JPS61294459A - Photosensitive body - Google Patents

Abstract

PURPOSE:To obtain a stale picture quality having a less tendency for an image flow by laminating each specific an electric charge blocking layer, an electric charge transfer layer, an electric charge generating layer, an intermediate layer and a surface reforming layer in order on a substrate. CONSTITUTION:The photosensitive body 39 is laminated the N<+> type electric charge blocking layer 44 composed of a-Si:H which is heavily doped with an element belonging to the group Va of the periodic table of the element, and contains one of the atoms of C, N, and O, and the electric charge transfer layer 42 composed of a-Si:H which is made an intrinsic, by lightly doping it with an element belonging to the group IIIa of the periodic table of the element, and contains an atom N in order on the drum shaped conductive substrate 41 composed of Al. The titled body is constituted by laminating the electric charge generating layer 43 composed of a-Si:H, the intermediate layer 46 composed of a P<+> or N<+> type amorphous hydrogenated silicon which is heavily doped with an element belonging to the group IIIa or Va of the periodic table of the element, and the surface reforming layer 45 composed of an amorphous hydrogenated silicon which is made to a P-type or a N-type or an intrinsic by doping it with an element belonging to the group IIIa or Va of the periodic table of the element, and contains one of atoms of N, C and O atoms.

Description

[Detailed description of the invention]

B. Industrial Application Field The present invention relates to a photoreceptor, for example, an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or As in Se,
Photoreceptor doped with Te % Sb etc., ZnO or CdS
Photoreceptors, etc., in which the compound is dispersed in a resin binder are known. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength. On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as a matrix have been proposed in recent years. a-3i has a so-called dangling bond in which the bond of 5i-3i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in low dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, we replaced the above defects with hydrogen atoms (
The dangling bonds are filled by bonding H to St by compensating with H). Such amorphous hydrogenated silicon (hereinafter referred to as a-5
It is called t:H. ) has a resistivity in the dark of 10” to 10
9 Ω-cm, which is about 1/10,000 times lower than that of amorphous Se. Therefore, a photoreceptor made of a single layer of a-3i:H has a high dark decay rate of surface potential and a low initial charging potential. There is a problem with this. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor. Figure 8 shows a-5 with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating an i-series irradiance 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3, an optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflection mirror 6 is provided so as to be movable in a straight line in the left and right direction of the drawing. A second mirror unit 20 for making the optical path length with the body constant is connected to the first mirror unit 20.
The mirror unit moves according to the speed of the mirror unit, and the reflected light from the document table 3 side is incident on the photosensitive drum 9 as an image carrier through the lens 21 and the reflection mirror 8 in the form of a slit. . A corona charger 1 is installed around the drum 9.
0, a developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper feed box 15 through the paper feed rollers 16 and 17 is transferred with the toner image on the drum 9. Afterwards, the image is further fixed in the fixing unit 19 and then discharged onto the tray 35. In the fixing section 19, a heater 22
A fixing operation is performed by passing the developed copy paper between a heating roller 23 having a built-in image and a pressure roller 24. However, photoreceptors with a-3t:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere and moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-3iC:H
It is called. ), its manufacturing method and existence” Ph1l
, Mag, Vat, 35” (197B), etc., and its characteristics include high heat resistance and surface hardness, and a high dark resistivity (compared to a-3t:H).
It is known that the optical energy gap varies over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3i:H is disclosed in, for example, Japanese Patent Application Laid-Open No. 55-127083270.
Publication No. 83 has been proposed. According to this, a-si
:HWi is used as a charge generation (photoconductive) layer, an a-3iC:H layer is provided under this charge generation layer, and the upper layer a-3i:H provides photosensitivity in a wide wavelength range, and a-3t: The charging potential is improved by the lower layer a-3iC:H forming a heterojunction with the H layer. However, a-3t:
HJ! The dark decay of F cannot be sufficiently prevented and the charging potential is still insufficient to be practical, and the presence of a-3t:HJli on the surface impairs chemical stability. Mechanical strength, heat resistance, etc. become poor. On the other hand, JP-A-57-17952 discloses a-3t:
A first a-3iC:HIII layer is formed on the charge generation layer made of H.
is formed as a surface modification layer, and a second a-3iC:H layer is formed on the back surface (support electrode side). In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a gradient layer (a5in-xCx:H) is provided between the charge generation layer and the first and second a-3iC:H layers, and in this gradient layer, a -3i: Set X=0 on the H side, a-3iCi
A photoreceptor in which X=0.5 on the H layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so pronounced, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. Furthermore, light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the use environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. C.9 Purpose of the Invention The purpose of the present invention is to provide excellent adhesion between a surface modified layer and a charge generation layer, strong resistance to mechanical damage, and excellent rigidity resistance.
Stable image quality with no image blurring is obtained, there is little optical fatigue during repeated use (and the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. 20 Structure of the invention and its effects, that is, the present invention provides a charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon containing; a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon;
an intermediate layer doped with an element of group IIIa or group Va of the periodic table and consisting of amorphous hydrogenated and/or fluorinated silicon; containing at least one of carbon atoms, nitrogen atoms and oxygen atoms and amorphous hydrogenated; as well as/
Alternatively, the present invention relates to a photoreceptor in which surface-modified layers made of fluorinated silicon are sequentially laminated. According to the present invention, since the surface modified layer contains at least one atom of carbon, nitrogen, and oxygen, it is resistant to mechanical damage, and there is no deterioration in image quality due to white streaks, etc., and it is resistant to It has excellent rigidity. Further, in the present invention, since the impurity-doped intermediate layer is provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. Furthermore, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent resistance to light fatigue during repeated use, no image fading, low residual potential, and electrical resistance. It has been confirmed that the optical properties are always stable and unaffected by the usage environment. E. Examples Below, the present invention will be described in detail with reference to Examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is A7
! On a drum-shaped conductive support substrate 4 such as
From a-3i:H (denoted as a-S 1(C)(N)(0);H) which is heavily doped with a group element (e.g. phosphorus) and contains at least one of C, N and O. N-type heavy charge blocking layer 44, III of the periodic table
A-3t:H (which is a Si
N: Not expressed as H. ) and a-3.
i: A charge generation layer 43 made of H (without impurity doping or made intrinsic) and an intermediate layer made of P' type or N' type amorphous hydrogenated silicon heavily doped with Group IIIa or Group Va elements of the periodic table. J146 and amorphous hydrogenated silicon doped with a Group IIIa or Group Va element of the periodic table to make it P-type or N-type or intrinsic (or without impurity doping) and containing at least one of N, C and O. (Convert this to a -5i(C) (
N) (0): Represented as H. ) and a surface-modified layer 45 that is laminated. Charge generation layer 4
3 is the dark resistivity ρ. The ratio of resistivity ρ when irradiated with light is sufficiently large as an electrophotographic photoreceptor, and the photosensitivity (particularly to light in the visible and infrared regions) is good. In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is a substantially linear relationship with Eg, opt), the carbon atom content can be defined by replacing it with the optical energy gap. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an upper limit of specific resistance and an improvement in the charging potential holding ability can be obtained as shown by curve a in FIG. That is, as shown by the curve vAa in Fig. 3, when a SiC:H with a carbon atom content of 30 to 90% is used, its resistivity changes according to the carbon content, and reaches 10'2 Ω-cm or more. Become. The above tendency is that a-3iN containing N or O instead of carbon
: H, a-3iO: The same applies to H. The above-mentioned layer 45 is indispensable for modifying the surface of the photoreceptor and making the a-5t-based photoresistance practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-5i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. In addition, since the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. . In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si + C-4C-4
When 00ato% (hereinafter, atomic% is simply expressed as %), 1%≦(C)590%, furthermore 10%≦
(C) Desirably 570%. Depending on the amount of C content, the above-mentioned specific resistance becomes a desired value, and the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is a- It becomes easier to reach the 3trH layer (charge generation layer) 43. However, if the C content is 1% or less, disadvantages such as mechanical damage occur, and the specific resistance tends to fall below the desired value.
In addition, a portion of the light is absorbed by the surface N45, and the photosensitivity of the photoreceptor tends to decrease. In addition, if the C content exceeds 90%, the amount of carbon in the layer increases, and semiconductor properties are likely to be lost, and the deposition rate when forming the a-3iC:H film by the glow discharge method is likely to decrease. The C content is preferably 90% or less. Similarly, in the case of the layer 45 containing nitrogen or oxygen, 1%≦(N)590% (furthermore, 10%≦(N)
570%) is good, 0% < [01570% (even 5
%≦

