JPS6228757A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen, and an oxygen atoms, and heavily dopped with the group IIIa element of the periodic table, an electric charge transfer layer 42 composed of a-Si:H contg. the carbon atom and an electric charge generating layer 43 composed of a-Si:H are laminated on a substrate 41. And the intermediate layer 46 composed of a-Si:H contg. at least one kind atom selected from the carbon, the nitrogen and the oxygen atoms and dopped with the group IIIa or Va element of the periodic table, and the surface reforming layer 45 composed of a-Si:H contg. large amounts of the atom are laminated on the substrate 41 to form the photosensitive body 39. By providing the layers 45 and 46, the mechanical strength of the titled body becomes large. The adhesive property, the anti-fatigue property against a light and the anti-chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obtd. by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

[Detailed description of the invention]

B. Industrial Application Field The present invention relates to a photoreceptor, for example, an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or Se has As, T
Photoreceptors doped with e.g., Sb, etc., and photoreceptors in which ZnO or CdS is dispersed in a resin binder are known. However, these photoreceptors have poor environmental pollution, thermal stability,
'a) There is a problem in terms of mechanical strength. On the other hand, electrophotographic photoreceptors using amorphous silicon (a-si) as one body have been proposed in recent years. a-3i has a so-called dangling bond in which the bond of 5i-3i is broken, and many localized levels exist within the energy gear knob due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, by compensating for the above defects with hydrogen atoms (H) and bonding H to Si,
Filling of dangling bonds is performed. Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) in the dark is 10I'~1
09 Ω-cm, which is about 1/10,000 times lower than that of amorphous Se. Therefore, a photoreceptor made of a single layer of a-3i:H has problems in that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor. Figure 8 shows a-3i with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating a photosensitive system 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3,
An optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflecting mirror 6 is provided so as to be movable linearly in the left-right direction of the drawing, and the optical path length between the document scanning point and the photoreceptor is kept constant. The second mirror unit 20 moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 onto the photosensitive drum 9 as an image carrier. The light enters in a slit shape. A corona charger 10 is installed around the drum 9.
, a developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper feed box 15 via each paper feed roller 16, 17 is transferred to the drum 9.
After the toner image is transferred, it is further fixed in the fixing section 19, and then the paper is discharged to the tray 35. In the fixing section 19, the developed copy paper is passed between a heating roller 23 containing a heater 22 and a pressure roller 24 to perform a fixing operation. However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter referred to as a-S i
C: Referred to as H. ), its manufacturing method and existence are “P”
h11. Mag, Vol, 35” (1
978), etc., and its characteristics include high heat resistance and surface hardness, high dark resistivity (1012 to 10I3Ω-cm) compared to a-3i:H, and Optical energy gap is 1.6-2
．． It is known that the voltage varies over a range of 8 eV. However, there is a drawback that the long wavelength sensitivity becomes poor because the hand gap widens due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3i:H has been proposed, for example, in Japanese Patent Application Laid-Open No. 127083/1983. According to this, a-Si:H
The layer is a charge generation (photoconductive) layer, and below this charge generation layer is a
-S i C: H layer is provided, the upper layer a-3i:H obtains photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forms a heterojunction with the a-3i:)1 layer. This aims to improve the charging potential. However, a −S
i: r-(The dark decay of the layer cannot be sufficiently prevented, the charging potential is still insufficient and it is not practical, and the a-3i:H layer is present on the surface. This results in poor chemical stability, mechanical strength, heat resistance, etc. On the other hand, JP-A-57-17952 discloses a-3i:
) a first a-S i C on the charge generation layer consisting of i:
H layer is formed as an intermediate layer, and on the back side (support electrode side)
A second a-3iC:If layer is formed thereon. In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a gradient layer (a-3i+-x C,:H) is provided between the charge generation layer and the first and second a-5iC:H layers, and the gradient layer In the layer, a-3i:H side is set to X-0, and a-3iC:H
A photoreceptor in which X=0.5 on the layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the intermediate layer is not so great, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. Moreover, light resistance fatigue occurs during repeated use, image blurring occurs, and electrical and optical characteristics are not always stable, and the usage environment (temperature, humidity)
The impact of this cannot be ignored. It is also necessary to further improve the adhesion between the intermediate layer and the charge generation layer. C1 Object of the invention The object of the invention is to provide excellent adhesion between the intermediate layer and the charge generation layer, resistance to mechanical damage, excellent rigidity resistance, and stable image quality without image deletion. It is an object of the present invention to provide a photoreceptor which has little optical fatigue during repeated use, has a low residual potential, and whose characteristics are stable regardless of the usage environment (temperature, humidity). 29 Structure of the invention and its effects, that is, the present invention is made of amorphous hydrogenated and/or fluorinated silicon heavily doped with an ITa group element of the periodic table and at least of carbon atoms, nitrogen atoms, and oxygen atoms. a charge blocking layer; a charge generating layer made of amorphized silicon containing carbon atoms; doped with an element of group 1IIa or Va of the periodic table and at least one of carbon atoms, nitrogen atoms and oxygen atoms; amorphous hydrogen; an intermediate layer made of hydrogenated and/or fluorinated silicon; an intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing more at least one of carbon atoms, nitrogen atoms, and oxygen atoms than the intermediate layer; This relates to a photoreceptor in which these are sequentially laminated. According to the present invention, since the intermediate layer contains at least one atom of carbon, nitrogen, and oxygen, it is resistant to mechanical damage, does not deteriorate image quality due to white streaks, etc., and has high rigidity resistance. It will be excellent. Furthermore, in the present invention, since the impurity-doped intermediate layer is provided between the intermediate layer and the charge generation layer, the adhesion between the intermediate layer and the charge generation layer is improved. In addition, since the intermediate layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent resistance to light fatigue during repeated use, has no image fading, has low residual potential, and has electrical and optical properties. It has been confirmed that the characteristics are always stable and are not affected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is AN
On a drum-shaped conductive support substrate 41 such as
A group A element (e.g. boron) is heavily doped and C,
a-3i:H (containing one of both) with low N and O (
This is expressed as a-S i (C)(N)(0):H. ), and a-3i:H (hereinafter referred to as a-3iC:H) which is light-doped with a group IIIa element of the periodic table (for example, boron) to become intrinsic and contains C. ), a charge generation layer 43 (without impurity doping or intrinsic) made of a-3i:H, and a charge generation layer 43 made of a-3i:H,
P+ type or N heavily doped with group or group Va elements
An intermediate 146 made of amorphous hydrogenated silicon that is + type and contains at least one of C, N, and O, and a P type or N
a-3i (C) (
N)(0): Represented as H. ) middle layer 45 consisting of
It has a laminated structure. Charge generation 1'i4
3 is the dark resistivity ρ. The ratio of resistivity ρ when irradiated with light is sufficiently large as an electrophotographic photoreceptor, and the photosensitivity (particularly to light in the visible and infrared regions) is good. In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is an almost linear relationship with E g, opt),
The carbon atom content can be defined by replacing it with an optical energy gear. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in charging potential holding ability can be obtained as shown by curve a in FIG. 3. That is, as shown by curve a in FIG. 3, when the carbon atom content is 30
When ~90% a-5iC:H is used, its resistivity varies with carbon content and is greater than or equal to 1012 Ω-ω. The above tendency is that a-3iN containing N or 0 instead of carbon
The same applies to :H,, a-3iO:H. The above-mentioned layer 45 is indispensable for modifying the surface of the photoreceptor and making the a-3i-based photoresistance practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:)l as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. In addition, since the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. . In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si+C=100at
When omtc% (hereinafter, atomic% is simply expressed as %), 1%≦(C)590%, furthermore 10%≦[
03670% is desirable. Due to this C content, the above-mentioned resistivity becomes the desired value, and the optical energy gap becomes approximately 2°5 eV or more, and the irradiated light becomes a-3i due to the so-called optically transparent window effect for visible and infrared light. : It becomes easier to reach the H layer (charge generation layer) 43. However, if the C content is 1% or less, disadvantages such as mechanical damage occur, and the specific resistance tends to fall below the desired value.
A portion of the light in the exposed portion is absorbed by the surface layer 45, and the photosensitivity of the photoreceptor tends to decrease. In addition, if the C content exceeds 90%, the amount of carbon in the layer increases, and semiconductor properties are likely to be lost, and the deposition rate when forming the a-3iC:H film by the glow discharge method is likely to decrease. The C content is preferably 90% or less. Similarly, for layer 45 containing nitrogen or oxygen, 1%
≦(N) 590%, (furthermore 10%≦[N3570%
) is good, 0%

[0]≦70% (furthermore, 5%≦(0)
530%) is good. In order to improve the charging ability, the intermediate layer 45 may have a high resistance. For this purpose, the intermediate layer may be made intrinsic. In order to facilitate the injection of electrons or holes from the intermediate layer into the intermediate layer and to minimize the residual potential in the use of positive or negative charging, the intermediate layer may be of P or N type. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsic: Bz Hb / Si H42~50 volume f
fippmP type: B2 H6/S i H450~
1000”N type: P H:l/S i H
a 1 to 1000 Also, the layer 45 is a-3i
It may be composed of CO, a-3iNOsa-3to, a-3ioz, etc., and it is also important to select the film thickness within the range of 400≦t≦5000 (particularly 400≦t<2000). That is, if the film thickness exceeds 5,000 layers, the residual potential (7) becomes too high and the photosensitivity decreases, resulting in a-3.
It is easy to lose the good characteristics of i-type bad sensitivity. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. The intermediate layer 46 is provided to improve sensitivity, reduce residual potential, improve adhesion of the intermediate layer, and stabilize images. In order to improve the above characteristics, it is necessary to make it P or N type. The impurity doping amount is (PH:I) / C3i Ha
) = 1 to 1000 (preferably 10 to 500) Capacity ppm, (B2 Hb ) / [S i H4] =
10-1000 (preferably 50-500) Capacity pp
It may be set as m. The C, N, and 0 contents of the intermediate layer 46 are as follows: 0<(C)510%, O<(N)510%, 0<(0)
It is best to set it to 55%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Regarding the charge generation layer 43, in order to improve the charging ability,
The resistance of the charge generation layer may be increased. For this purpose, the charge generation layer may be made intrinsic. This intrinsicization requires BZ
It is preferable that H6/S i H4 = 1 to 20 ppm by volume. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is preferable to set it to μm. If the thickness of the charge generation layer 43 is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 may be made intrinsic in order to optimize charging ability and sensitivity. The doping amount for making it intrinsic is
(Bz Hb) / (S i H4) = 2~2
0 capacitance ppm is optimal. However, since the above value depends on the degree of CtM, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 μm. The composition of the charge transport layer is preferably 1% or less, preferably 10%≦03530%. Further, in order to sufficiently prevent electron injection from the substrate 41 and improve sensitivity and charging ability, the charge blocking layer 44 is doped with an element of group FF1a of the periodic table (for example, boron) by glow discharge decomposition. , to become P type (and even P medium type). The doping amount is controlled by the composition of the printing layer as follows. a-3iC or a-5iCO: P type (''); B2 H6/S i H420~
5000 capacity ppm a-3iN or a-3iNO: P type (Psu) i Bz Hb / Si Ha2
000-5000 ppm by volume The blocking layer may be a compound such as 5iO1S iOz. Further, the thickness of the blocking layer 44 is preferably 500 μm to 2 μm. If it is less than 500, the blocking effect will be weak, and if it exceeds 2 μm, the charge transport ability will tend to deteriorate. The composition of the blocking layer 44 is preferably as follows. That is, 1% < [03590%, preferably 10%≦[03570%, and 1% < [N3690
%, preferably 10% < [N3570%, 0%≦
[03570%, preferably 0%≦

It is preferable that [0]≦30%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential for compensating for dangling bonds and improving photo-W conductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the intermediate layer 45, blocking layer 44, and charge transport layer 42. Also, do you control the conductivity type? As impurities for ff1l, in addition to boron, A It % Ga , I n
Group IIIa elements of the periodic table such as % T' can be used. N
For molding, in addition to phosphorus, materials such as As and sb from Periodic Table V
Group a elements can be used. Next, a method for manufacturing the above-mentioned photoreceptor (for example, drum-shaped) and its apparatus (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of S i Ha or a gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CHa, 64 is a supply source of nitrogen compound gas such as N2, and 65 is an oxygen compound such as 02. 66 is a carrier gas supply source such as Ar; 67 is an impurity gas (for example, BzHi) supply source; 6
8 is each flow meter. In this glow discharge device, first, the surface of a support, for example, an Aβ substrate 41, is cleaned and then placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is reduced to 1.
