JPS6228754A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen, and an oxygen atoms, and heavily dopped with the group IIIa element of the periodic table, an electric charge transfer layer 42 composed of a-Si:H contg. the nitrogen and the oxygen atoms and an electric charge generating layer 43 composed of a-Si:H are laminated on a substrate 41. And the intermediate layer 46 composed of a-Si:H contg. at least one kind atom selected from the carbon, the nitrogen and the oxygen atoms and dopped with the group IIIa or Va element of the periodic table, and the surface reforming layer 45 composed of a-Si:H contg. large amounts of the atom are laminated on the substrate 41 to form the photosensitive body 39. By providing the layers 45 and 46, the mechanical strength of the titled body becomes large. The adhesive property, the anti-fatigue property against a light and the anti-chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obtd. by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

[Detailed description of the invention]

B. Industrial Application Field The present invention relates to a photoreceptor, for example, an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or Se has A s
Photoreceptors doped with 1Te-, Sb, etc., photoreceptors in which ZnO or CdS is dispersed in a resin binder, and the like are known. However, these photoreceptors are environmentally polluting and
There are problems with thermal stability and mechanical strength. On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as an i-form have been proposed in recent years. a-3t has a so-called dangling bond in which the 5i-3i bond is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, we replaced the above defects with hydrogen atoms (
The dangling bonds are filled by bonding H to Si by compensating with H). Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) has a resistivity in the dark of 108 to 10
”Ω-■, which is about 1 compared to amorphous Se.
It's even lower than 1/10,000. Therefore, a photoreceptor consisting of a single layer of a-3t:H has the problem of a fast dark decay rate of surface potential (low initial charging potential). When irradiated with light of 3i
An electrophotographic copying machine incorporating a system photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3,
An optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflecting mirror 6 is provided so as to be movable linearly in the left-right direction of the drawing, and the optical path length between the document scanning point and the photoreceptor is kept constant. The second mirror unit 20 moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 onto the photosensitive drum 9 as an image carrier. The light enters in a slit shape. Around the drum 9, a corona charger 10,
A developing device 11, a transfer section 12, a separating section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the folding box 15 through the paper feed rollers 16 and 17 is processed after the toner image on the drum 9 is transferred. Further, the sheet is fixed in the fixing section 19 and is discharged to the tray 35. In the fixing section 19, the developed copy paper is passed between a heating roller 23 containing a heater 22 and a pressure roller 24 to perform a fixing operation. However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-3iC:H
It is called. ), its manufacturing method and existence” Ph11
．． Mag, Vol. 35'' (197B), etc., and its characteristics include high heat resistance and surface hardness, and a high dark resistivity (1
It is known that the optical energy gap changes over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3i:H has been proposed, for example, in Japanese Patent Application Laid-Open No. 127083/1983. According to this, a-3isH
The layer is charge-generating (photoconductive) N, and below this charge-generating layer is a
-3iCsH layer is provided, the upper layer a-3i:H provides photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forming a heterojunction with the a-3isH layer improves the charging potential. ing. However, the dark decay of the a-3i:H layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
The presence of H5 causes poor chemical stability, mechanical strength, heat resistance, etc. On the other hand, JP-A-57-17952 discloses a-3i:
A first a-5iC:H layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-5iC:H layer is formed on the back surface (support electrode side).
A SiC:l (forming a layer).In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a gradient layer (a 5it-x Cx :H) is provided between the charge generation layer and the first and second a-3iCsH layers, and in this gradient layer, a- 3t: X-0 on the H side, a-3iC:
A photoreceptor in which X=0.5 on the H layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so pronounced, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. Moreover, light resistance fatigue occurs during repeated use, image blurring occurs, and electrical and optical characteristics are not always stable, and the usage environment (?A degree,
The influence of humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. C1 Object of the invention The object of the invention is to provide excellent adhesion between the surface modification layer and the charge generation layer, resistance to mechanical damage, and excellent rigidity resistance.
Stable image quality without image blurring is obtained, there is little optical fatigue during repeated use, the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. 20 Structure of the invention and its effects, that is, the present invention provides an amorphous hydrogenated and/or fluorinated amorphous material heavily doped with a Group IIIa element of the periodic table and containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms. a charge blocking layer made of silicon; an amorphous hydrogenated layer containing nitrogen atoms and oxygen atoms;
or an intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms doped with a group IIIa or group Va element of the periodic table; ; carbon atom,
The present invention relates to a photoreceptor in which surface-modified layers made of amorphous hydrogenated and/or fluorinated silicon containing at least one of nitrogen atoms and oxygen atoms in a larger amount than the intermediate layer are sequentially laminated. According to the present invention, since the surface modified layer contains at least one atom of carbon, nitrogen, and oxygen, it is resistant to mechanical damage, and there is no deterioration in image quality due to white streaks, etc., and it is resistant to It has excellent rigidity. Further, in the present invention, since the impurity-doped intermediate layer is provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. Furthermore, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent resistance to light fatigue during repeated use, no image fading, low residual potential, and electrical resistance. It has been confirmed that the optical properties are always stable and unaffected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is An
On a drum-shaped conductive support substrate 41 such as
A group A element (e.g. boron) is heavily doped and C,
a-8i containing at least one of , N and 0:)(
(This is expressed as a-S i (C)(N)(0):H).) The P+ type charge profking layer 44 is light-doped with an element of group 111a of the periodic table (for example, boron) and is made intrinsic. a-3i:H containing N and O
(this is expressed as a-3iNO:H), a charge-generating layer 43 made of a-3i:H (without impurity doping or made intrinsic), and P heavily doped with group Va elements
? intermediate layer 4 made of amorphous hydrogenated silicon of type or N" type and containing at least one of C, N, and 0;
6, and an amorphous hydrogenated silicon doped with an element of Group TfIa or Group Va of the periodic table and made P-type or N-type or intrinsic (or without impurity doping) and containing at least one of N, C, and 0. (This is a −S
Expressed as i (C) (N) (0):H. ) and a surface-modified layer 45 that is laminated. JEJ43 has a sufficiently large ratio of resistivity ρ in the dark and resistivity ρ during light irradiation as an electrophotographic photoreceptor, and has photosensitivity (
Particularly good against light in the visible and infrared regions). In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is a substantially linear relationship with Eg, opt), the carbon atom content can be defined by replacing it with the optical energy gap. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in charging potential holding ability can be obtained as shown by curve a in FIG. 3. That is, as shown by curve a in FIG. 3, when the carbon atom content is 30
When ~90% a-S i C:H is used, its resistivity varies with carbon content and is greater than 10'2 Ω-1. The above tendency is that a-3iN containing N or O instead of carbon
The same applies to :H, a-3iO:H. The above-mentioned layer 45 is indispensable for modifying the surface of the photoreceptor and making the a-3i-based photoresistance practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. In addition, since the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. . In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si+C=100at
When omic% (hereinafter, atomic% is simply expressed as %), 1%≦[03590%, furthermore 10%≦
03570% is desirable. Due to this C content, the above-mentioned resistivity becomes the desired value, and the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is a-3i due to the so-called optically transparent window effect for visible and infrared light. : It becomes easier to reach the H layer (charge generation layer) 43. However, if the C content is 1% or less, disadvantages such as mechanical damage occur, and the specific resistance tends to fall below a desired value, and part of the light is absorbed by the surface layer 45, reducing the photosensitivity of the photoreceptor. It becomes easier to do. Furthermore, if the C content exceeds 90%, the amount of carbon in the layer increases, and semiconductor properties are likely to be lost, and a
-5iC: Since the deposition rate when forming the H film by the glow discharge method tends to decrease, the C content is preferably 90% or less. Similarly, in the case of layer 45 containing nitrogen or oxygen, 1%≦
(N)590% (furthermore, 10%≦(N)570%) is good, and 0%<

