JPS6228748A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen, and an oxygen atoms, and heavily dopped with the group IIIa element of the periodic table, an electric charge transfer layer 42 composed of a-Si:H contg. the nitrogen and the oxygen atoms and an electric charge generating layer 43 composed of a-Si:H aer laminated on a substrate 41. And the first intermediate layer 47 composed of a-Si:H and dopped with the group IIIa or Va element of the periodic table, he second intermediate layer 46 composed of a-Si:H contg. one kind atom selected from the carbon, the nitrogen and the oxygen atoms and the surface reforming layer 45 composed of a-Si:H contg. large amounts of the atom are laminated on the substrate 41 to form the photosensitive body 39. By providing the layers 45-47, the mechanical strength of the titled body becomes large. The adhesive property, the anit-fatigue property against a light and the anti- chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obtd. by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Application of Santo The present invention relates to a photoreceptor, such as an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or Se, As,
Photoreceptors doped with Te, Sb, etc., photoreceptors in which ZnO or CdS is dispersed in a resin binder, and the like are known. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength. On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as an i-form have been proposed in recent years. a-3i has a so-called dangling bond in which the bond of 5i-3t is broken, and many localized levels exist within the energy gap due to this defect. For this reason, popping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, the dangling bonds are filled by compensating the defects with hydrogen atoms (I4) and bonding I1 to Si. Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) has a resistivity in the dark of 10” to 10
9Ω-■, which is about 1 compared to amorphous Se.
It's even lower than 1/10,000. Therefore, a photoreceptor made of a single layer of a-3i nide (3) has problems in that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity increases (decreases), so it has extremely excellent characteristics as a photosensitive layer of a photoreceptor. -3i:) (a-3 with base material
An electrophotographic copying machine incorporating an i-type photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3, an optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflecting mirror 6 is provided so as to be movable in a straight line in the left and right direction of the drawing. A second mirror unit 20 for making the optical path length constant with respect to the first
The mirror unit moves in accordance with the speed of the mirror unit, and the reflected light from the document table 3 side is incident on the photosensitive drum S as an image carrier through the lens 21 and the reflection mirror 8 in a slit shape. . A corona charger 1 is installed around the drum 9.
0, a developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper fed from the paper feed box 15 through the paper feed rollers 16 and 17 is used to remove the toner image on the drum 9. After the transfer, the image is further fixed in the fixing section 19 and then discharged onto the tray 35. In the fixing section 19, a heater 22
A fixing operation is performed by passing the developed copy paper between a heating roller 23 containing a heat roller 23 and a pressure roller 24. However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-3iC:H
My name is Suru. ), its manufacturing method and existence are described in "Ph1l. Mag, Vol. 35" (1978), etc., and its characteristics include high heat resistance and surface hardness,
a-3i: High dark resistivity (10” to 10
It is known that the optical energy gap varies over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3t:H has been proposed, for example, in Japanese Patent Laid-Open No. 127083/1983. According to this, ;l-3i
: The H layer is a charge generation (photoconductive) layer, an a-3iC:H layer is provided below this charge generation layer, and the upper layer a-3t:H provides photosensitivity in a wide wavelength range, and the a-3i The charging potential is improved by the lower layer a-3iC:H forming a heterojunction with the :H layer. However, a-3i:)i
It is not possible to sufficiently prevent the dark decay of the layer, and the charging potential is still insufficient to be practical.
-3t: Chemical stability, mechanical strength, heat resistance, etc. are poor due to the presence of the H layer. On the other hand, JP-A-57-17952 discloses a-3i;
A first a-3iC:H layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-3iC:H layer is formed on the back surface (support electrode side).
a-3iC:H layer is formed. A gradient layer (a-3i, -xCx:H) is provided between the load generation layer and the first and second a-3iC:H layers, and in this gradient layer, X=0 on the a-3t:H side. Toshi, a-3iC
: A photoreceptor in which X=0.5 on the 8th layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface-modified layer 6 was not exhibited to a great extent, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. In addition, light resistance fatigue occurs during repeated use, and image blurring occurs.
