JPS62279626A - 半導体用基板に対する不純物のド−ピング方法 - Google Patents
半導体用基板に対する不純物のド−ピング方法Info
- Publication number
- JPS62279626A JPS62279626A JP12317386A JP12317386A JPS62279626A JP S62279626 A JPS62279626 A JP S62279626A JP 12317386 A JP12317386 A JP 12317386A JP 12317386 A JP12317386 A JP 12317386A JP S62279626 A JPS62279626 A JP S62279626A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- voltage
- substrate
- polarity
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12317386A JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12317386A JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62279626A true JPS62279626A (ja) | 1987-12-04 |
JPH0516656B2 JPH0516656B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=14853991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12317386A Granted JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62279626A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0220018A (ja) * | 1988-07-08 | 1990-01-23 | M Setetsuku Kk | プラズマ処理装置の電極構造 |
JP2014107278A (ja) * | 2012-11-22 | 2014-06-09 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、基板処理システム、及び基板処理装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
JPS554937A (en) * | 1978-06-27 | 1980-01-14 | Fujitsu Ltd | Dry etching method |
JPS56138921A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of formation for impurity introduction layer |
JPS57106120A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
JPS57202726A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1986
- 1986-05-27 JP JP12317386A patent/JPS62279626A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
JPS554937A (en) * | 1978-06-27 | 1980-01-14 | Fujitsu Ltd | Dry etching method |
JPS56138921A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of formation for impurity introduction layer |
JPS57106120A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
JPS57202726A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0220018A (ja) * | 1988-07-08 | 1990-01-23 | M Setetsuku Kk | プラズマ処理装置の電極構造 |
JP2014107278A (ja) * | 2012-11-22 | 2014-06-09 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、基板処理システム、及び基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0516656B2 (enrdf_load_stackoverflow) | 1993-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |