JPS6228756A - Photosensitive body - Google Patents

Abstract

PURPOSE:To improve the mechanical and the optical properties and the stability of the titled body by laminating the prescribed layers composed of such as a specific amorphous hydrogenated silicon (a-Si:H) etc. respectively. CONSTITUTION:An electric charge blocking layer 44 composed of a-Si:H contg. at least one kind atom selected from a carbon, a nitrogen, and an oxygen atoms, an electric charge transfer layer 42 composed of a-Si:H contg. the nitrogen and the oxygen atoms and an electric charge generating layer 43 composed of a-Si:H are laminated on a substrate 41. And the intermediate layer 46 composed of a-Si:H contg. at least one kind atom selected from the carbon, the nitrogen and the oxygen atoms and dopped with the group IIIa or Va element of the periodic table, and the surface reforming layer 45 composed of a-Si:H contg. large amounts of the atom are laminated on the substrate 41 to form the photosensitive body 39. By providing the layers 45 and 46, the mechanical strength of the titled body becomes large. The adhesive property, the anti-fatigue property against a light and the anti-chemical stability of the layers 45 and 43 are improved. The effects as prescribed above are obtd. by merely using a fluorinated silicon or by jointly using the fluorinated silicon and the prescribed silicon.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a photoreceptor, such as an electrophotographic photoreceptor. Conventional technology Conventionally, as an electrophotographic photoreceptor, Se or As% in Se is used.
Photoreceptor doped with Te % Sb etc., ZnO or Cd
Photoreceptors, etc. in which S is dispersed in a resin binder are known. However, these photoreceptors have problems in terms of environmental pollution, thermal stability, and mechanical strength. On the other hand, amorphous silicon (a-S i)
In recent years, electrophotographic photoreceptors have been proposed. a-3i has a so-called dangling bond in which the bond of 5i-3t is broken, and many localized levels exist in the energy gear due to this defect. For this reason, hopping propagation of thermally excited carriers occurs, resulting in low dark resistance, and photoexcited carriers are trapped in localized levels, resulting in poor photoconductivity. Therefore, the dangling bonds are filled by compensating the defects with hydrogen atoms (H) and bonding H to Si. Such amorphous hydrogenated silicon (hereinafter referred to as a-3
It is called t:H. ) has a resistivity in the dark of 108 to 10
qΩ-cm, which is about 1/10,000 times lower than that of amorphous Se. Therefore, a photoreceptor made of a single layer of a-3i:H has problems in that the dark decay rate of the surface potential is high and the initial charging potential is low. However, on the other hand, when irradiated with light in the visible and infrared regions, the resistivity is greatly reduced, so it has extremely excellent properties as a photosensitive layer of a photoreceptor. Figure 8 shows a-3i with the above a-3i:H as the base material.
An electrophotographic copying machine incorporating a system photoreceptor 9 is shown. According to this copying machine, a glass document mounting table 3 on which a document 2 is placed and a platen cover 4 that covers the document 2 are disposed in the upper part of a cabinet 1. Below the document table 3,
An optical scanning table consisting of a first mirror unit 7 equipped with a light source 5 and a first reflecting mirror 6 is provided so as to be movable linearly in the left-right direction of the drawing, and the optical path length between the document scanning point and the photoreceptor is kept constant. The second mirror unit 20 moves according to the speed of the first mirror unit, and the reflected light from the document table 3 passes through the lens 21 and the reflection mirror 8 onto the photosensitive drum 9 as an image carrier. The light enters in a slit shape. Around the drum 9, a corona charger 10,
A developing device 11, a transfer section 12, a separation section 13, and a cleaning section 14 are arranged, and the copy paper 18 fed from the paper feed box 15 via each paper feed roller 16, 17 is further processed after the toner image on the drum 9 is transferred. The image is fixed by the fixing unit 19 and then ejected to the tray 35. In the fixing section 19, the developed copy paper is passed between a heating roller 23 containing a heater 22 and a pressure roller 24 to perform a fixing operation. However, photoreceptors with a-3i:H surfaces are susceptible to surface chemical stability, such as the effects of long-term exposure to the atmosphere or moisture, and the effects of chemical species generated by corona discharge. , has not been sufficiently investigated so far. For example, items that have been left for more than a month will be affected by moisture.