[0]≦70% (even 5%≦

[0]≦3
0%) is better. In order to improve the charging ability, the surface modified layer 45 may have a high resistance. For this purpose, the surface modified layer may be made intrinsic. When used with positive or negative charging, in order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to minimize the residual potential, the surface-modified layer may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsic: B2 Hb / Si H42-50 Capacity ppmP Type: B2 Hb /5iH450-1000
〃N type: PHi /S iHn 1-100
0 Also, the layer 45 is a-3iCO1a-3iNO1a-
3iO, a-3ioz, etc., and the film thickness is within the range of 400≦t≦5000 (especially 400≦
It is also important to select t<2000 people. That is, if the film thickness exceeds 5,000 layers, the residual potential (7) becomes too high and the photosensitivity decreases, resulting in a-3.
It is easy to lose the good characteristics of i-type bad sensitivity. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. The intermediate layer 46 is provided to improve sensitivity, reduce residual potential, improve adhesion of the surface modified layer, and stabilize images. In order to improve the above characteristics, it is necessary to make it P or N type. The amount of impurity doping is CP Hz:l/(S i H
4) = 1-1000 (preferably 10-500) capacity ppm, (Bz Hb) / (S i H4) =
10-1000 (preferably 50-500) Capacity pp
It may be set as m. The C, N, and C contents of the intermediate layer 46 are 0ku [00510%, 0ku [83510%, 0<(0)
It is preferable to set it to ≦5%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Regarding the charge generation layer 43, in order to improve the charging ability,
The resistance of the charge generation layer may be increased. For this purpose, the charge generation layer may be made intrinsic. For this intrinsicization, Bz
It is preferable that Hb/S i H4 = 1 to 20 ppm by volume. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is preferable to set it to μm. If the thickness of the charge generation layer 43 is less than 1 μm, the photosensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. Regarding the charge transport layer 42, it is necessary to make it intrinsic in order to optimize charging ability and sensitivity. The doping amount for making it intrinsic is CBZ H6:l/(S i H4) = 1~
2000 capacitance ppm is optimal. However, the above value is N
Since it depends on the rM degree, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 μm. The composition of the charge transport layer is preferably 1% [N9530%, preferably io%≦CN]530%, and 0%<[
0) 51.0%, preferably 0%<[0)≦2. Further, in order to sufficiently prevent electron injection from the substrate 41 and to improve sensitivity and charging ability, the charge bronking layer 44 is doped with an element of group IIIa of the periodic table (for example, boron) by glow discharge decomposition. It becomes P type (and P+ type). The doping amount is controlled as follows depending on the composition of the bronking layer. a-5iC or a-3iCO: P type (P”); Bz Hb / S r H4
20-5000 volume Wkppm a-3iN or a-3iNO: P type (Pya); Bz Hb / SI Ha2
000-5000 volume Wk p p m The blocking layer may be a compound such as Sin, 5in2, etc. The flocking layer 44 preferably has a thickness of 500 to 2 .mu.m. If there are fewer than 500 people, the blocking effect will be weak.
Further, if the thickness exceeds 2 μm, the charge transport ability tends to deteriorate. The composition of the blocking layer 44 is preferably as follows. That is, 1% [03690%, preferably 10%≦(C)570%, and 1% [N] 59
0%, preferably 10% < [N3570%, 0%
≦