[0]≦30%). In order to improve the charging ability, the surface-modified N45 may be made to have a high resistance. For this purpose, the surface modification layer may be made intrinsic. When used with positive or negative charging, in order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to minimize the residual potential, the surface-modified layer may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. "2"1"3"°1"1~1ooc (!7 jobs 1su's
:c::::p:That Also, layer 45 is a-5ilo
, a-3iNO, a-3iO1a Sing, etc., and it is also important to select the membrane J7 within the range of 400 people ≦ t ≦ 5000 people (especially 400 people ≦ t ≦ 2000 people. That is, If the film thickness exceeds 5000, the residual potential V, l becomes too high and the photosensitivity decreases, which tends to cause the good characteristics of the a-3i type photosensitive to be lost. If the thickness is less than that of human, the tunneling effect will stop the charge from being charged on the surface, resulting in an increase in dark decay and a decrease in photosensitivity.As for the intermediate layer 46, in order to reduce the residual potential, The intermediate layer may be of P or N type to enable injection of charge from the generation layer.The doping amount for exclusive electric type control may be the same as that of the surface modification layer.The thickness of this intermediate layer is The number is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above is likely to occur, and if it is less than 50 people, the effect as an intermediate layer will be poor.Preferably, the number is 100 Å or more and 100 Å or less. Regarding the charge generation layer 43, in order to improve the charging ability,
The resistance of the charge generation layer may be increased. For this purpose, the charge generation layer may be made intrinsic. For this intrinsicization, B z
It is preferable that Hb/S i Ha = 1 to 20 ppm by volume. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is better to set it to m. If the charge generation [43] is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 may be made intrinsic as necessary in order to optimize charging ability and sensitivity. The doping amount for making it intrinsic is (BzHi)/(SiH
4=1-2000 capacity ppI11 is optimal. however,
Since the above value depends on the N concentration, it is not necessarily limited to the above value. The thickness of the charge transport layer is lO~30μl
It is better to Also,! The composition of the cargo transport layer is 1%
03530%, preferably 10%≦(C)530%. In addition, the charge blocking layer 44 sufficiently prevents injection of electrons from the substrate 41, and in order to improve sensitivity and charging ability, the charge blocking layer 44 decomposes Group Va elements (for example, phosphorus) in the periodic table by glow discharge as necessary. It is doped to make it intrinsic and further to N-type (and further N'-type). Depending on the composition of the blocking layer,
The doping amount is controlled as follows. a-5IC or a-5iCO: Intrinsic Bglala/5i
lla 2~20 volumes W! tppmN type (N')
PI! 31511141~1000 #a-3iN or a-5LNO: Intrinsic B mountain/5llli 1~
zoooo “N type (N”) pH>/5il141~
2000 The blocking layer may be a compound such as 5iO1SiO. 1 In addition, the blocking layer 44 has a film thickness of 500 to 2 μm.
m is good. If it is less than 500 people, the blocking effect will be weak, and if it exceeds 2 μl, the charge transport ability will tend to deteriorate. The composition of the bronking layer 44 is preferably as follows. That is, 1%<[03590%, preferably 10%≦(C)570%, and 1%<[N3590%
, preferably 10%<[N3570%, 0%≦[0
]≦70%, preferably 0%≦