The electrical and optical characteristics are not always stable, and the usage environment (temperature,
The influence of humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. C1 Object of the invention The object of the invention is to provide excellent adhesion between the surface modification layer and the charge generation layer, resistance to mechanical damage, and excellent printing durability.
Stable image quality without image blurring is obtained, there is little optical fatigue during repeated use, the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. 20 Structure of the invention and its effects, that is, the present invention provides a charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; and an amorphous hydrogenated and/or fluorinated layer containing an oxygen atom; a first intermediate layer doped with an element of group 1Ia or Va of the periodic table and made of amorphous hydrogenated and/or fluorinated silicon; a carbon atom, a second intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of nitrogen atoms and oxygen atoms; The present invention relates to a photoreceptor in which a surface-modified layer made of amorphous hydrogenated and/or fluorinated silicon containing a larger amount than the layer is sequentially laminated. According to the present invention, the surface-modified layer contains at least one atom of carbon, nitrogen, and oxygen, and the second and first intermediate layers are provided below this layer, so that mechanical damage There is no deterioration in image quality due to white streaks, etc.
Excellent printing durability. Furthermore, in the present invention,
Since the first and second intermediate layers are provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. In addition, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent light fatigue resistance during repeated use, has no image fading, and has low residual potential.
It has been confirmed that the electrical and optical characteristics are always stable and are not affected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is A1
A-3i:H (which is heavily doped with a Group Va element of the periodic table (e.g., phosphorus) and contains at least one of C, N, and O) is placed on a drum-shaped conductive support substrate 41 such as
−3t (C)(N)(0):H. ), an N + type heavy charge blocking layer 44 consisting of a-3t:H (a-3iN
O: Represented as H. ) and a-3.
i: A charge generation layer (without impurity doping or made intrinsic) 43 made of H, and a group Ma or Va group of the periodic table.
The first intermediate layer 47 is made of P type or N type amorphous hydrogenated silicon heavily doped with group elements, and P type or N type or intrinsic (or a-3t(C)(N)(0) containing at least one of N, C, and 0.
): Represented as H. ), and a second intermediate layer 46 doped with an element of Group Ma or Group Va of the periodic table to be P-type or N-type or intrinsic (or not doped) and a-
It has a structure in which a surface modified layer 45 made of 3t(C)(N)(o):H is laminated. The charge generation layer 43 has a ratio of resistivity ρ in the dark to resistivity ρ during light irradiation that is sufficiently large as an electrophotographic photoreceptor, and has good photosensitivity (particularly to light in the visible and infrared regions). In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is a nearly linear relationship with Eg, opt), the carbon atom content can be defined by replacing it with the optical energy gap. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in charging potential holding ability can be obtained as shown by curve a in FIG. 3. That is, as shown by curve a in FIG. 3, when the carbon atom content is 3
When using 0 to 90% a-3tC:I, the resistivity changes according to the carbon content and becomes 1012 Ω-1 or more. 3iN
The same applies to :H, a-3iO:H. The above layer 45 is essential for modifying the surface of the photoreceptor and making the a-3i photoreceptor practically superior. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor whose surface is made of a-Si:H, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. In addition, since the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. . In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing a carbon atom, si+c-to. When atomic% (hereinafter, atomic% is simply expressed as %), 1%≦(C)590%, further 10%
It is desirable that ≦[01570%. Due to this C content, the above-mentioned specific resistance becomes the desired value, and the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is a-3t due to the so-called optically transparent window effect for visible and infrared light. : It becomes easier to reach Hli (charge generation layer) 43. However, if the C content is 1% or less, disadvantages such as mechanical damage occur, and the specific resistance tends to fall below a desired value, and part of the light is absorbed by the surface layer 45, reducing the photosensitivity of the photoreceptor. It becomes easier to do. Furthermore, if the C content exceeds 90%, the carbon content in the layer increases, which tends to cause the semiconductor properties to be lost, and also tends to reduce the deposition rate when forming the a-SiC:H film by the glow discharge method. Therefore, the C content is 90%
The following should be used. Similarly, in the case of the layer 45 containing nitrogen or oxygen, 1%≦[N9590% (furthermore 10%≦
[N) 570%) is good, and 0% ~ [03570% (furthermore, 5%≦[09530%)] is good. In order to improve the charging ability, the surface modified layer 45 may have a high resistance. For this purpose, the surface modified layer may be made intrinsic. In order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to reduce the residual potential when positively or negatively charged, the surface layer 7IN may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsicization: Bz Hb/S i H42~50 Capacity ppm
P type: BZH&/S i H450~1000 volumeffi p
p mN type: P H3/SiH41~1000 volume fflppm Also, the layer 45 is a-5iC○, a-3iN, a-3iO1
It may be made of a-3iO2, etc., and the film thickness is 400 mm.
Within the range of people≦L≦5ooo people (especially 400 people≦t≦20
It is also important to select 00 people. That is, if the film thickness exceeds 5,000 layers, the residual potential □ becomes too high and the photosensitivity decreases, so that the good characteristics as an a-3i photoreceptor are easily lost. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. Regarding the second intermediate layer 46, in order to reduce the residual potential, the intermediate layer must be
Or it may be N type. The doping amount for controlling the conductivity type may be the same as that for the surface modification layer. Further, the content of C, N, and 0 is made smaller than that of the layer 45. That is, O<(C)510%, 0<(N)510%
, 0<(0)≦5%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Preferably, the thickness is 100 Å or more and 1000 Å or less. The first intermediate layer 1ii47 is provided to improve sensitivity, reduce residual potential, improve adhesion of the surface modification layer and intermediate layer 46, and stabilize the image. The intermediate layer 47 needs to be of P or N type in order to improve the above characteristics. The impurity doping amount is (PH33/(S
i H4) = 1 to 1000 (preferably 10 to 5
00) Volume'ijppm, (B2H4) / (S i
H4) = 10-100 (preferably 50-500)
The capacity may be expressed as ppm. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Regarding the charge generation layer 43, in order to improve the charging ability,
The resistance of the charge generation layer may be increased. For this purpose, the charge generation layer may be made intrinsic. For this intrinsicization, B, Ht, / S t H4 = 1-20 volume f
It is preferable to set it to tppm. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is better to set it to m. If the thickness of the charge generation layer 43 is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 may be made intrinsic in order to optimize charging ability and sensitivity. The doping amount for making it intrinsic is C
BZH6)/(S i H4)= 1~2000 volume #
p p m is optimal. However, since the above value depends on the C concentration, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 μm. In addition, the composition of the charge transport layer is 1%<[N]≦30%, preferably 10%≦(N3530% is good, 0%〈[0]≦
10%, preferably 0%. In addition, the charge blocking layer 44 may be made of elements of Group Va of the periodic table (for example, phosphorus), if necessary, to sufficiently prevent hole injection from the substrate 41 and to improve sensitivity and charging ability.
is doped by glow discharge decomposition to make it intrinsic, and further to N-type (
Furthermore, it is preferable to convert it into an N-type. The doping amount is controlled by the composition of the blocking layer as follows. a-3iC or a-3iCO: Intrinsic B2H6/S i H42~20 Capacity p p
mN type (N”) P H3/S i H41~10
00 volume fflppma-3iN or a-3iNO: Intrinsic Bz Hb/S i Ha 1-2
000 volume ffippmN type (N“)P)T3/SiH4
1 to 2000 The blocking layer may be a compound such as SiO or SiO□. Further, the locking layer 44 has a film thickness of 500 μm to 2 μm.
Good. If it is less than 500, the pro-soking effect will be weak, and if it exceeds 2 μm, the charge transport ability will be poor (easily). Regarding the composition of profking N44, it is desirable to have the following composition: 1% 01590%, preferably 10%≦[03570%, 1%<(N)690%
, preferably 10% <[N3570%, 0%≦ [
0] 570%, preferably 0%≦[0]≦30%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range has a surface number of 145, and the same applies to the blocking layer 44 and the charge transport layer 42. In addition, as impurities for controlling the conductivity type, in addition to boron, AI Ga, In, Tff, etc.
Group 1a elements can be used. In addition to phosphorus, elements of Group Va of the periodic table, such as As and Sb, can be used for N-type formation. Next, a method for manufacturing the above-mentioned photoreceptor (for example, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a source of SiH or a gaseous silicon compound, 63 is a source of hydrocarbon gas such as CI4, and 64 is a source of N2.
65 is a supply source of oxygen compound gas such as 02, 66 is a carrier gas supply source such as Ar,
67 is an impurity gas (for example, B, IT, ) supply source, and 68 is each flow meter. In this glow discharge device, first, the surface of the support, for example, the A/substrate 41 is cleaned, and then placed in the vacuum chamber 52, and the gas pressure in the -''L empty chamber 52 is adjusted to 10-6 Torr. The substrate 41 is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C).Next, using a high purity inert gas as a carrier gas, Si
H4 or gaseous silicon compound, CH4, N, , o,
etc. are appropriately introduced into the vacuum chamber 52, for example, 0.01 to 10
A high frequency voltage (for example, 13.56 MHz) is applied by a high frequency power supply 56 under a reaction pressure of Torr. As a result, each of the above-mentioned reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and N'-type a3iCO:H, i-type a-3iN
o: H, a-3i: H, P" or N+ type a-3i:
H,a-3iCO:HSa-3iC:H in the above layer 44
．． 42, 43, 47, 46, 45 on the substrate in succession (ie, corresponding to the example of FIG. In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming the above a-St photoreceptor photoreceptor,
In order to compensate for dangling bonds, it is necessary to use S t Fs instead of the above-mentioned H or in combination with H.
etc., a-5i:F, a-3i:H:F, .
a-5iN:F, a-3iN:H:F, a-3iC:F
It can also be Xa-3iC:H:F. In this case, the fecal content is preferably 0.5 to 10%. The above manufacturing method is based on the glow discharge decomposition method, but there are also sputtering methods, ion blating methods, and methods in which Si is evaporated while introducing activated or ionized hydrogen in a hydrogen discharge tube. (In particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) filed by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, after cleaning the surface of the support, for example, a vertical drum-shaped A2 substrate 41 with a smooth surface, it is placed in a vacuum chamber 52 shown in FIG. −
"Torr" and exhaust the air, and the substrate 4
1 at a predetermined temperature, particularly 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, high purity Ar
A gas was introduced as a carrier gas, and high frequency power with a frequency of 13.56 Mllz was applied under a back pressure of 0.5 Torr to perform a preliminary discharge for 10 minutes. Then, S
i Introduce a reaction gas consisting of H4 and PH3, and set the flow rate ratio to 1.
