JPS61183656A - Photosensitive body - Google Patents

Abstract

PURPOSE:To enhance printing resistance and to prevent deterioration of image quality by forming an interlayer made of a-SiN:H between an electrostatic charge generating layer made of amorphous silicon hydride (a-Si:H) and a modified surface layer made of a-SiC:H. CONSTITUTION:The charge transfer layer 42 made of a-SiC:H and the charge generating layer 42 made of a-Si:H, and further, the interlayer 46 made of a-SiN:H or a-SiO:H, and the modified surface layer 45 made of a-SiC:H, contg. C in an amt. of about >50% of (Si+C), are laminated in this order on a conductive substrate 41, thus the permitting printing resistance and the mechanical damage resistance of the surface layer of the photosensitive layer to be enhanced, image quality to be prevented from deterioration due to white striations, etc., and characteristics to be stabilized.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a photoreceptor, such as an electrophotographic photoreceptor.

Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or As in Se,
Photoreceptors doped with Te, Sb, etc., photoreceptors in which ZnO or CdS is dispersed in a resin binder, and the like are known.

However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength.

On the other hand, electrophotographic photoreceptors using amorphous silicon (a-3i) as a matrix have been proposed in recent years.

a-3i has a so-called dangling bond in which the bond of Si-3i is broken, and many localized levels exist within the energy gap due to this defect. For this reason, hopping conduction of thermally excited carriers occurs, resulting in a small dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, by compensating for the above defects with hydrogen atoms (H) and bonding H to Si,
Filling of dangling bonds is performed.

Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called i:H. ) resistivity in the dark is 10 days to 109
Ω-am, which is about 1 compared to amorphous Se.
It's even lower than 1/10,000. Therefore, a photoreceptor made of a single layer of a-3i:H has the problem that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor.

Figure 10 shows a-3 with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating an i-type photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3, an optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflection mirror 6 is provided so as to be movable in a straight line in the left and right direction of the drawing. A second mirror unit 20 for making the optical path length constant moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 and is reflected as an image carrier. The light is incident on the photosensitive drum 9 in the form of a slit. A corona charger 10 is installed around the drum 9.
, a developing device 11, a transfer section 12, a separating section 13, and a cleaning section] 4 are arranged, and the copy paper 18 fed from the paper feed box 15 via the respective paper feed rollers 16 and 17 is transferred to the drum 9.
After the toner image is transferred, it is further fixed in the fixing section 19, and then the paper is discharged to the tray 35. In the fixing section 19, the developed copy paper is passed between a heating roller 23 having a built-in heater 22 and a pressure roller 24 to perform a fixing operation.

However, photoreceptors with a-3t:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere and moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-SiC:H
It is called. ), its manufacturing method and existence are “Ph1l.

Mag, Vol. 35" (1978), etc., and its characteristics include high heat resistance and surface hardness, and a high dark resistivity (10") compared to a-3t:H.
It is known that the optical energy gap changes over the range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon.

An electrophotographic photoreceptor combining such a-3ic:H and a-3i:H has been proposed, for example, in Japanese Patent Laid-Open No. 127083/1983. According to this, a-3isH
The layer is a charge generation (photoconductive) layer, and below this charge generation layer is a
-3iC8:H layer is provided, the upper layer a-3i:H obtains photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forming a heterojunction with the a-3t:H layer has a charging potential. We are working to improve this. However, the dark decay of the a-5i:H layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
: The presence of the H layer causes poor chemical stability, mechanical strength, heat resistance, etc.

On the other hand, JP-A-57-17952 discloses a-3i:
A first a-3iCsH layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-3iCsH layer is formed on the back surface (support electrode side).
A-5iCsH layer is formed.

In addition, as related to this known technology, Japanese Patent Application Laid-Open No. 57
As seen in Japanese Patent No. 23543, a gradient layer (a-3i 1-XCX:H) is provided between the charge generation layer and the first and second a-3iC:H layers, and the gradient layer In a-3i:H side, set X=O, a-3iCs
A photoreceptor in which x=0.5 on the H layer side is known.

However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so great, especially in continuous repeated use. In other words, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor printing durability. is not enough. Furthermore, light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the use environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer.

C1 Purpose of the Invention The purpose of the present invention is to improve the rigidity of the surface layer of a photoreceptor, making it resistant to mechanical damage, preventing image deterioration due to the occurrence of white streaks, and further stabilizing light fatigue, image blurring, and characteristics. The object of the present invention is to provide a photoreceptor with improved properties, adhesive strength, etc.