It is known that the receptor potential is significantly reduced. On the other hand, amorphous hydrogenated silicon carbide (hereinafter a-3iC:H
It is called. ), its manufacturing method and existence are described in “Ph1l. Dark resistivity (10”~1
It is known that the optical energy gap changes over a range of 1.6 to 2.8 eV depending on the amount of carbon. However, there is a drawback that the long wavelength sensitivity becomes poor due to the widening of the band gap due to the inclusion of carbon. An electrophotographic photoreceptor combining such a-3iC:H and a-3i:H has been proposed, for example, in Japanese Patent Application Laid-Open No. 127083/1983. According to this, a-3t:8
The layer is a charge generation (photoconductive) layer, and below this charge generation layer is a
-3iC: 8 layers are provided, the upper layer a-3t:H provides photosensitivity in a wide wavelength range, and the lower layer a-3iC:H forming a heterojunction with the a-3t:8 layer has a charging potential. We are working to improve this. However, the dark decay of the a-3i:8 layer cannot be sufficiently prevented, and the charging potential is still insufficient to be practical.
The presence of the H layer causes poor chemical stability, mechanical strength, heat resistance, etc. On the other hand, JP-A-57-17952 discloses a-3t:
A first a-3iC:8 layer is formed as a surface modification layer on the charge generation layer made of H, and a second a-3iC:8 layer is formed on the back surface (support electrode side).
a-3iC: 8 layers are formed. In addition, as related to this known technology,
As seen in Japanese Patent No. 23543, a gradient layer (a-Si+-x Cx:H) is provided between the charge generation layer and the first and second a, -3iC:8 layers, and the gradient layer In the layer a-3i: X = 0 on the H side, a
A photoreceptor in which X=0.5 on the SiC:H layer side is known. However, when the present inventor conducted a study on the above-mentioned known photoreceptor, it was found that the effect of providing the surface modification layer is not so pronounced, especially in continuous repeated use. That is, during continuous running of 200,000 to 300,000 times, the a-3iC layer on the surface is mechanically damaged after about 70,000 to 80,000 times, and this causes white streaks and white spots as image defects, resulting in poor rigidity. Not enough. Furthermore, light resistance fatigue occurs during repeated use, image blurring occurs, and the electrical and optical characteristics are not always stable, and the effects of the use environment (temperature, humidity) cannot be ignored. Furthermore, it is necessary to further improve the adhesion between the surface modified layer and the charge generation layer. The object of the present invention is to provide excellent adhesion between a surface modified layer and a charge generation layer, strong resistance to mechanical damage, and excellent rigidity resistance.
Stable image quality with no image blurring is obtained, there is little optical fatigue during repeated use (and the residual potential is low, and the characteristics are compatible with the usage environment (
The purpose of the present invention is to provide a photoreceptor that is stable regardless of temperature and humidity. 20 Structure of the invention and its effects, that is, the present invention provides a charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; and an amorphous hydrogenated and/or fluorine layer containing an oxygen atom; an intermediate layer made of hydrogenated and/or fluorinated silicon; an amorphous hydrogenated and/or
Alternatively, the present invention relates to a photoreceptor in which surface-modified layers made of fluorinated silicon are sequentially laminated. According to the present invention, since the surface modified layer contains at least one atom of carbon, nitrogen, and oxygen, it is resistant to mechanical damage, and there is no deterioration in image quality due to white streaks, etc., and it is resistant to It has excellent rigidity. Further, in the present invention, since the impurity-doped intermediate layer is provided between the surface modification layer and the charge generation layer, the adhesion between the surface number rt layer and the charge generation layer is improved. Furthermore, since the surface modification layer and intermediate layer are provided on the charge generation layer, in addition to the above, it has excellent resistance to light fatigue during repeated use, no image fading, low residual potential, and electrical resistance. It has been confirmed that the optical properties are always stable and unaffected by the usage environment. E. Examples Hereinafter, the present invention will be explained in detail with reference to examples. FIG. 1 shows an a-3i electrophotographic photoreceptor 39 for positive charging according to this embodiment. This photoreceptor 39 is A7