The temperature is adjusted and evacuated to O-6T orr, and the substrate 41 is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C). Next, using a high-purity inert gas as a carrier gas, SiH4 or a gaseous silicon compound, CH4, N2.02, etc. are appropriately introduced into the vacuum chamber 52, and high-frequency irradiation is performed under a reaction pressure of, for example, 0.01 to 10 Torr. A high frequency voltage (for example, 1
3.56 MHz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, P type a-3iC:H, i type a-3iC:Hla-
3i: H, P+ or N+ type a-S i C: Hla
-5iCO:H above layer 44.42.43.46.4
5 in succession (i.e., corresponding to the example of FIG. 1, for example). In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3t layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming each layer of the above a-3i photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of s iF4 instead of the above-mentioned H or in combination with H, and a-3i: F, a Si: H: F
% a S t N : F % a S s N
: H: F-, aSiC: F%a-
3iC:H:F can also be used. In this case, the fluorine content is preferably 0.5 to 10%. The above manufacturing method is based on the glow discharge decomposition method, but there are also sputtering methods, ion blating methods, and methods in which Si is evaporated while introducing activated or ionized hydrogen in a hydrogen discharge tube ( In particular, Japanese Patent Application Laid-Open No. 56-78413 (Japanese Patent Application No. 1524-1983) filed by the present applicant
The above photoreceptor can also be manufactured by the method of No. 55). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, after cleaning the surface of the support, for example, a drum-shaped A1% plate 41 with a smooth surface, it is placed in a vacuum chamber 52 shown in FIG.
' T orr, and then heat the substrate 41 to a predetermined temperature, particularly 100 to 350°C (preferably 100°C to 350°C).
50-300°C). Next, high purity A
r gas is introduced as a carrier gas, Q, 5 T or
A high frequency power with a frequency of 13.56 MHz was applied under a back pressure of r, and a preliminary discharge was performed for 10 minutes. Next, a reaction gas consisting of S i H4 and Bz Hb was introduced, and the flow rate ratio was 1:1:1:(1,5X
l0-') of (Ar+S iH4+CH4 or Nz +
BZ Hb) P-type a-3tC that plays a charge blocking function by decomposing the mixed gas by glow discharge:
6pm of HIJ44 and a-3iC:H charge transport layer 42
Films were sequentially formed to a predetermined thickness at a deposition rate of /hr. Subsequently, the supply of BzHh and CH was stopped, and SiH was decomposed by discharge to form a-3i: HJW43 having a thickness of 5 μm. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of the impurity gas to form an intermediate layer 46 whose film thickness is also changed, and an a-3iCO:H or a-5iNO:H surface protection layer 45 is further provided. , completed an electrophotographic photoreceptor. As a comparative example, a photoreceptor without an intermediate layer was prepared. The structure of the photoreceptor thus produced was summarized as follows. (1) 0 intermediate layer: a-5iNO:H or a-3iCO:H (2), intermediate layer: doping amount, film thickness change (see Figure 5) (31, a-3i: H charge generation layer: film Thickness -5 μm (41, a-3ic: H charge transport layer: film thickness = 14 μm C-containing flea = 11% With di-B doping for positive charging (51, a-3ic: H or a-3iN: H charge blocking layer : Film thickness = 1 μm Carbon content = 11% (6) Support: Al cylinder (mirror polished finish) Next, various tests were conducted using each of the above photoreceptors as follows. As shown in Figure 6, the 0,
A load W is applied to the 3R diamond needle 70, and the photoreceptor is moved by the motor 71.
