JPS53116068A - Insb polycrystal thin film of low noise - Google Patents

Insb polycrystal thin film of low noise

Info

Publication number
JPS53116068A
JPS53116068A JP3032877A JP3032877A JPS53116068A JP S53116068 A JPS53116068 A JP S53116068A JP 3032877 A JP3032877 A JP 3032877A JP 3032877 A JP3032877 A JP 3032877A JP S53116068 A JPS53116068 A JP S53116068A
Authority
JP
Japan
Prior art keywords
insb
thin film
low noise
polycrystal thin
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3032877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228568B2 (enrdf_load_stackoverflow
Inventor
Junji Shigeta
Tooru Ooi
Nobuo Kodera
Muneyasu Nakajima
Nobuo Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3032877A priority Critical patent/JPS53116068A/ja
Priority to US05/888,465 priority patent/US4177298A/en
Priority to DE2812656A priority patent/DE2812656C2/de
Priority to NLAANVRAGE7803102,A priority patent/NL178377C/xx
Publication of JPS53116068A publication Critical patent/JPS53116068A/ja
Publication of JPS6228568B2 publication Critical patent/JPS6228568B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP3032877A 1977-03-22 1977-03-22 Insb polycrystal thin film of low noise Granted JPS53116068A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3032877A JPS53116068A (en) 1977-03-22 1977-03-22 Insb polycrystal thin film of low noise
US05/888,465 US4177298A (en) 1977-03-22 1978-03-20 Method for producing an InSb thin film element
DE2812656A DE2812656C2 (de) 1977-03-22 1978-03-22 Verfahren zur Herstellung eines InSb-Dünnschichtbauelementes
NLAANVRAGE7803102,A NL178377C (nl) 1977-03-22 1978-03-22 Werkwijze voor het vervaardigen van een dun indiumantimonide-filmelement.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3032877A JPS53116068A (en) 1977-03-22 1977-03-22 Insb polycrystal thin film of low noise

Publications (2)

Publication Number Publication Date
JPS53116068A true JPS53116068A (en) 1978-10-11
JPS6228568B2 JPS6228568B2 (enrdf_load_stackoverflow) 1987-06-22

Family

ID=12300731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3032877A Granted JPS53116068A (en) 1977-03-22 1977-03-22 Insb polycrystal thin film of low noise

Country Status (1)

Country Link
JP (1) JPS53116068A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213485A (ja) * 1982-06-04 1983-12-12 Hitachi Ltd 磁気抵抗効果素子及びその製造方法
JPH02106080A (ja) * 1988-10-14 1990-04-18 Agency Of Ind Science & Technol ホール効果素子用再結晶膜およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213485A (ja) * 1982-06-04 1983-12-12 Hitachi Ltd 磁気抵抗効果素子及びその製造方法
JPH02106080A (ja) * 1988-10-14 1990-04-18 Agency Of Ind Science & Technol ホール効果素子用再結晶膜およびその製造方法

Also Published As

Publication number Publication date
JPS6228568B2 (enrdf_load_stackoverflow) 1987-06-22

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