! On a drum-shaped conductive support substrate 41 such as
N consisting of a-3i:H (this is expressed as a5i(C)(N)(0):H) heavily doped with a group element (e.g. phosphorus) and containing at least one of C, N and 0. ''' type charge blocking 1144 and periodic table ma
a-3i:H (a-3
iNO: Represented as H. );
a-3i: A charge generation layer (without impurity doping or made intrinsic) 43 made of H, and a P type or N type heavily doped with an element of group Ma or group Va of the periodic table, and C , N, and 0, and an intermediate layer 46 made of amorphous hydrogenated silicon containing at least one of the following:
Amorphous hydrogenated silicon containing at least one of N, C, and O (or a-5t(C)(N))
(0): Represented as H. ) Surface modified layer 45 consisting of
It has a laminated structure. The charge generation layer 43 has a dark resistivity ρ. The ratio of resistivity ρ at the time of light irradiation is sufficiently large as an electrophotographic window light material, and the photosensitivity (particularly to light in the visible and infrared regions) is good. In addition, when the carbon atom content of each of the above layers is in the range of 0 to 70%, the optical energy gap (
Since there is a substantially linear relationship with Eg, opt), the carbon atom content can be defined by replacing it with the optical energy gap. In addition, if the carbon atom content of a-3iC:H is appropriately selected, remarkable effects such as an increase in specific resistance and an improvement in charging potential holding ability can be obtained as shown by curve a in FIG. 3. That is, as shown by curve a in FIG. 3, when the carbon atom content is 30
When using ˜90% a-5iC:H, its resistivity varies with carbon content and is greater than or equal to 10 12 Ω-cm. The above tendency is that a-3iN containing N or O instead of carbon
: H, a-3iO: The same applies to H. The above-mentioned layer 45 is indispensable for modifying the surface of the photoreceptor and making the a-3i-based photosensitive material practically excellent. That is, it enables the basic operations of an electrophotographic photoreceptor, such as charge retention on the surface and attenuation of the surface potential due to light irradiation. Therefore, the repetitive characteristics of charging and optical attenuation become very stable, and good potential characteristics can be reproduced even if left for a long period of time (for example, one month or more). On the other hand, in the case of a photoreceptor having a-3t:H as its surface, it is easily affected by humidity, air, ozone atmosphere, etc., and the potential characteristics change significantly over time. In addition, since the layer 45 has a high surface hardness, it has abrasion resistance during processes such as development, transfer, and cleaning, and also has good heat resistance, so a process that applies heat such as adhesive transfer can be applied. . In order to comprehensively achieve the excellent effects described above, it is important to select the composition of the layer 45. That is, when containing carbon atoms, Si + C = 100a
When atomic% (hereinafter, atomic% is simply expressed as %), 1%≦(C)690%, furthermore 10%≦
CC) 570% is desirable. Due to this C content, the above-mentioned resistivity becomes the desired value, and the optical energy gap becomes approximately 2.5 eV or more, and the irradiated light is : It becomes easier to reach the H layer (charge generation layer) 43. However, if the C content is 1% or less, disadvantages such as mechanical damage occur, and the specific resistance tends to fall below the desired value.
In addition, a portion of the light is absorbed by the surface layer 45, and the photosensitivity of the photoreceptor tends to decrease. In addition, if the C content exceeds 90%, the amount of carbon in the layer increases, and semiconductor properties are likely to be lost, and the deposition rate when forming a-3iC:Hy by a glow discharge method tends to decrease. The content is preferably 90% or less. Similarly, in the case of the layer 45 containing nitrogen or oxygen, 1%≦(N)690% (furthermore, 10%≦(N)570%).
