JPS61183657A - Photosensitive body - Google Patents

Abstract

PURPOSE:To enhance printing resistance of the surface layer of a photosensitive body by forming an interlayer contg. at least 2 of C, N, and O between an electrostatic charge generating layer made of amorphous silicon hydride (a-Si:H) and a modified surface layer made of a-SiC:H. CONSTITUTION:The charge transfer layer 42 made of a-SiC:H and the charge generating layer 43 made of a-Si:H, and further, the interlayer 46 made of a-Si contg. at least 2 of C, N, and O, and the modified surface layer 45 made of a-SiC:H, contg. C in an amt. of about >50% of (Si+C), are laminated in this order on a conductive substrate 41, thus the permitting printing resistance and the mechanical damage resistance of the surface layer of the photosensitive layer to be enhanced, image quality to be prevented from deterioration due to white striations, etc., and characteristics to be stabilized.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a photoreceptor, such as an electrophotographic photoreceptor.

Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or As S
Photoreceptor doped with Te SSb etc., ZnO゛ or CdS
Photoreceptors, etc., in which the compound is dispersed in a resin binder are known. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength.

On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as a matrix have been proposed in recent years.

a-3i has a so-called dangling bond in which the bond of Si-5i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, the dangling bonds are filled by compensating the defects with hydrogen atoms (H) and bonding H to St.

Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) has a resistivity in the dark of 10” to 109
Ω-G, which is about 1/10,000 times lower than amorphous Se. Therefore, a photoreceptor made of a single layer of a-5i:H has problems in that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor.

Figure 10 shows a-3 with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating an i-type photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3, an optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflection mirror 6 is provided so as to be movable in a straight line in the left and right direction of the drawing. A second mirror unit 20 for making the optical path length constant moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 and is reflected as an image carrier. The light is incident on the photosensitive drum 9 in the form of a slit. A corona charger 10 is installed around the drum 9.
, a developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper box 15 via each paper feed roller 16 and 17 is transferred to the drum 9.
After the toner image is transferred, it is further fixed in the fixing section 19, and then the paper is discharged to the tray 35. In the fixing section 19, the developed copy paper is passed between a heating roller 23 having a built-in heater 22 and a pressure roller 24 to perform a fixing operation.

However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter referred to as a-5iC:H
It is called. ), its manufacturing method and existence are “Ph1l.

Mag, Vol. 35" (1978), etc., and its characteristics include high heat resistance and surface hardness, and a high dark resistivity (10" to 10") compared to a-3i:H.
1013Ω-CI11), and that the optical energy gap changes over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon.

An electrophotographic photoreceptor combining such a-3iC:H and a-5i:H has been proposed, for example, in Japanese Patent Laid-Open No. 127083/1983. According to this, a-3i:H
The layer is a charge generation (photoconductive) layer, and below this charge generation layer is a
-3iCsH layer is provided, the upper layer a-3t:H provides photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forming a heterojunction with the a-3i:l (layer) reduces the charging potential. However, the dark decay of the a-3t:H layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
: The presence of the H layer causes poor chemical stability, mechanical strength, heat resistance, etc.

On the other hand, JP-A-57-17952 discloses a-3t:
A first a-3iCsH layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-3iCsH layer is formed on the back surface (support electrode side).
A-3iCsH layer is formed.

In addition, as related to this known technology, Japanese Patent Application Laid-Open No. 57
As seen in Japanese Patent No. 23543, a gradient layer (a-3i l-11cX:H) is provided between the charge generation layer and the first and second a-5iC:H layers, and the gradient layer , set X=O on the a-3isH side, and a-3iC
A photoreceptor in which x=0.5 on the sH layer side is known.

However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so great, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. Furthermore, light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the use environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer.

The purpose of the present invention is to improve the rigidity of the surface layer of a photoreceptor, making it resistant to mechanical damage, preventing image deterioration due to the occurrence of white streaks, and further improving resistance to light fatigue, image blurring, and stabilizing characteristics. The object of the present invention is to provide a photoreceptor with improved properties, adhesive strength, etc.

21 Structure of the invention and its effects, that is, the photoreceptor according to the present invention has a surface modified layer made of amorphous hydrogenated and/or fluorinated silicon carbide on a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon. layer, and a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided below the charge generation layer, between the charge generation layer and the surface modification layer. characterized in that an amorphous silicon-based intermediate layer containing at least two of carbon atoms, nitrogen atoms, and oxygen atoms is provided, and the surface modified layer has a sufficiently high carbon atom content. That is.

