JPS6228568B2 - - Google Patents
Info
- Publication number
- JPS6228568B2 JPS6228568B2 JP52030328A JP3032877A JPS6228568B2 JP S6228568 B2 JPS6228568 B2 JP S6228568B2 JP 52030328 A JP52030328 A JP 52030328A JP 3032877 A JP3032877 A JP 3032877A JP S6228568 B2 JPS6228568 B2 JP S6228568B2
- Authority
- JP
- Japan
- Prior art keywords
- insb
- thin film
- polycrystalline thin
- magnetoelectric transducer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000004857 zone melting Methods 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052745 lead Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 150000004679 hydroxides Chemical class 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 21
- 239000013078 crystal Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910018626 Al(OH) Inorganic materials 0.000 description 1
- 229910019440 Mg(OH) Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005352 galvanomagnetic phenomena Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032877A JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
| US05/888,465 US4177298A (en) | 1977-03-22 | 1978-03-20 | Method for producing an InSb thin film element |
| NLAANVRAGE7803102,A NL178377C (nl) | 1977-03-22 | 1978-03-22 | Werkwijze voor het vervaardigen van een dun indiumantimonide-filmelement. |
| DE2812656A DE2812656C2 (de) | 1977-03-22 | 1978-03-22 | Verfahren zur Herstellung eines InSb-Dünnschichtbauelementes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3032877A JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53116068A JPS53116068A (en) | 1978-10-11 |
| JPS6228568B2 true JPS6228568B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=12300731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3032877A Granted JPS53116068A (en) | 1977-03-22 | 1977-03-22 | Insb polycrystal thin film of low noise |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53116068A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58213485A (ja) * | 1982-06-04 | 1983-12-12 | Hitachi Ltd | 磁気抵抗効果素子及びその製造方法 |
| JPH0666486B2 (ja) * | 1988-10-14 | 1994-08-24 | 工業技術院長 | ホール効果素子用再結晶膜およびその製造方法 |
-
1977
- 1977-03-22 JP JP3032877A patent/JPS53116068A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53116068A (en) | 1978-10-11 |
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