It is preferable that [0]≦30%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range is the same for the surface modification layer 45, blocking layer 44, and charge transport layer 42. Further, as an impurity for controlling the conductivity type of the blocking layer 44, in addition to boron, Af, Ga, and In may be used to make the blocking layer 44 P-type.
, TI, and other Group IIa elements of the periodic table can be used. For N-type conversion, in addition to phosphorus, materials such as As and Sb from Va in the periodic table must be used.
Group elements can be used. Next, a method for manufacturing the above-mentioned photoreceptor (for example, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is vertically rotatably placed in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between it and the base Fi 41 by a high frequency power source 56. In addition,
In the figure, 62 is a supply source of S i H4 or a gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CH4, and 64 is a supply source of a hydrocarbon gas such as CH4.
is a supply source of nitrogen compound gas such as N2, 65 is a supply source of oxygen compound gas such as 02, 66 is a carrier gas supply source such as Ar, 67 is an impurity gas (for example, BzHi,) supply source,
6B is each flow meter. In this glow discharge device,
First, after cleaning the surface of a support, for example, an Af substrate 4I, it is placed in a vacuum chamber 52, the gas pressure in the vacuum chamber 52 is adjusted to 10-b Torr, and the substrate 41 is evacuated. It is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C). Next, using a high-purity inert gas as a carrier gas, S i H4 or a gaseous silicon compound, CH4, N2.02, etc. are appropriately introduced into the vacuum chamber 52, and a high frequency power source is applied under a reaction pressure of, for example, 0.01 to 10 Torr. 56 to generate a high frequency voltage (e.g. 1
3.56 MHz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and N9 type a SiC: HX' type a-3iN:
H-, a St: 8% P'' or N+ type a-3
i :H, a-3iC: H in the above layer 44.42.
43, 46, 45 on the substrate successively (i.e. corresponding to the example of FIG. 1, for example). In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-5i layer on the support, so it is possible to improve the film quality (especially the electrical properties) of the photoreceptor. In addition, when forming the above a-Si photoreceptor photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of SiF4 or the like instead of the above-mentioned H or in combination with H, and aSi:F, a-3t:H:F, a-3
iN:Fs a-3tN:H:F, a-siC:F, a
-3iC:H:F can also be used. In this case, the fecal content is preferably 0.5 to 10%. The above manufacturing method is based on the glow discharge decomposition method, but other methods include the sputtering method, the ion plating method, and the evaporation of Si while introducing activated or ionized hydrogen in a hydrogen discharge tube. Method (in particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, a support, for example, a drum-shaped AI with a smooth surface! After cleaning the surface of the substrate 41, it is placed in a vacuum chamber 52 shown in FIG. 4, and the gas pressure in the vacuum chamber 52 is set to 10-
"Torr" and exhaust the air, and the substrate 41
at a predetermined temperature, especially 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, high purity Ar
A gas was introduced as a carrier gas, and high frequency power with a frequency of 13.56 MHz was applied under a back pressure of 0.57 orr to perform a preliminary discharge for 10 minutes. Next, a reaction gas consisting of SiH4 and PH1 is introduced,
Flow rate ratio 1: 1: 1: (1,5xlO-3
) by glow discharge decomposition of (Ar+SiH4+CH, or Nz+PH1) mixed gas, N+ type a-3iC:I (layer 44 and a-3
6. iN:H charge transport layer 42; Films were sequentially formed to a predetermined thickness at a deposition rate of crm/hr. Continuing, B z Hb
and stop the supply of CHJ, decompose S i H4 by discharge,
An a-3i:H layer 43 having a thickness of 5 μm was formed. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of impurity gas to form an intermediate layer 46 with a changed film thickness, and further BzHb
/5iHa = a-3iCO as 100 capacitance ppm
:H or a-3iNO:H surface protection layer 45 is further provided,
Completed an electrophotographic photoreceptor. As a comparative example, a photoreceptor without an intermediate layer was prepared. The structure of the photoreceptor thus produced was summarized as follows. (1) 8 surface modification fi5: a-5iNO: H or a-3iCO: H (2), intermediate layer: doping amount, film thickness change (see Figure 5) (
31, a-3i: H charge generation layer: film thickness = 5 μm (
41,a -SiN:H charge transport layer: film thickness 15 μm
N content = 12% (5), a-SiC:H or a-5iN:H charge profking layer: film thickness = 0.5 μm Carbon content -12% (6), Support: Al cylinder (mirror surface) (Polishing Finish) Next, various tests were conducted using each of the photoreceptors described above as follows. ■ As shown in Figure 6, the 0,
A load W is applied to the 3R diamond needle 70, and the photoreceptor is moved by the motor 71.
Rotate it with and scratch it. Next, the electrophotographic copying machine U-
An image is produced using a modified B ix 1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image. After acclimatizing the photoreceptor in a modified electrophotographic copying machine U-Bix 4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with a temperature of 33° C. and a relative humidity of 80%, the developer, paper,
After 1000 copies were made without contact with the blade, an image was produced and the degree of image blurring was determined based on the following criteria. ◎There is no image blurring at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. 0: 5.5 point letters become slightly thicker. △: 5.5 point letters are crushed and difficult to read. X: 5.5 points of unreadable letters. By measuring the potential using a modified VR (V) U-B ix 2500,
Static elimination light 3Q I! with a peak at 400nI11! ux
The surface potential of the photoreceptor remaining after irradiation with −sec. Obi position■. (V) Surface potential immediately before development measured using a modified U-Bix 2500 machine (manufactured by Konishi Roku Photo Industry ■) with a 360SX type electrometer (manufactured by Toresok Co., Ltd.) under conditions of a photoconductor inflow current of 200 μA and no exposure. Half-power light E 1/2 (ji! ux-sec) Using the above device, dichroic mirror (manufactured by Kotai Kogaku Co., Ltd.)
The long wavelength component of 620 m or more of the image exposure wavelength is sharply cut, and the surface potential is increased from 500 V to 250 V.
The amount of exposure required to reduce the amount of light by half. The results are summarized in Figure 7. These results show that if a photoreceptor is prepared according to the present invention, a photoreceptor with excellent performance for electrophotography can be obtained.

