity ρD in the dark to resistivity ρL during light irradiation that is sufficiently large for use as an electrophotographic photoreceptor, and has good photosensitivity (particularly to light in the visible and infrared regions). In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is a nearly linear relationship with Eg, opt), the carbon atom content can be defined by replacing it with the optical energy gap. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in charging potential holding ability can be obtained as shown by curve a in FIG. 3. That is, as shown by curve a in FIG. 3, when the carbon atom content is 30
When ~90% a-3iC:H is used, its resistivity varies according to the carbon content and is greater than or equal to 1012 Ω-mark. The above tendency is that a-3iN containing N or 0 instead of carbon
The same applies to :HXa-3iO:H. The eyebrows 45 mentioned above are indispensable for modifying the surface of the photoreceptor and making the a-3i photoreceptor practically superior. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. Furthermore, since the layer 45 has a high surface hardness, it is resistant to abrasion during processes such as development, transfer, and cleaning.Furthermore, it has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. can. In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si+C=100at
omic% (hereinafter, atomic% is simply expressed as %)
When 1%≦(C)590%, furthermore 10%≦(C
) 570% is desirable. Due to this C content, the above-mentioned resistivity becomes the desired value, and the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is a-3i due to the so-called optically transparent window effect for visible and infrared light. :) (It becomes easier to reach the layer (charge generation layer) 43. However, if the C content is less than 1%, defects such as mechanical damage will occur, and the resistivity will tend to fall below the desired value, and The light is absorbed by the surface layer 45, and the photosensitivity of the photoreceptor is likely to decrease.Furthermore, if the C content exceeds 90%, the amount of carbon in the layer increases, and the semiconductor properties are likely to be lost.
-3iC: Since the deposition rate when forming the H film by the glow discharge method tends to decrease, the C content is preferably 90% or less. Similarly, for layer 45 containing nitrogen or oxygen, 1%:
i; (N) 590% (furthermore 10%≦[N3570
%) is good, 0% [0]≦70% (even 5%≦(0
)530%) is good. In order to improve the charging ability, the surface modified layer 45 may have a high resistance. For this purpose, the surface modified layer may be made intrinsic. In positively or negatively charged use, in order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to minimize the residual potential, the surface-modified layer may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsicization: B 2 Hs/S i H 42-50 capacity p
pmP type: Bz H6/S i I-1450~
1010009fflpp type: PH3/SiH41~1
OOO capacitance ppm Also, layer 45 is a-3iCO1a-3
iN. a-3iO1a-8i○2, etc., and the film thickness is within the range of 400≦t≦5000 (especially 400≦t≦5000).
It is also important to select people≦t≦2000 people. If the film thickness exceeds 5,000, the residual potential Vt() becomes too high and the photosensitivity decreases, causing a-
The good characteristics of a 5i photoreceptor are likely to be lost. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. Regarding the second intermediate 1i 46, in order to reduce the residual potential, the Lunoni intermediate layer may be of P or N type to enable charge injection from the charge generation layer. The doping amount of the conductivity type control layer may be the same as that of the surface modification layer. Also, C, N,
The content of ○ is made smaller than that of layer 45. That is, O
<(C)610%, 0<CN)610%, O<(0)5
It is best to set it at 5%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Preferably, the thickness is 100 Å or more and 1000 Å or less. The first intermediate eyebrow 47 is provided to improve sensitivity, reduce residual potential, improve adhesion of the surface modification layer and intermediate layer 46, and stabilize the image. The intermediate layer 47 needs to be of P or N type in order to improve the above characteristics. The amount of impurity doping is (P
H3) / (S iH+) = 1 to 1000 (preferably 10 to 500) Capacity ppm, CB z H6) /
(S i H4) -10-1000 (preferably 50
~500) Capacity ppm. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above is likely to occur, and if it is less than 50 people, the effect as an intermediate layer will be poor. Regarding the charge generation layer 43, in order to improve the charging ability, the charge generation layer may be made to have a high resistance. For this purpose, the charge generation layer may be made intrinsic. For this purpose, it is preferable to set BzH6/5iH4=1 to 20 ppm by volume. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is better to set it to m. If the thickness of the charge generation layer 43 is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 may be made intrinsic in order to optimize charging ability and sensitivity. The doping amount for intrinsic conversion is (B 21 is)/(S i H4) = 2 to 20
#Volumefflppm is optimal. However, since the above value depends on the C concentration, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 μm. In addition, the composition of the charge transport layer is preferably 1% < 035 30%, preferably 10%≦(C) 530%, and 0% <
O] 610%, preferably 0% [0] 51%. Further, in order to sufficiently prevent electron injection from the substrate 41 and improve sensitivity and charging ability, the charge blocking layer 44 is doped with an element of Group Ma of the periodic table (for example, boron) by glow discharge decomposition. , to become P type (and even P+ type). The doping amount is controlled by the composition of the blocking layer as follows. a-3iC or a-3iCO: P type (Pf); B 2 H6/S i H+ = 20 to 5000 capacity ppma-3iN or a-3iNO: P type (P+); B 2 Hs / Si H4 = 2000 to 5000
The capacitive ppm blocking layer may be a compound such as SiO, SiO2. In addition, the film thickness of Flocking l1i44 is 500 to 2μ.