21 Structure of the invention and its effects, that is, the photoreceptor according to the present invention has a surface modified layer made of amorphous hydrogenated and/or fluorinated silicon carbide on a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon. layer, and a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided below the charge generation layer, between the charge generation layer and the surface modification layer. is characterized in that an intermediate layer consisting of amorphous hydrogenated and/or fluorinated nitrided and/or silicon oxide is provided, and the surface modified layer has a sufficiently high carbon atom content. .

According to the present invention, since the carbon atom content of the surface modified layer is sufficiently high, it is resistant to mechanical damage, does not deteriorate image quality due to white streaks, etc., and has excellent rigidity resistance. becomes. In order to fully exhibit the effect of this surface modified layer, the surface modified layer should be a -S i , -XcX
When expressed as X≧0.5 (=50aton+i
c%: Hereinafter, a tow i c% will be simply expressed as "%"), and it is more preferable that 0.5≦X≦0.8, especially 0.55≦X≦0. 7 is good.

Further, in the present invention, since the above-mentioned intermediate layer is provided between the surface modified layer and the charge generation layer, the adhesion between the surface modified layer and the charge generation layer is improved. This middle layer is a −S
When expressed as t+-yNy or a-S i , -,0°, it is preferable that y≦0.5, Z≦0.5, and more preferably 0.3≦7≦0.5.0. 3 ≦Z ≦0.5
In particular, it is preferable that 0.4≦y≦0.5.0.4≦2≦0.5. Further, the N or O content of this intermediate layer should be lower than the C content of the surface modified layer, that is, x>
It is desirable that y, x>z. This middle layer has N7i
) and O may be contained.

Note that this intermediate layer has two or more layers, and it is preferable that the nitrogen or oxygen atom content of the intermediate layer on the surface-modified layer side is higher than that of the intermediate layer on the charge generation layer side.

As described above, the photoreceptor according to the present invention has a surface-modified layer with a sufficiently high C content and an intermediate layer made of nitrided and/or oxidized a-3i on the charge generation layer, so that in addition to the above,
Excellent resistance to light fatigue during repeated use, and no image fading (,
It has been confirmed that the electrical and optical characteristics are always stable and are not affected by the usage environment.

E, Example Hereinafter, the present invention will be described in detail with reference to examples.

FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is an AI
A-3iC heavily doped with a group IV a element of the periodic table (for example, boron) is placed on a drum-shaped conductive support substrate 41 such as
: P wall charge blocking layer 44 made of H and a-
A charge transport layer 42 made of 3iC:H, a charge generation layer (photoconductive layer) 43 made of a-3i:H, and amorphous hydrogenated silicon nitride (a An intermediate layer 46 consisting of S t, I-, N, : H) and amorphous hydrogenated silicon carbide (a
Surface modified layer 45 consisting of s1I-XCX:H)
It has a laminated structure. The photoconductive layer 43 has a dark resistivity ρ. and resistivity ρ during light irradiation.

The ratio is sufficiently large as an electrophotographic photoreceptor, and the photosensitivity (particularly to light in the visible and infrared regions) is good.

In this photoreceptor 39, based on the present invention, the surface modified layer 45 on the charge generation layer 43 contains carbon in an amount of 50% or more based on the total number of atoms of Si and C. An intermediate layer 46 containing nitrogen atoms in an amount of 50% or less based on the total number of Si and N atoms is provided.

The photoreceptor having the above structure is of a functionally separated type for positive charging, but can be changed to be for negative charging. In this case, the charge blocking layer 44 is heavily doped with an element of Group Va of the periodic table (for example, phosphorus) to make the same layer N-type, and furthermore, N-type.
It is sufficient that the charge transport layer 42 is not lightly doped with an element of group Ma of the periodic table (for example, boron).

Further, as shown in FIG. 2, a structure may be adopted in which the charge blocking M44 is not provided, or as shown in FIG.
It is preferable that the nitrogen atom content of layer 6b is higher than that of layer 46a (eg, 50% for the former and 30% for the latter). When the intermediate layer is formed of a plurality of layers in this manner, the effects of the present invention can be more fully exhibited.

Note that the carbon atom content of the above a-3iCsH layer is 0 to
In the range of 70%, there is a nearly linear relationship with the optical energy gap (Eg, opt) as shown in FIG. 4, so the carbon atom content can be defined by replacing it with the optical energy gap.