According to the present invention, since the carbon atom content of the surface modified layer is sufficiently high, it is resistant to mechanical damage, does not deteriorate image quality due to white streaks, etc., and has excellent rigidity resistance. becomes. In order to fully exhibit the effect of this surface modified layer, the surface modified layer should be a −S i , −, c,
When expressed as X≧0.5 (-50atomic
%: Hereinafter, aton+ic% will be simply expressed as "%". )
It is desirable that 0.5≦X≦0.8, and particularly preferably 0.55≦X≦0.7.

Further, in the present invention, since the above-mentioned intermediate layer is provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. This intermediate layer consists of amorphous hydrogenated and/or fluorinated CNs
It consists of CO1 S i No and S i CNO. The (C+N+O) content of this intermediate layer is 30% when the total number of atoms of St, C, N, and O is taken as 100%.
It is desirable that the content is between 50% and 40% to 50%. This (C+N+O) content is desirably lower than the C content of the surface modified layer.

Note that this intermediate layer has two or more layers, and among these, the content of (C+N+O) in the intermediate layer on the surface-modified layer side is preferably higher than that in the intermediate layer on the charge generation layer side.

As described above, the photoreceptor according to the present invention has a surface-modified layer with a sufficiently high C content and at least one of C, N, and O. Since the a-3t intermediate layer containing seeds is provided on the charge generation layer,
In addition to the above, it has been confirmed that it has excellent resistance to light fatigue during repeated use, has no image blurring, and has stable electrical and optical properties at all times and is unaffected by the environment in which it is used.

E, Example Hereinafter, the present invention will be described in detail with reference to examples.

FIG. 1 shows an a-3t electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is Af
On a drum-shaped conductive support substrate 41 such as
Group elements (e.g. boron) doped a-S
A P wall charge blocking layer 44 made of iC:H, a charge transport layer 42 made of a-SiC:H lightly doped with an element of group 111a of the periodic table (for example, boron), and a-3
i: A charge generation layer (photoconductive layer) 43 made of H, and (C+
an intermediate layer 46 made of amorphous hydrogenated silicon having a carbon atom content of 50% or less (for example, 40%); and an amorphous hydrogenated silicon carbide (a 5ll- The photoconductive layer 43 has a dark resistivity ρ.

The ratio of resistivity ρ when irradiated with light is sufficiently large as an electrophotographic photoreceptor, and the photosensitivity (particularly to light in the visible and infrared regions) is good.

In this photoreceptor 39, based on the present invention, the surface modified layer 45 on the charge generation layer 43 contains carbon in an amount of 50% or more based on the total number of atoms of Si and C. , the (C+N+○) content is 50% or less, and C,N
and a-3t type intermediate layer 4 containing at least two types of 0
There are 6.

The photoreceptor having the above structure is of a functionally separated type for positive charging, but it can be modified to be for negative charging. In this case, the charge blocking layer 44 is a group Va element of the periodic table (
For example, the charge transport layer 42 may be heavily doped with phosphorus (for example, phosphorus), the same layer may be made into N-type, or even N-type, and the charge transport layer 42 may not be lightly doped with elements of Group Ma of the periodic table (for example, boron).

Alternatively, as shown in FIG. 2, the charge blocking layer 44 may not be provided, or as shown in FIG.
It is preferable that the (C+N+O) content of layer 6b is higher than that of layer 46a (for example, 50% for the former and 40% for the latter). When the intermediate layer is formed of a plurality of layers in this manner, the effects of the present invention can be more fully exhibited.

In addition, the carbon atom content of the above a-3iC:H layer is 0 to
In the 70% range, there is a nearly linear relationship with the optical energy gear knob (Eg, opt) as shown in Figure 4, so it is possible to define the carbon atom content by replacing it with the optical energy gap. can. a-3iCO:H
The energy gap also changes depending on the amount of Co.