: 1 : 1 : (A of (1,5Xl0-')
r +3 i H, +CH4 or Nz+PHz) By glow discharge decomposition of the mixed gas, an N+ type a-S t C: H layer 4mj which plays a charge blocking function
and a-3iNO:H charge transport layer 42 were sequentially formed to a predetermined thickness at a deposition rate of 6 μm/hr. Continuing, PHi
The supply of CH4 and CH4 was stopped, and 5tH4 was decomposed by discharge to form an a-3isH layer 43 with a thickness of 5 μm. Subsequently,
Glow discharge decomposition is performed by changing the flow rate ratio of impurity gas, intermediate J'W47 is formed by changing the film thickness, and further a-3i
A CO:H or a-3iNO:H intermediate layer 46 and a surface protective layer 45 were further provided to complete the electrophotographic photoreceptor. Comparative Example The structure of the photoreceptor thus prepared was summarized as follows. (1) 1 surface modified layer: a-3iNO:H or a-3iC
O:H (2), intermediate layer: doping amount, film thickness change (see Figure 5) (
3), a-3i: H charge generation layer: film thickness = 5 μm (
4), a-3fNO: H charge transport layer: film thickness = 16
．． czmN content = 12% 0 content = 0.1% [5), a-3iCO:H or a-3iNO:H charge blocking N: film thickness = o, sμm carbon content = 12
% (6) Support: Al cylinder (mirror polished finish) Next, various tests were conducted using each of the above photoreceptors as follows. ■As shown in Figure 6, the photoconductor 39 is placed perpendicularly on the surface of the photoconductor 720, a load W is applied to the 3R diamond needle 7o, and the photoconductor is moved to the motor 7.
Rotate it with 1 and make a scratch. Next, the electrophotographic copying machine U
- Images are produced using a modified Bix 1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image. ■1 After acclimatizing the photoconductor in a modified electrophotographic copying machine U-Bix 4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with a normal temperature of 33°C and a relative humidity of 80%, the developer and paper ,
After 1000 copies were made without contact with the blade, an image was produced and the degree of image blurring was determined based on the following criteria. ◎: There is no image flow at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. ○: 5.5 point alphabetic characters are slightly thicker. △: 5.5 point letters are crushed and difficult to read. X: 5.5 point English letters are illegible. Ruden Stand ■, + (■) U -B +x Potential measurement using a 2500 modified machine,
Static neutralizing light with a peak at 400 nm 301 ux-sec
The surface potential of the photoreceptor that remains even after irradiation. 1XXI Iri-e! The surface potential immediately before development was measured with a 360 SX type electrometer (manufactured by Trek) using a modified LU-Bix 2500 machine (manufactured by Konishi Roku Photo Industry ■) with a photoconductor inflow current of 200 μA and no exposure. Half-exposure E% (lux-sec”) Using the above device, sharply cut the long wavelength component of 620nra or more of the image exposure wavelength using a guichroic mirror (manufactured by Koshinko Co., Ltd.), and reduce the surface potential from 500μ to 250V. The amount of exposure required to reduce the amount by half. (The amount of exposure is measured using a 550-1 light meter (E
(Measurement made by GandG) The results are summarized in FIG. 7. These results show that if a photoreceptor is produced based on the present invention, a photoreceptor with excellent performance for electrophotography can be obtained.

[Brief Description of the Drawings] Figures 1 to 7 show embodiments of the present invention.
Graph showing the optical energy gap of iC, FIG. 3 is a graph showing a-3iCO resistivity, FIG. 4 is a schematic cross-sectional view of the glow discharge device, FIG. 5 is a table showing the layer structure of each photoreceptor, Figure 6 is a schematic diagram of the scratch strength tester, and Figure 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the reference numerals shown in the drawings, 39--------------a-Si-based photoreceptor 41-1111 --- Support (substrate) 42- −
-・・−・−・−Charge transport layer 43−−−−−−・−
...-Charge generation layer 44...-------1.
Charge blocking layer 45----1...-1----
The surface modified layer 46.47 is an intermediate layer. Agent Patent Attorney Hiroshi Aisaka Figure 1 S9 Figure 2 a-Sh-χCχ:HX Figure 3 Figure 6 Figure 4 Figure 7 Figure 8

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; amorphous hydrogenated and/or fluorinated silicon containing nitrogen atoms and oxygen atoms; a charge transport layer made of hydrogenated and/or fluorinated silicon; a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; doped with a Group IIIa or Va element of the periodic table and made of amorphous hydrogenated and/or fluorinated silicon; a first intermediate layer; a second intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; and a surface-modified layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of the above in a larger amount than the second intermediate layer.