Also, a-stc:I(Sa-5iN:H, a-3iO
: If the carbon, nitrogen, or oxygen atom content of H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in the charging potential holding ability can be obtained as shown by curves a, bSc in Fig. 5. . That is, for example, as shown by curve a in FIG. 5, when a-3iC:H with a carbon atom content of 50 to 80% is used, its specific resistance changes according to the carbon content, and is 1012Ω.
- Become more than ro. Therefore, as mentioned above, when the carbon atom content of the surface modified layer is 0.5≦X≦0.8 and the nitrogen atom content of the intermediate layer is 0.3≦y≦0.5, both The specific resistance of the layer can be kept sufficiently large.

Figure 6 shows the optical energy gap of a-3iN:H, and a-3iO:H.
At 50%, the gap is large enough.

Note that the intermediate layer may be formed of aSi+-*Oz :H instead of a-3iI-,N, :H (Z
is preferably 0.3≦Z≦0.5).

The a-SiC:H layer 45 described above is indispensable for modifying the surface of the photoreceptor and making the a-3i-based photoreceptor practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3i:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. Also, a-
3iC:) (Because the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning. Furthermore, it has good heat resistance, so it is suitable for applying heat-applying processes such as adhesive transfer. be able to.

In order to achieve the above excellent effects comprehensively, a
-3iC: It is important to select the carbon composition of the H layer 45. That is, it is desirable that the carbon atom content is 50 to 80% when Si+C=100%. It is desirable for the C content to be 50% or more for the reasons mentioned above,
The specific resistance described above becomes the desired value, the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is transmitted through the a-5i:6 layer (charged generation layer) 43 becomes easier to reach.

However, if the C content is less than 50%, defects such as mechanical damage tend to occur, and the specific resistance tends to fall below a desired value.
In addition, a portion of the light is absorbed by the surface layer 45, and the photosensitivity of the photoreceptor tends to decrease. Furthermore, if the C content exceeds 80%, the amount of carbon in the layer increases, which tends to cause loss of semiconductor properties and also tends to reduce the deposition rate when forming the a-3iC:H film by glow discharge method. , C content is preferably 80% or less.

In addition, the film thickness of the a-stc:H layer 45 is set to 400≦t≦5.
Within the range of 000 people (especially 400 people ≦t<2000 people)
It is also important to choose That is, the film thickness is 500
If it exceeds 0, the residual potential (18) becomes too much and the photosensitivity also decreases, making it easy to lose the good characteristics of the a-3i type photosensitive photosensitivity. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity.

The content of nitrogen or oxygen atoms in the intermediate layer 46 (furthermore, 46a, 46b) is desirably 50% or less for the reasons described above, and it is desirable to maintain adhesion with the charge generation layer 43 while maintaining properties such as specific resistance. In order to obtain good results, it is desirable to set it to 30% or more.

The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor.

Further, in order to sufficiently prevent the injection of electrons from the substrate 41, the charge blocking layer 44 is made of an element of group Ⅰa of the periodic table (for example, poron) at a flow rate ratio of B, H, /SiH.

= 100 to 5000 ppm, and doping is performed by glow discharge decomposition to make the P-type (or even P'-type).

Further, the amount of impurity doped into the charge transport layer 42 is determined by the flow rate ratio of B
zHi/S i Ha = 2~10 volume itppm
It is good to say. When using a negatively charged photoreceptor, the impurity doped into the blocking layer is, for example, at a flow rate ratio of PHs/
Doping may be performed by glow discharge decomposition with S i H4 = 100 to 1000 ppm.

Further, the charge generation layer 42 has a thickness of 4 to 8 μm, preferably 5 to 7 μm.
It is preferable to set it to μm. If the thickness of the charge generation layer 43 is less than 4 μm, the photosensitivity will not be sufficient, and if it exceeds 8 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 has 1
The thickness is preferably 0 to 30 μm. The blocking layer 44 is 5
If the number is less than 00, the profking effect will be weak, and if the number is less than 2 μ
If it exceeds m, the charge transport ability tends to deteriorate.

Note that each of the above layers needs to contain hydrogen.

In particular, the hydrogen content in the photoconductive layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification layer 45, blocking layer 44, and charge transport layer 42. Further, as an impurity for controlling the conductivity type of the blocking layer 44,
In addition to boron, klz Ga S In is used to make it P-type.
, Tji and the like can be used. In addition to phosphorus, a Group Va element of the periodic table, such as As % Sb, can be used for N-type formation.