m is good. If it is less than 500, the pro-noking effect will be weak, and if it exceeds 2 μm, the charge transport ability will tend to deteriorate. The composition of the blocking layer 44 is preferably as follows. That is, 1% <[N3590%, preferably 10%≦(C)570%,
, preferably 10%<[N1570%, 0%≦(0
)570%, preferably O%≦(0)530%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification layer 45, blocking layer 44, and charge transport layer 42. Also, as impurities for controlling the conductivity type, in addition to boron, A#, Ga, In, Tjl! Periodic table I
Group IIa elements can be used. In addition to phosphorus, elements of Group Va of the periodic table, such as A5 and sb, can be used for N-type conversion. Next, a method for manufacturing the above-mentioned photoreceptor (eg, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is vertically rotatably placed in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high-frequency electrode 57 with a gas outlet 53 is arranged around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high-frequency power source 56. In addition, 62 in the figure is a supply source of SiH+ or gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CH4, and 64 is N2
65 is a supply source of oxygen compound gas such as 02, 66 is a carrier gas supply source such as Ar,
67 is an impurity gas (for example, B2H8) supply source, and 68 is each flow rate needle. In this glow discharge device, first, the surface of the support, for example, the Aj2 substrate 41, is cleaned and then placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is set to 10=
Torr and exhaust the substrate 41.
at a predetermined temperature, especially 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, using a high-purity inert gas as a carrier gas, Si H4 or a gaseous silicon compound, CH4, N2.02, etc.
A high frequency voltage (for example, 13.56
Mllz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electric bridge 57 and the substrate 41, and P
Type a-3iC:H, i-type a-3iC:H, a-3i:
H, P or N type a-3i: Hla-3iC○: H, a-
3iC:H in the above layers 44.42.43.47.46.
45 (i.e., eg, corresponding to the example of FIG. 1). In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming each layer of the above a-3i photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of 3iF4 or the like instead of or in combination with H to form a-3i:F. a-8i: H: F, a-3iN: F, a-
3iN:I(:F, a-3iC:F, a-3iC:H:
It can also be set to F. In this case, the feces placement is 0.5~
10% is desirable. The above manufacturing method is based on the glow discharge decomposition method, but there are also methods such as sputtering method, ion blating method, and pulverizing Si while introducing activated or ionized hydrogen in a hydrogen discharge tube. Method (in particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, after cleaning the surface of a support, for example, a drum-shaped AN substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 shown in FIG.
The pressure is adjusted to 6 Torr, and the substrate 41 is evacuated.
at a predetermined temperature, especially 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, high purity Ar
A gas was introduced as a carrier gas, and a high frequency power of 13.56 MtlzO was applied under a back pressure of 0.5 Torr to perform a preliminary discharge for 10 minutes. Then, SiH
4 and B2H6 was introduced, and the flow rate ratio was 1:
1 : 1 : (Ar+ of (1,5xlO-3)
By glow discharge decomposition of SiH4 + CH4 or N 2 + B 2 H6) mixed gas, P-type a-3iC:H layer 44 and a-SiC, which have a charge blocking function
:H charge transport layer 42 was sequentially formed to a predetermined thickness at a deposition rate of 6 pm/hr. Continuing, B2H6 and CH
4 was stopped, siH,+ was decomposed by discharge, and the thickness was 5 μm.