Also, a-3iC:HSa-3iNO:H, a-3iC
O:H is a carbon atom, and if the N01CO content is appropriately selected, the specific resistance increases as shown by curves a, b, and c in Figure 5.
A remarkable effect of improving the charging potential holding ability can be obtained. That is, for example, when using a-3iC:H with a carbon atom content of 50 to 80%, as shown by curve a in FIG.
Its resistivity varies according to the carbon content and IQItΩ−
It becomes more than ro. Therefore, as mentioned above, the carbon atom content of the surface modified layer is set to 0.5≦X≦0.8, and the (C
+N+O) content is 0.3≦y≦0.5, the specific resistance of both layers can be maintained sufficiently large.

FIG. 6 shows the optical energy gap of a-3iNO:H, and the gap is sufficiently large when the (N+O) content is 30 to 50%.

In addition, the above-mentioned intermediate layer is a S i +-y (No) y
: aS iI-*(Co)g- in place of H:
Form it with H< (Z is preferably 0.3 ≦Z≦
0.5), or the three elements N10 and C may be contained at the same time.

The a-SiC:8 layer 45 described above is indispensable for modifying the surface of the photoreceptor and making the a-Si photoreceptor practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. Also, a-
Since the 3iC:8 layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so it can be used in processes that apply heat such as adhesive transfer. can.

In order to achieve the above excellent effects comprehensively, a
-3iC: 8 It is important to select the carbon composition of the layer 45. That is, the carbon atom content is Si + C = 100%
It is desirable that it be 50 to 80%. It is desirable for the C content to be 50% or more for the reasons mentioned above, the above-mentioned specific resistance will be the desired value, and the optical energy gap will be approximately 2.5 eV or more, so that the so-called The optically transparent window effect makes it easier for the irradiated light to reach the a-3i:H layer (charge generation layer) 43. However, if the C content is less than 50%, defects such as mechanical damage are likely to occur, the specific resistance is likely to be less than a desired value, and a portion of the light is absorbed by the surface layer 45, reducing the photosensitivity of the photoreceptor. It becomes easier to decrease. Furthermore, if the C content exceeds 80%, the amount of carbon in the layer increases, which tends to cause loss of semiconductor properties and also tends to reduce the deposition rate when forming the a-3iC:H film by glow discharge method. , C content is preferably 80% or less.

Also, the film thickness of a-3iC: 8 layers 45 is 400 people≦t≦5
It is also important to select within the range of 000 people (especially 400 people≦t<2000 people). That is, the film thickness is 5000
If it exceeds that of humans, the residual potential V becomes too high and the photosensitivity decreases, making it easy to lose the good characteristics of the a-3t system. Furthermore, if the film thickness is less than 400 layers, the tunnel effect prevents charges from being charged on the surface, resulting in an increase in dark decay and a decrease in photosensitivity.

(C+N+0) of the intermediate layer 46 (and further 46a, 46b)
The content is desirably 50% or less for the above-mentioned reasons, and desirably 30% or more to improve properties such as resistivity while maintaining adhesion to the charge generation layer 43.

The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor.

In addition, in order to sufficiently prevent the injection of electrons from the substrate 41, the charge blocking layer 44 is made of an element of group Ma of the periodic table (for example, boron) at a flow rate ratio of B z Hb/S i Ha=
It is preferable to dope the material to a capacitance of 100 to 5000 ppm by glow discharge decomposition to make it P type (or even P° type).

Further, the amount of impurity doped into the charge transport layer 42 is determined by the flow rate ratio of B
It is preferable that 2H4/S i H4 = 2 to 10 capacitance pprrr. When using a negatively charged photoreceptor, the impurity doped into the blocking layer is, for example, a flow rate ratio of PH3/S.
It may be doped by glow discharge decomposition with i Ha = 100-1000 ppm by volume.

Further, the charge generation N42 is 4 to 8 μm, preferably 5 to 7 μm.
It is preferable to set it to μm. If the thickness of the charge generation layer 43 is less than 4 μm, the photosensitivity will not be sufficient, and if it exceeds 8 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 has 1
The thickness is preferably 0 to 30 μm. The blocking layer 44 is 5
If the number is less than 00, the blocking effect will be weak, and if the number is less than 2μ
If it exceeds m, the charge transport ability tends to deteriorate.

Note that each of the above layers needs to contain hydrogen.

In particular, the hydrogen content in the photoconductive layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification 145, blocking layer 44, and charge transport layer 42. Further, as an impurity for controlling the conductivity type of the blocking layer 44,
In addition to boron, A1, Ga % I are used to make it P-type.
An element of group Ma of the periodic table, such as n % T 1, can be used.