%) is good, 0% less [0]≦70% (even 5%≦[
0]≦30%). In order to improve the charging ability, the surface modified layer 45 may have a high resistance. For this purpose, the surface modified layer may be made intrinsic. When used with positive or negative charging, in order to facilitate the injection of electrons or holes from the intermediate layer into the surface-modified layer and to minimize the residual potential, the surface-modified layer may be of P or N type. good. The amount of impurity doped in each case (at the time of glow discharge decomposition described later) may be as follows. Intrinsic: BJ6/5i842~50 itppm
P type: BzH6/5iH450~1000〃N type
: PH, /SiH, 1-1000 Also, the layer 45 is a
-3iCO, a-3iNO, a -5iO5a-3iO
z, etc., and the film thickness is 400 people ≦L≦
It is also important to select within the range of 5,000 people (especially 400 ≦ t < 2,000 people. In other words, if the film thickness is 5,000
If it exceeds that of humans, the residual potential (7) becomes too high and the photosensitivity decreases, making it easy to lose the good characteristics of the a-3i type photosensitive photosensitivity. Furthermore, if the film thickness is less than 400, charges will not be charged on the surface due to the tunnel effect, resulting in an increase in dark decay and a decrease in photosensitivity. The intermediate layer 46 is provided to improve sensitivity, reduce residual potential, improve adhesion of the surface modified layer, and stabilize images. In order to improve the above characteristics, it is necessary to make it P or N type. The impurity doping amount is (PH3)/(SiH4)=1~
1000 (preferably 10-500) volume lppm %
(BzHb)/l:5iH4) -10~1000
(Preferably 50 to 500) The volume may be set to ppm. The C, N, and C contents of intermediate JI46 are preferably 0<(C)510%, 0<CN)510%, and 0<[0)55%. The thickness of this intermediate layer is preferably 50 to 5,000 people, but if it exceeds 5,000 people, the same phenomenon as described above tends to occur, and if it is less than 50 people, the effect as an intermediate layer becomes poor. Regarding the charge generation layer 43, in order to improve the charging ability,
The resistance of the charge generation layer may be increased. For this purpose, the charge generation layer may be made intrinsic. For this intrinsicization, BzH
It is preferable that 6/5iH4=1 to 20 volumes ffi pp m. Further, the charge generation layer has a thickness of 1 to 10 μm, preferably 5 to 7 μm.
It is better to set it to m. If the thickness of the charge generation layer 43 is less than 1 μm, the sensitivity will not be sufficient, and if it exceeds 10 μm, the residual potential will increase, which is insufficient for practical use. The charge transport layer 42 may be made intrinsic as necessary in order to optimize chargeability and sensitivity. The doping amount for making it intrinsic is CBzHa)/(SiH4)=2~20
00 volume itppm is optimal. However, since the above value depends on the N concentration, it is not necessarily limited to the above value. The thickness of the charge transport layer is preferably 10 to 30 microns. In addition, the composition of the charge transport layer is 1% [N] 530
%, preferably 10%≦CN) 530% is good, 0%
< [O] 510%, preferably 0% [0] 5
1% is good. In addition, the charge blocking layer 44 may be made of elements of Group Va of the periodic table (for example, phosphorus), if necessary, to sufficiently prevent hole injection from the substrate 41 and to improve sensitivity and charging ability.
is doped by glow discharge decomposition to make it intrinsic, and further to N-type (
Furthermore, it is preferable to convert it into an N-type. The doping amount is controlled by the composition of the blocking layer as follows. a-3iC or a-SiCO: Intrinsic BzH6/5iH
42~20 ppm N type (N”) PH: +/5iH
41~1000〃a-SiN or a-3iNO: Intrinsic BJ6/5it141~200Q〃N type (N"
) pHi/5iHa 1-2000 The blocking layer may be a compound such as Sin or 5iOz. Further, the thickness of the blocking layer 44 is preferably 500 μm to 2 μm. If it is less than 500, the blocking effect will be weak (and if it exceeds 2 μm, the charge transport ability will tend to deteriorate. As for the composition of the blocking layer 44, it is desirable to have the following composition: 1% , preferably 10%≦ [C] 670%, and 1% < [N35
90%, preferably 10% [N] 670%,
0%≦[03570%, preferably 0%≦[0]≦30
It is better to set it as %. Note that each of the above layers needs to contain hydrogen. In particular, the hydrogen content in the charge generation layer 43 is essential to compensate for dangling bonds and improve photoconductivity and charge retention, and is preferably 10 to 30%. This content range also applies to the surface modification layer 45, blocking layer 44, and charge transport layer 42. In addition, in addition to boron, A7! is used as an impurity to control the P-type. , Ga, In, Tj2, etc. periodic table ma
Group elements can be used. In addition to phosphorus, for N-type conversion,
Group Va elements of the periodic table, such as As and sb, can be used. Next, a method for manufacturing the above-mentioned photoreceptor (for example, drum-shaped) and an apparatus therefor (glow discharge apparatus) will be explained with reference to FIG. A drum-shaped substrate 41 is set rotatably vertically in a vacuum chamber 52 of this device 51, and a heater 55 is used to rotate the substrate 41.