a-3i: 8 layers 43 were formed. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of the impurity gas, an intermediate layer 47.46 with a changed film thickness is formed, and further B 2 H6
/5iH4=100 volume ffippm as a-3iCO
:H or a-3iNO:H surface protection layer 45 is further provided,
Completed an electrophotographic photoreceptor. As an example of ratio axis, middle layer 4
A photoreceptor without 7 was created. The structure of the photoreceptor thus produced was summarized as follows. (1) 0 surface modification layer: a-3iNO:H or a-3iC
○: H (2), intermediate layer: dove amount, film thickness change (see Figure 5) (
3), a-3i: H charge generation layer: film FE-5μ
m(41, a-3ic: H charge transport layer: film thickness = 16
．． crmC content = 11% For positive charging: B doped (51, a-3iC:H or a-3iN:H charge blocking layer: film thickness = 1 μm carbon content = 11% (6), support: A1 cylinder (Mirror polished finish) Next, various tests were carried out using each of the above photoreceptors as follows. ■As shown in Figure 6 of Nikuma 1 Samo, a photoreceptor was applied perpendicularly to the 39th surface. 0,
A load W is applied to the 3R diamond needle 70, and the photoreceptor is moved by the motor 71.
Rotate it with and scratch it. Next, the electrophotographic copying machine U-B
An image is produced using a modified machine ix1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which a white streak appears on the image. The photoreceptor was allowed to acclimatize for 24 hours in a modified electrophotographic copying machine U-Bix 4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) under an environment with a human-like temperature of 33°C and relative humidity of 80%, and then the developer, paper, After 1000 copies were made without contact with the blade, an image was produced, and the degree of image blurring was determined based on the following criteria. ◎There is no image blurring at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. ○: 5.5 point alphabetic characters are slightly thicker. △: 5.5 point letters are crushed and difficult to read. X: 5.5 points of unreadable letters.・Potential measurement using a modified U-B ix 2500,
The surface potential of the photoreceptor that remains even after being irradiated with 301 ux-sec of static eliminating light having a peak at 400 nm. Using a modified VoΩυ-U-Bix 2500 machine (manufactured by Konishi Roku Photo Industry ■), measurement was performed with a 360SX type electrometer (manufactured by Tore-7ri Co., Ltd.) under the conditions of a photoconductor inflow current of 200 μA and no exposure. Surface potential just before development. ""-,-E'/ (1ux-sec) Using the above device, the long wavelength component of 620 nm or more of the image exposure wavelength was sharply cut using a guichroic mirror (manufactured by Genshui Kogaku Co., Ltd.), and the surface potential was reduced to 500 nm. The amount of exposure required to reduce the amount of light by half from 250 cm to 250 cm. (The amount of exposure was measured using a 550-1 type photometer (manufactured by EGandG)) The results are summarized in Figure 7. From these results, the present invention It can be seen that if a photoreceptor is prepared based on the above, a photoreceptor with excellent performance for electrophotography can be obtained.

[Brief explanation of the drawing]

1 to 7 show embodiments of the present invention. FIG. 1 is a sectional view of an a-3i photoreceptor, and FIG. 2 is an a-3
Graph showing the optical energy gap of iC, FIG. 3 is a graph showing a-3iCO resistivity, FIG. 4 is a schematic cross-sectional view of the glow discharge device, FIG. 5 is a table showing the layer structure of each photoreceptor, FIG. 6 is a schematic diagram of a scratch strength tester, and FIG. 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39...a-3i type photoreceptor 41...
...Support (substrate) 42 ...Charge transport layer 43 ...Charge generation layer 44 ...Charge blocking layer 45 ...
......Surface modified layer 46.47......Intermediate layer.

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon heavily doped with a Group IIIa element of the periodic table and containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; A charge transport layer made of amorphous hydrogenated and/or fluorinated silicon; A charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; Doped with a group IIIa or Va element of the periodic table and made of amorphous hydrogenated and/or fluorinated silicon; and/or a first intermediate layer made of fluorinated silicon; a second intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; carbon atoms, A photoconductor comprising a surface-modified layer made of amorphous hydrogenated and/or fluorinated silicon containing a larger amount of at least one of nitrogen atoms and oxygen atoms than the second intermediate layer.