JPS6228591B2 - - Google Patents
Info
- Publication number
- JPS6228591B2 JPS6228591B2 JP55059828A JP5982880A JPS6228591B2 JP S6228591 B2 JPS6228591 B2 JP S6228591B2 JP 55059828 A JP55059828 A JP 55059828A JP 5982880 A JP5982880 A JP 5982880A JP S6228591 B2 JPS6228591 B2 JP S6228591B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- temperature
- gate electrode
- low
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/011—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982880A JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157024A JPS56157024A (en) | 1981-12-04 |
| JPS6228591B2 true JPS6228591B2 (member.php) | 1987-06-22 |
Family
ID=13124470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5982880A Granted JPS56157024A (en) | 1980-05-06 | 1980-05-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157024A (member.php) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652733B2 (ja) * | 1985-06-04 | 1994-07-06 | 日本電気株式会社 | 半導体装置の製造法 |
| US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
| US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
| DE69132695T2 (de) * | 1990-05-11 | 2002-06-13 | Koninklijke Philips Electronics N.V., Eindhoven | CMOS-Verfahren mit Verwendung von zeitweilig angebrachten Siliciumnitrid-Spacern zum Herstellen von Transistoren (LDD) mit leicht dotiertem Drain |
| US5089432A (en) * | 1990-08-17 | 1992-02-18 | Taiwan Semiconductor Manufacturing Company | Polycide gate MOSFET process for integrated circuits |
| EP1474825A2 (en) * | 2002-02-01 | 2004-11-10 | Koninklijke Philips Electronics N.V. | Method and device to form high quality oxide layers of different thickness in one processing step |
| CN102299064B (zh) * | 2010-06-28 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 栅结构氧化的方法 |
-
1980
- 1980-05-06 JP JP5982880A patent/JPS56157024A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157024A (en) | 1981-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930001559B1 (ko) | 전계효과 트랜지스터 제조방법 | |
| JPS6231506B2 (member.php) | ||
| JPS6220698B2 (member.php) | ||
| JPS6213814B2 (member.php) | ||
| US5028554A (en) | Process of fabricating an MIS FET | |
| JPS6237551B2 (member.php) | ||
| JPS607775A (ja) | 半導体装置およびその製造方法 | |
| JPS6228591B2 (member.php) | ||
| KR950001950B1 (ko) | 집적회로내의 mos전계효과 트랜지스터 제조방법 | |
| JP3295178B2 (ja) | 半導体装置の製造方法 | |
| JP2720911B2 (ja) | 半導体装置用基板表面を用意する方法 | |
| JPS60145664A (ja) | 半導体装置の製造方法 | |
| JPH02135759A (ja) | 半導体装置およびその製造方法 | |
| JPH0415619B2 (member.php) | ||
| JPS63271971A (ja) | Ｍｏｓ型半導体装置およびその製造方法 | |
| JPH0454390B2 (member.php) | ||
| JPH02130852A (ja) | 半導体装置 | |
| KR0163934B1 (ko) | 다결성 규소 산화 게이트 절연층 및 그 제조 방법, 이를 이용한 다결정 규소 박막 트랜지스터 | |
| JPS6178138A (ja) | 半導体装置の製造方法 | |
| JPH0746698B2 (ja) | 半導体装置の製造方法 | |
| JPS60258964A (ja) | 半導体装置の製造方法 | |
| JP2888461B2 (ja) | 絶縁ゲイト型半導体装置およびその作製方法 | |
| JPS59169179A (ja) | 半導体集積回路装置 | |
| JPH04106982A (ja) | 半導体装置の製造方法 | |
| JPS631071A (ja) | 薄膜半導体装置 |