JPS6228591B2 - - Google Patents
Info
- Publication number
- JPS6228591B2 JPS6228591B2 JP5982880A JP5982880A JPS6228591B2 JP S6228591 B2 JPS6228591 B2 JP S6228591B2 JP 5982880 A JP5982880 A JP 5982880A JP 5982880 A JP5982880 A JP 5982880A JP S6228591 B2 JPS6228591 B2 JP S6228591B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- temperature
- gate electrode
- low
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 238000009279 wet oxidation reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157024A JPS56157024A (en) | 1981-12-04 |
| JPS6228591B2 true JPS6228591B2 (zh) | 1987-06-22 |
Family
ID=13124470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5982880A Granted JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157024A (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652733B2 (ja) * | 1985-06-04 | 1994-07-06 | 日本電気株式会社 | 半導体装置の製造法 |
| US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
| US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
| DE69132695T2 (de) * | 1990-05-11 | 2002-06-13 | Koninkl Philips Electronics Nv | CMOS-Verfahren mit Verwendung von zeitweilig angebrachten Siliciumnitrid-Spacern zum Herstellen von Transistoren (LDD) mit leicht dotiertem Drain |
| US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
| US7829411B2 (en) * | 2002-02-01 | 2010-11-09 | Nxp B.V. | Method and device to form high quality oxide layers of different thickness in one processing step |
| CN102299064B (zh) * | 2010-06-28 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
-
1980
- 1980-05-06 JP JP5982880A patent/JPS56157024A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157024A (en) | 1981-12-04 |
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