Rotate it with and scratch it. Next, the electrophotographic copying machine U-
B 1x1600 (manufactured by Konishiroku Photo Industry Co., Ltd.) An image is produced using a modified machine, and the scratch strength (g) of the photoreceptor is determined by the load at which a white streak appears on the image. After acclimating the photoreceptor in a modified electrophotographic copying machine U-B 1x4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with a temperature of 33°C and a relative humidity of 80%, the photoreceptor was developed. agent, paper,
After 1000 copies were made without contact with the blade, an image was produced and the degree of image blurring was determined based on the following criteria. ◎There is no image blurring at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. 0: The 5.5 point letters are slightly thick (becomes). △: The 5.5 point letters are blurred and difficult to read. X: The 5.5 point letters are illegible. Residual potential ■R (■) U B 1x2500 By measuring the potential using a modified machine, 4
The surface potential of the photoreceptor remains even after being irradiated with static eliminating light of 30βux-sec having a peak at 00 nm. Using a 1x2500 modified machine (manufactured by Konishiroku Photo Industry 0 Kiku), the photoreceptor inflow current was 200 μA, and the temperature immediately before development was measured with a 360SX type electrometer (Treksha Raku) without exposure. surface potential of Wang Nim't, -E+zz (ffux°5ec) Using the above device, dichroic mirror (manufactured by Marshal Optical Co., Ltd.)
The exposure amount required to sharply cut long wavelength components of 620 nm or more of the image exposure wavelength and halve the surface potential from 500V to 250V. (The exposure amount was measured using a 550-1 plastic photometer (manufactured by EGandG)) The results are summarized in FIG. 7. These results show that if a photoreceptor is prepared according to the present invention, a photoreceptor with excellent performance for electrophotography can be obtained.

[Brief explanation of the drawing]

1 to 7 show embodiments of the present invention, FIG. 1 is a two-sectional view of an a-3i photoreceptor, and FIG. 2 is an a-3i photoreceptor.
Graph showing the optical energy gap of iC, FIG. 3 is a graph showing a-3iCO resistivity, FIG. 4 is a schematic cross-sectional view of the glow discharge device, FIG. 5 is a table showing the layer structure of each photoreceptor, FIG. 6 is a schematic diagram of a scratch strength tester, and FIG. 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39...A-3i photoreceptor 41...Support (substrate) 42...Charge transport layer 43...Charge generation layer 44... ... Charge blocking layer 45 ... Intermediate layer 46 ... Intermediate layer. Agent: Patent Attorney Hiroshi Aisaka 1'V7°. Figure 2 a-Si+-xcx+Hx Figure 3 Figure 6 Figure 4

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon heavily doped with a Group IIIa element of the periodic table and containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; A charge transport layer made of amorphous hydrogenated and/or fluorinated silicon; A charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; Doped with a group IIIa or Va element of the periodic table and made of carbon atoms, nitrogen an intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of atoms and oxygen atoms; containing at least one of carbon atoms, nitrogen atoms and oxygen atoms in a larger amount than the intermediate layer; A photoreceptor in which surface-modified layers made of amorphous hydrogenated and/or fluorinated silicon are sequentially laminated.