[0]≦70%, preferably 0%≦

It is preferable that [0]≦30%. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification layer 45, blocking layer 44, and charge transport layer 42. In addition, as an impurity for controlling the conductivity type, in addition to boron, A11Ga, InXTA, etc.
Group elements can be used. In addition to phosphorus, A is required for N-type conversion.
Group Va elements of the periodic table, such as s and sb, can be used. Next, a method for manufacturing the above-mentioned photoreceptor (for example, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of SiH4 or a gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CHa, and 64 is a N2
65 is a supply source of oxygen compound gas such as 02, 66 is a carrier gas supply source such as Ar,
67 is an impurity gas (for example, 82 H6) supply source, and 68 is each flow meter. In this glow discharge device, first, a support such as A! After cleaning the surface of the substrate 41, it is placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is set to 1O-
Adjust the exhaust to 6T orr, and then remove the substrate 4.
1 at a predetermined temperature, particularly 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, using a high-purity inert gas as a carrier gas, SiHs or gaseous silicon compounds, CH4, N2, O□, etc. are suitably added to the vacuum chamber 5.
2, and a high frequency voltage (for example, 13°5
6MHz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and P+
Type a-3iC:H, i-type 5iNO:Hla-3i:H,
Pya or N+ type a-3iC:Hla-3iC:H is deposited successively (i.e. corresponding to the example of FIG. 1, for example) on the substrate as the above-mentioned layers 44. . In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming the above a-3i photoreceptor photosensitive layer,
In order to compensate for dangling bonds, fluorine is introduced in the form of SiF4 or the like in place of the above-mentioned H or in combination with H to form a-3i:F. a-3i:H:F, a-3iN:F. a-3iN:H:F, a-3iC:F. It can also be a-3iC:H:F. In this case, the amount of fluorine is preferably 0.5 to 10%. The above manufacturing method is based on the glow discharge decomposition method, but there are also sputtering methods, ion blating methods, and methods in which Si is evaporated while introducing activated or ionized hydrogen in a hydrogen discharge tube ( In particular, Japanese Patent Application Laid-Open No. 56-78413 (Japanese Patent Application No. 1524-1983) filed by the present applicant
The above photoreceptor can also be manufactured by the method of No. 55). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, drum-shaped A7! An electrophotographic photoreceptor having the structure shown in FIG. 1 was prepared on a support. That is, first, after cleaning the surface of a support, for example, a drum-shaped A2 substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 shown in FIG.
The substrate 41 is evacuated and adjusted so that the
at a predetermined temperature, especially 100 to 350°C (preferably 150°C)
-300°C). Next, high-purity Ar gas was introduced as a carrier gas, high-frequency power with a frequency of 13.56 MHz was applied under a back pressure of 0.5 Torr, and preliminary discharge was performed for 10 minutes. Next, a reaction gas consisting of SiH4 and B2H6 was introduced, and the flow rate ratio was 1:1:1:(1,5Xl0-
3) (Ar+S iH, +CH4 or Nz + BZ
Hb) By decomposing the mixed gas by glow discharge,
P+ type a-3iC:H layer 44 and a-3iNO:H charge transport layer (B2H6/s
, iH, = 500% by volume, (N) = 12%, (0)
= 1000 ppm (for S i)) 42 and 6u
Films were sequentially formed to a predetermined thickness at a deposition rate of m/hr. Subsequently, the supply of BzHb and CH was stopped, and SiH was decomposed by discharge to form an a-3t:H layer 43 with a thickness of 5 μm. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of the impurity gas, and an intermediate layer 46 with a changed film thickness is formed.
An a-3iCO:H or a-3iNO:H surface protective layer 45 was further provided as an electrophotographic photoreceptor. As a comparative example, a photoreceptor without an intermediate layer was prepared. The structure of the photoreceptor thus produced was summarized as follows. (1) 0 surface modified layer: a-3iNO:H or a-5iCO:H (2), intermediate layer: doping amount, film thickness change (see Figure 5) (3), a-3i: H charge generation Layer: Film thickness = 5μ
m (41, a-3iNo: H charge transport layer: film thickness -15
μm N content = 11% 0 content = 0.2% (5), a-3iNO: H charge blocking layer:
Film thickness = 0.5 μm Nitrogen content -11% For positive charging: B doped (6), support: Al cylinder (mirror polished finish) Next, various tests were performed using each of the above photoreceptors as follows. I did it like this. ■ Nisa Kokiko As shown in Figure 6, the 0,
3 Apply a load W to the R diamond needle 70, and move the photoreceptor to the motor 7.
Rotate it with 1 and make a scratch. Next, electrophotographic copying
-B 1x1600 (manufactured by Konishiroku Photo Industry Co., Ltd.) An image is produced using a modified machine, and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image. The photoreceptor was allowed to acclimatize in a modified electrophotographic copying machine U-B 1x4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours under an environment of a normal temperature of 33°C and a relative humidity of 80%, and then the developer and paper were removed. ,
After 1000 copies were made without contact with the blade, an image was produced and the degree of image blurring was determined based on the following criteria. ◎: There is no image flow at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. ○: 5.5 point alphabetic characters are slightly thicker. △: 5.5 point letters are crushed and difficult to read. X: 5.5 points of unreadable letters. 1 Retention potential VR (V) U -B 4 by potential measurement using a 1x2500 modified machine
Static neutralizing light with peaks at 00n and m 30 E ux-s
The surface potential of the photoreceptor that remains even after irradiation with ec. Charged potential■. (V) Surface potential immediately before development measured using a U-B 1x2500 modified machine (manufactured by Konishiroku Photo Industry II) with a 360SX type electrometer (manufactured by Trek) under conditions of a photoconductor inflow current of 200 μA and no exposure. Half reduction E I/Z (12ux-sec) Using the above device, sharply cut the long wavelength component of 620 nm or more of the image exposure wavelength using a dichroic mirror (manufactured by Kotai Kogaku Co., Ltd.), and reduce the surface potential from 500 V to 250 ■. The amount of exposure required to reduce the amount of light by half. (The exposure amount was measured using a 550-1 light meter (manufactured by EGandG)) The results are summarized in FIG. 7. These results show that if a photoreceptor is prepared according to the present invention, a photoreceptor with excellent performance for electrophotography can be obtained.

[Brief explanation of drawings]

1 to 7 show examples of the present invention, in which FIG. 1 is a y-sectional view of an a-3i photoreceptor, and FIG. 2 is an a-3i photoreceptor.
A graph showing the optical energy gap of iC, Fig. 3 a graph showing the specific resistance of a-3iC, Fig. 4 a schematic cross-sectional view of the glow discharge device, Fig. 5 a table showing the layer structure of each photoreceptor, FIG. 6 is a schematic diagram of a scratch strength tester, and FIG. 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39...a-3i photoreceptor 41...support (substrate) 42...charge transport layer 43...charge generation layer 44... . . . Charge blocking layer 45 . . . Surface modification layer 46 . . . Intermediate layer. Agent Patent Attorney Hiroshi Aisaka Figure 2 o-5i1-xCx:Hx Figure 3 SFJ skint (0↑omicc/l) Figure 6 Figure 4 Figure 7

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon heavily doped with a Group IIIa element of the periodic table and containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; nitrogen atoms and oxygen atoms; a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon containing; a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; doped with an element of group IIIa or group Va of the periodic table and containing carbon; an intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms and oxygen atoms; at least one of carbon atoms, nitrogen atoms and oxygen atoms from the intermediate layer; A photoreceptor in which surface-modified layers made of amorphous hydrogenated and/or fluorinated silicon containing a large amount of silicon are sequentially laminated.