can be heated to a predetermined temperature from the inside. A cylindrical high frequency electrode 57 with a gas outlet 53 is disposed around and facing the substrate 41, and a glow discharge is generated between the electrode 57 and the substrate 41 by a high frequency power source 56. In addition, 62 in the figure is a supply source of S i Ha or a gaseous silicon compound, 63 is a supply source of hydrocarbon gas such as CH4, 64 is a supply source of nitrogen compound gas such as N2, and 65 is an oxygen compound such as 02. 66 is a carrier gas supply source such as Ar; 67 is an impurity gas (for example, BzHb) supply source; 6
8 for each! It is a total. In this glow discharge device, first, a support such as A! After cleaning the surface of the substrate 41, it is placed in a vacuum chamber 52, and the gas pressure in the vacuum chamber 52 is 1.
The temperature is adjusted to 0-6 Torr and the temperature is evacuated, and the substrate 41 is heated and maintained at a predetermined temperature, particularly 100 to 350°C (preferably 150 to 300°C). Next, using a high-purity inert gas as a carrier gas, SiH4 or a gaseous silicon compound, CH4, N2.02, etc.
2, and a high frequency voltage (for example, 13.5
6 MHz) is applied. As a result, each of the above reaction gases is decomposed by glow discharge between the electrode 57 and the substrate 41,
N+ type a SiC○:)(, i type a-3iNO:)(
, a-3i :H, P'' or N' type a8iCO:H,
a 5iCO:H in the above layer 44.42.43.46
．． 45 (i.e., eg, corresponding to the example of FIG. 1). In the above manufacturing method, the support temperature is set at 100 to 350°C in the step of forming the a-3i layer on the support, so the film quality (especially electrical properties) of the photoreceptor can be improved. . In addition, when forming the above a-3t photoreceptor photosensitive layer,
In order to compensate for dangling bonds, fluorine is introduced in the form of 5iFn or the like instead of or in combination with H, and a St :Fsa-3i :H:F
, a-3iN:F, a-3iN:H:F, a-3iC:
F. It can also be a-3iC:H:F. This place. The amount of fluorine in this case is preferably 0.5 to 10%. The above manufacturing method is based on the glow discharge decomposition method, but there are also sputtering methods, ion blating methods, and methods in which Si is evaporated while introducing activated or ionized hydrogen in a hydrogen discharge tube. (In particular, Japanese Patent Application Laid-Open No. 56-78413 (Patent Application No. 54-152) filed by the present applicant)
The above photoreceptor can also be manufactured by the method of No. 455). Hereinafter, the present invention will be described with reference to specific examples. By glow discharge decomposition method, the first
An electrophotographic photoreceptor having the structure shown in the figure was manufactured. That is, first, after cleaning the surface of a support, for example, a drum-shaped Al substrate 41 having a smooth surface, it is placed in a vacuum chamber 52 shown in FIG.
Torr, and exhaust the air, and keep the substrate 41 at a predetermined temperature, particularly 100 to 350°C (preferably 150°C).
-300°C). Next, high-purity Ar gas was introduced as a carrier gas, high-frequency power with a frequency of 13.56 MHz was applied under a back pressure of 0.5 Torr, and preliminary discharge was performed for 10 minutes. Next, a reaction gas consisting of S i H4 and PH3 was introduced, and the flow rate ratio was 1:1:1:(1,5Xl0
-') of (Ar+5iHa+CHa or NZ+PH:l
) By glow discharge decomposition of the mixed gas, NI type a-3iCO, which takes charge pro-noking function: H layer 4
4 and a5iNO:H charge transport layer 42 at 6 μm/h.
Films were sequentially formed to a predetermined thickness at a deposition rate of r. Continuing, P.
The supply of H3 and CHa was stopped, and S i Ha was decomposed by discharge to form an a-3i:H layer 43 with a thickness of 5 μm. Subsequently, glow discharge decomposition is performed by changing the flow rate ratio of the impurity gas, an intermediate layer 46 with a changed film thickness is formed, and further a-
A 3iCO:H or a-SiNO:H surface protective layer 45 was further provided to complete the electrophotographic photoreceptor. As a comparative example,
A photoreceptor without an intermediate layer was created. The structure of the photoreceptor thus produced was summarized as follows. (1) 6 surface modified layers: a-3iN:O or a-3iC:
0 (2), Intermediate layer: doping amount, film thickness change (see Figure 5) (
3), a-3i: l (charge generation N: film thickness = 5 μm (
4), a-3iNO: H charge transport layer: film thickness = 15
p mN content = 11% 0 content = 0.2% (5), a-SiC: H or a-5iN:H charge blocking layer: film thickness = 0.5 μm C content = 12% (6), Support: Al cylinder (mirror polished finish) Next, various tests were conducted using each of the above photoreceptors as follows. Scratch strength As shown in FIG.