In addition to phosphorus, a Group Va element of the periodic table, such as As % Sb, can be used for N-type formation.

Note that the charge transport layer 42 and the charge blocking layer 44
The carbon content of is preferably 5 to 30%, preferably 10 to 20%.

Next, a method for manufacturing the above-mentioned photoreceptor (eg, drum-shaped) and an apparatus therefor (glow discharge apparatus) shown in FIG. 7 will be explained.

A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of S i H4 or a gaseous silicon compound, 63 is a supply source of 0□ or a gaseous oxygen compound, and 64
is a hydrocarbon gas such as CH, or N Hx 1. 65 is a carrier gas supply source such as Ar, 66 is an impurity gas (for example, BzH6) supply source, and 67 is each flow meter. In this glow discharge device, first, the surface of a support, for example, an AI substrate 41, is cleaned and then placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is adjusted to 10-6 Torr and then evacuated. At the same time, the substrate 41 is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C). Then, using a high purity inert gas as a carrier gas, Si H4 or a gaseous silicon compound, CH, (or NH3, N2
), O□ are appropriately introduced into the vacuum chamber 52, for example, 0.0
A high frequency voltage (for example, 13.56 MHz) is applied by a high frequency power supply 56 under a reaction pressure of 1 to 1 QTorr. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and P-type a-3iC:H, a-3i
C: H, a-3i: H, C, N% At least 2 of O
The species containing aSi:H, a-3iC:H are deposited successively (i.e. corresponding to the example of FIG. 1, for example) on the substrate as the above-mentioned layer 44. .

In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. .

In addition, when forming each layer of the above a-3i photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of SiF4 or the like instead of the above-mentioned H or in combination with H, and a Si: F 5a-3i:H:F,
a-3iN:F, a-3iN:H:F, a-3iC:F
, a-3iC:H:Fsa-3iCN:F, a-3iN
O:FSa-3iCO:F etc. can also be used. In this case, the fecal content is preferably 0.5 to 10%.

The above manufacturing method is based on the glow discharge decomposition method, but there are also methods such as sputtering method, ion blating method, and method of evaporating St while introducing activated or ionized hydrogen in a hydrogen discharge tube. (In particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) filed by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455).

Hereinafter, the present invention will be described with reference to specific examples.

By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured.

That is, first, after cleaning the surface of a support, for example, a drum-shaped Aβ substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 shown in FIG.
Torr, and exhaust the air, and keep the substrate 41 at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 350°C).
Heat and maintain at 300°C. Next, high-purity Ar gas was introduced as a carrier gas, high-frequency power with a frequency of 13.56 MHz was applied under a back pressure of 0.5 Torr, and preliminary discharge was performed for 10 minutes.

Next, a reaction gas consisting of SiH4, CH4, and BtH6 was introduced, and the flow rate ratio was 1:1:1:(1,
5X1O-3) of (Ar + Si H4+ CHa
+ BzHh) P-type a-3iC that takes charge blocking function by decomposing mixed gas by glow discharge:
8 layers 44 were deposited, then BgH for S i H4
The charge transport layer 42 was sequentially formed to a predetermined thickness at a deposition rate of 6 μm with a flow rate ratio of 1:6 Xl0-'. Subsequently, the supply of B z Hb and CH, was stopped, and S t
Hs was decomposed by discharge to form an a-3t:H layer 43 of a predetermined thickness. Subsequently, (Ar+S+
CH4, NZ or 0□) mixed gas is decomposed by glow discharge,
An intermediate layer 46 of a predetermined thickness is formed, and the flow rate ratio is 4:1:1.
A-3iC:H surface protective layer 45 is formed by glow discharge decomposition of (Ar + S i Ha + CHa) mixed gas of 0
Further, an electrophotographic photoreceptor was completed.

The structure of the photoreceptor thus produced was summarized as follows.

(3), a-3i: H charge generation N: Film thickness = 5 μm (bleeding,
a-3iC:H charge transport layer: Film thickness = 14 μm Carbon content = 12 atomic% /h lH4(5), a-5iC:H charge pro-7king N: Film thickness = 1 μm Carbon content = 12 atomic% /h Glow discharge decomposition (PH3) / (S i Ha ) = 500 vol ppm (
6) Support: A1 cylinder (mirror polished finish) Next, various tests were conducted using each of the above photoreceptors.