Note that the charge transport layer 42 and the charge blocking layer 44
The carbon content of is preferably 5 to 30%, preferably 10 to 20%.

Next, a method for manufacturing the above-mentioned photoreceptor (eg, drum-shaped) and an apparatus therefor (glow discharge apparatus) shown in FIG. 7 will be explained.

A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of SiH4 or a gaseous silicon compound, 63 is a supply source of 02 or a gaseous oxygen compound, and 64 is a C
65 is a carrier gas supply source such as Ar, 66 is an impurity gas (for example, BzH6) supply source, 67
is each flowmeter. In this glow discharge device, first, the surface of a support, for example, an A1 substrate 41, is cleaned and then placed in a vacuum chamber 52, so that the gas pressure in the vacuum chamber 52 is 1.
The substrate 41 is heated to a predetermined temperature, particularly 100 to 350°C (preferably 100°C to 350°C).
50-300°C). Next, using a high purity inert gas as a carrier gas, 5iHa or a gaseous silicon compound, CH, (or NH3, N2), 0□ is appropriately introduced into the vacuum chamber 52, for example, at a pressure of 0.01 to 10 Torr.
A high frequency voltage (for example, 13.56 MHz) is applied by a high frequency power supply 56 under a reaction pressure of r. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41, and P-type a-3iC:H, a-3iC:H, a-
5i: H, a-3iN: H, or a-S iO:
HSaSiC: H in the above layer 44.42,
43, 46, 45 on the substrate successively (i.e. corresponding to the example of FIG. 1, for example).

In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3t layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. .

In addition, when forming the above a-Si photoreceptor photoreceptor,
In order to compensate for dangling bonds, fluorine is introduced in the form of SiF, etc. in place of the above-mentioned H or in combination with H, and a-si:F'SaS i: H: F S
aSiN: FsaSiN:
It can also be H:F, a-3iC:F, a-5iC:H:F. In this case, the amount of fluorine is preferably 0.5 to 10%.

The above manufacturing method is based on the glow discharge decomposition method, but there are also sputtering methods, ion blating methods, and methods in which Si is evaporated while introducing activated or ionized hydrogen in a hydrogen discharge tube. (In particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) filed by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455).

Hereinafter, the present invention will be described with reference to specific examples.

By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured.

That is, first, after cleaning the surface of a support, for example, a drum-shaped Al substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 in FIG. 7, and the gas pressure in the vacuum chamber 52 is set to 10-
hT orr and evacuate the substrate 4.
1 at a predetermined temperature, particularly 100 to 350°C (preferably 15°C
Heat and maintain at a temperature of 0 to 300°C. Next, high purity Ar
A gas was introduced as a carrier gas, and high frequency power with a frequency of 13.56 MHz was applied under a prepressure of 0.5 Torr to perform a preliminary discharge for 10 minutes.

Next, a reaction gas consisting of S i Ha, CH, and BzHa was introduced, and the flow rate ratio was 1:1:1:(
1,5X10-') of (Ar + S t Ha +
CHa + BzHi) By glow discharge decomposition of the mixed gas, P-type a-3i which takes charge profking function
C:H layer 44 is formed, then B t for SiH,
The charge transport layer 42 was sequentially formed to a predetermined thickness at a deposition rate of 6 μm/h with an Hb flow rate ratio of 1:6 Xl0-'. Subsequently, the supply of 8 g H6 and CHa was stopped, and S
s Ha is decomposed by discharge to form a-5i:H layer 4 of a predetermined thickness.
3 was formed. Subsequently, (Ar
+SiH4+N2 or 02) mixed gas is decomposed by glow discharge to form an intermediate layer 46 of a predetermined thickness, and the flow rate ratio is 4:
A 1:10 (Ar + Si H4 + CHa) mixed gas is decomposed by glow discharge to form a-3iC:H surface protective layer 45.
Further, an electrophotographic photoreceptor was completed.

The structure of the photoreceptor thus produced was summarized as follows.

(3), a-3i: H charge generation layer: film thickness = 5. czm(
4), a-3iC:H charge transport layer: film thickness = 14 μm carbon content = 12 atomic% (5), a-3iC:) (charge blocking layer: film thickness =
1 μm Carbon content = 12 atomic% By glow discharge decomposition method (PH:l) / (S i H4) = 500 vol ppn + (
6) Support: Al cylinder (mirror polished finish) Next, various tests were conducted using each of the photoreceptors described above.