[Brief explanation of drawings]

1 to 7 show examples of the present invention, in which FIG. 1 is a cross-sectional view of the a-3i-based nausea photo, and FIG. 2 is a-3
Figure 3 is a graph showing the specific resistance of a-3iC, Figure 4 is a schematic cross-sectional view of the glow discharge device, and Figure 5 is a table showing the layer structure of each photoreceptor. , FIG. 6 is a schematic diagram of a scratch strength tester, and FIG. 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39-...
−−−−−−−−−−・−Support (substrate) 42=・−−
------- Charge transport layer 43- -------
----1 charge generation layer 44・---------1-・-・
- Charge blocking layer 45 --- Surface modification layer 46 --- Intermediate layer. Agent Patent Attorney Hiroshi Aisaka Figure 2 o-9l+-xCx:Hx Figure 3 Figure 6 Figure 4

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms and oxygen atoms; a charge transport layer consisting of; a charge generation layer consisting of amorphous hydrogenated and/or fluorinated silicon;
an intermediate layer doped with a group or Va element and consisting of amorphous hydrogenated and/or fluorinated silicon; containing at least one of carbon atoms, nitrogen atoms and oxygen atoms and containing amorphous hydrogenated and/or fluorinated silicon; A photoreceptor that is made up of successive layers of surface-modified silicon chloride layers.