As shown in Figure 9, the 0,
A load W is applied to the 3R diamond needle 70, and the photoreceptor is moved by the motor 71.
Rotate it with and scratch it. Next, the electrophotographic copying machine U-B
An image is produced using a modified machine called ix1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image.

After acclimatizing the photoconductor in a modified electrophotographic copying machine U-Bix4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with a temperature of 33°C and a relative humidity of 80%, the developer, paper, and blade were removed. After making 1000 copies without contact,
Images were taken and the degree of image blurring was determined based on the following criteria.

◎There is no image blurring at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good.

○: 5.5 point alphabetic characters are slightly thicker.

△: 5.5 point letters are crushed and difficult to read.

X: 5.5 points of unreadable letters.

Potential measurement using a modified Hidome Denritsu VR(v) U-Bix 1600,
The surface potential of the photoreceptor that remains even after being irradiated with 301 ux-sec of static eliminating light having a peak at 400 nm.

20 Image quality at the time of copying 02 There are no white lines or white spots on the image, and the resolution and gradation are good and clear.

○: White lines and blurring due to image blurring occur only in a small portion of the image.

Δ: White streaks and white spots partially occur on the image.

Some parts of the text are difficult to read due to the image flow.

×: White lines, white spots, and image blurring occur throughout the image.

The results are summarized in Figure 8. Including this result, the following was clarified.

(1) When both the intermediate layer and the surface modification layer are absent: The scratch strength in the scratch strength test is weak, the photoreceptor is susceptible to mechanical damage, and white streaks etc. occur on the image. Also,
This causes image blurring and blurring of the image. Therefore, the rigidity resistance is extremely low.

(2) In case of no intermediate layer, a-3iC:H surface modified layer (thickness = 1500 layers): Scratch strength and image deletion prevention valve were insufficient, and printing durability was low.

(3), no intermediate layer, a SiC:H surface modified layer ([
C] = 60 at, %): Insufficient scratch strength, insufficient prevention of image deletion, residual potential increases with film thickness.

(4), a-5iC:H intermediate 11 ((C+N+O)
=30-50at0%) and a-3iC:H surface modified layer (
Lamination of (C) = 50 to 80 at, %): Scratch strength is improved, image deletion does not occur, and high quality images can be obtained after several tens of blade copies (high rigidity resistance).

(5) When the thickness of the a-3iC:H intermediate layer and the a-3iC:H surface-modified layer is thin, the scratch strength tends to be weak and the effect of preventing image blurring tends to be reduced. Moreover, if the film thickness is too thick, the residual potential tends to increase.

[Brief explanation of the drawing]

1 to 9 show examples of the present invention. FIGS. 1, 2, and 3 are cross-sectional views of a-3t-based nausea, and FIG. 4 is a-3iC. Figure 5 is a graph showing the specific resistance of a-3iC, etc., Figure 6 is a graph showing the optical energy gap of B-3iNO, etc., Figure 7 is a graph of the glow discharge device. A schematic cross-sectional view, FIG. 8 is a table showing a comparison of the layer structure and characteristics of each photoreceptor, and FIG. 9 is a schematic diagram of a scratch strength tester. FIG. 10 is a schematic cross-sectional view of a conventional electrophotographic copying machine. In addition, in the reference numerals shown in the drawings, 39-------.
-----------1 support (substrate) 42--1-
−−−−−・−Charge transport layer 43・−・−・−Charge generation layer 44−・−・−−−−−・Charge blocking layer 45−
・−・−−−−・−・Surface modified layer 46.46a, 46
b---------Intermediate layer 55・---11---
--------Heater 56・------------・−・−High frequency power supply 57−・−・−・−・−・Electrodes 62 to 66−・−−−1−・・・−・−・Each gas supply source. Agent Patent Attorney Hiroshi Aisaka Figure 2 Figure 4 r! Element, NO'2cmICot abundance (OtOmiC%)
Figure 6 a-5h-Glance (No) $:H

Claims (1)

[Claims] 1 A surface modified layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided on the charge generation layer made of amorphous hydrogenated and/or fluorinated silicon,
In the photoreceptor in which a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided below the charge generation layer, carbon atoms and A photoreceptor comprising an amorphous silicon intermediate layer containing at least two of nitrogen atoms and oxygen atoms, and wherein the surface modified layer has a sufficiently high carbon atom content.