■2 is 1 intensity As shown in Figure 9, 0,
3 Apply a load W to the R diamond needle 70, and move the photoreceptor to the motor 7.
Rotate it with 1 and make a scratch. Next, the electrophotographic copying machine U-
An image is generated using a modified Bix1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image.

After acclimatizing the photoconductor in a modified electrophotographic copying machine U-Biχ4500 (manufactured by Konishiroku Photo Industry Co., Ltd.) for 24 hours in an environment with an image flow temperature of 33°C and a relative humidity of 80%, the developer, paper, and blade were After making 1000 copies without contact,
Images were taken and the degree of image blurring was determined based on the following criteria.

◎There is no image blurring at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good.

○: 5.5 point alphabetic characters are slightly thicker.

Δ: 5.5 point letters are crushed and difficult to read.

X: 5.5 points of unreadable letters.

By measuring the electric potential using a modified U-Bix 1600 machine,
The surface potential of the photoreceptor that remains even after being irradiated with 301 ux-sec of static eliminating light having a peak at 400 nm.

There are no white lines or white spots on the 100◎2 image of the copy date, and the resolution and gradation are good and clear.

O: White streaks and blurring due to image blurring occur only in a small portion of the image.

△: White streaks and white spots partially occur on the image.

Some parts of the text are difficult to read due to the image flow.

×: White lines, white spots, and image blurring occur throughout the image.

The results are summarized in Figure 8. Including this result, the following was clarified.

(1) When both the intermediate layer and the surface modification layer are absent: The scratch strength in the scratch strength test is weak, the photoreceptor is susceptible to mechanical damage, and white streaks etc. occur on the image. Also,
This causes image blurring and blurring of the image. Therefore, the rigidity resistance is extremely low.

(2) In case of no intermediate layer, a-3iC:H surface modified layer (thickness = too much): Both scratch strength and image fading prevention are insufficient, and rigidity resistance is low.

(3), no intermediate layer, a-SiC:H surface modified layer ([C
] = 60 at, %): Insufficient scratch strength, insufficient prevention of image deletion, residual potential increases with film thickness.

(4), a-3iC:H intermediate layer ((N) = 30-50
at.

%) and a-3iC:H surface modified layer ((C]=50~80
At, %) lamination: Scratch strength is improved, image deletion does not occur, and hundreds of thousands of copies of high-quality images can be obtained (high rigidity resistance).

(5) When the thickness of the a-3jC:H intermediate layer and the a-3iC:H surface modified layer is thin, the scratch strength tends to be weak and the effect of preventing image blurring tends to be reduced. If it is too high, the residual potential tends to increase.

[Brief explanation of drawings]

1 to 9 show examples of the present invention. FIGS. 1, 2, and 3 are cross-sectional views of an a-3t photoreceptor, and FIG. 4 is an a-SiC photoreceptor. Figure 5 is a graph showing the specific resistance of a-3iC, etc., Figure 6 is a graph showing the optical energy gap of a-3iN, etc., Figure 7 is a schematic diagram of the glow discharge device. A sectional view, FIG. 8 is a table showing a comparison of the layer structure and characteristics of each photoreceptor, and FIG. 9 is a schematic diagram of a scratch strength tester. FIG. 10 is a schematic cross-sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39・----1・---m=-・a-3i system photoreceptor 4
1-------------...Support substrate) 42-
-----------Charge transport layer 43-----
・・−−−1 charge generation layer 44・−−−−−−
----Charge blocking layer 45-----
...Surface modified layer 46.46a, 46b---
--- Intermediate layer 55 --- Heater 56 --- High frequency power source 57 --- Electrodes 62 to 66 --- One --- -Each gas supply source. Agent Patent Attorney Hiroshi Aisaka Figure 4 a-5i+-xCx: HA Figure 5 Carbon, Nitrogen 1 hour tit (atomic%) Figure 6

Claims (1)

[Claims] 1 A surface modified layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided on the charge generation layer made of amorphous hydrogenated and/or fluorinated silicon,
and a photoreceptor in which a charge transport layer made of amorphous hydrogenated and/or fluorinated silicon carbide is provided below the charge generation layer, wherein an amorphous hydrogenated and/or charge transport layer is provided between the charge generation layer and the surface modified layer. and/or an intermediate layer consisting of fluorinated nitride and/or silicon oxide is provided,
A photoreceptor characterized in that the surface modified layer has a sufficiently high carbon atom content.