3 Apply a load W to the R diamond needle 70 and rotate the photoreceptor with the motor 71 to scratch it. Next, the electrophotographic copying machine U
- Image is produced using a modified Bix1600 (manufactured by Konishiroku Photo Industry Co., Ltd.), and the scratch strength (g) of the photoreceptor is determined by the load at which white streaks appear on the image. After acclimatizing the photoreceptor in a modified electrophotographic copying machine U-Bix 4500 (manufactured by Konishi Roku Photo Industry Co., Ltd.) for 24 hours in an environment with an image holding temperature of 33° C. and a relative humidity of 80%, the developer, paper,
After 1000 copies were made without contact with the blade, an image was produced and the degree of image blurring was determined based on the following criteria. ◎: There is no image flow at all, and the reproducibility of 5.5-point alphabetic characters and thin lines is good. ○: The 5.5 point letters are slightly thick (becomes). △: The 5.5 point letters are crushed and difficult to read. X: The 5.5 point letters are illegible. -Potential measurement using a modified B ix 2500,
Static neutralizing light with a peak at 400 nm 301 ux-sec
The surface potential of the photoreceptor that remains even after irradiation. Obi position■. (V) Surface potential immediately before development measured using a modified U-Bix 2500 machine (manufactured by Konishi Roku Photo Industry ■) with a 360SX type electrometer (manufactured by Toresok Co., Ltd.) under conditions of a photoconductor inflow current of 200 μA and no exposure. Half dew! E 1/2 ((lux ・5ec) using the above equipment, Guikuroi/Kumira (manufactured by Jishu Kogaku Co., Ltd.)
The exposure amount required to sharply cut long wavelength components of 620 nm or more of the image exposure wavelength and halve the surface potential from 500 to 250. The results are summarized in Figure 7. From these results, it can be seen that if a photoreceptor is produced based on the present invention, a photoreceptor excellent in each performance for electrophotography can be obtained.

[Brief explanation of the drawing]

1 to 7 show examples of the present invention, in which FIG. 1 is a cross-sectional view of an a-3i photoreceptor, and FIG.
A graph showing the optical energy gap of SiC, Fig. 3 is a graph showing the a-3iCO resistivity, Fig. 4 is a schematic cross-sectional view of the glow discharge device, Fig. 5 is a table showing the layer structure of each photoreceptor, FIG. 6 is a schematic diagram of a scratch strength tester, and FIG. 7 is a table showing the characteristics of each photoreceptor. FIG. 8 is a schematic sectional view of a conventional electrophotographic copying machine. In addition, in the symbols shown in the drawings, 39-------a-Si photoreceptor 41---1--Support (substrate) 42--Charge transport layer 43--Charge generation layer 44--Charge blocking layer 45--
------Surface modified layer 46--- This is an intermediate layer. Agent Patent Attorney Hiroshi Aisaka Figure 2 a-Sit-xCx:Hx Figure 3 Figure 6 Figure 4

Claims (1)

[Claims] 1. A charge blocking layer made of amorphous hydrogenated and/or fluorinated silicon containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms; amorphous hydrogenated and/or fluorinated silicon containing nitrogen atoms and oxygen atoms; a charge transport layer made of hydrogenated and/or fluorinated silicon; a charge generation layer made of amorphous hydrogenated and/or fluorinated silicon; doped with an element of group IIIa or group Va of the periodic table; at least 1
an intermediate layer made of amorphous hydrogenated and/or fluorinated silicon containing a species; an amorphous hydrogenated and/or fluorinated layer containing at least one of carbon atoms, nitrogen atoms, and oxygen atoms in a larger amount than the intermediate layer; A photoreceptor that is made up of sequentially laminated surface-modified layers made of silicon.