JPS62279626A - 半導体用基板に対する不純物のド−ピング方法 - Google Patents
半導体用基板に対する不純物のド−ピング方法Info
- Publication number
- JPS62279626A JPS62279626A JP12317386A JP12317386A JPS62279626A JP S62279626 A JPS62279626 A JP S62279626A JP 12317386 A JP12317386 A JP 12317386A JP 12317386 A JP12317386 A JP 12317386A JP S62279626 A JPS62279626 A JP S62279626A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- voltage
- substrate
- polarity
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12317386A JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12317386A JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62279626A true JPS62279626A (ja) | 1987-12-04 |
| JPH0516656B2 JPH0516656B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=14853991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12317386A Granted JPS62279626A (ja) | 1986-05-27 | 1986-05-27 | 半導体用基板に対する不純物のド−ピング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62279626A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220018A (ja) * | 1988-07-08 | 1990-01-23 | M Setetsuku Kk | プラズマ処理装置の電極構造 |
| JP2014107278A (ja) * | 2012-11-22 | 2014-06-09 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、基板処理システム、及び基板処理装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
| JPS554937A (en) * | 1978-06-27 | 1980-01-14 | Fujitsu Ltd | Dry etching method |
| JPS56138921A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of formation for impurity introduction layer |
| JPS57106120A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
| JPS57202726A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1986
- 1986-05-27 JP JP12317386A patent/JPS62279626A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5328378A (en) * | 1976-08-27 | 1978-03-16 | Handotai Kenkyu Shinkokai | Method of plasma etching |
| JPS554937A (en) * | 1978-06-27 | 1980-01-14 | Fujitsu Ltd | Dry etching method |
| JPS56138921A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of formation for impurity introduction layer |
| JPS57106120A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
| JPS57202726A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220018A (ja) * | 1988-07-08 | 1990-01-23 | M Setetsuku Kk | プラズマ処理装置の電極構造 |
| JP2014107278A (ja) * | 2012-11-22 | 2014-06-09 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、基板処理システム、及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0516656B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3119693B2 (ja) | 半導体基板の製造方法及びその装置 | |
| US4465529A (en) | Method of producing semiconductor device | |
| KR100204856B1 (ko) | 반도체 기판의 표면 영역내에 얕은 접합을 형성하기 위한 방법 및 장치 | |
| EP0784865A1 (en) | Field-enhanced diffusion using optical activation | |
| CN103000672A (zh) | 半导体主体有掺杂材料区域的元器件和生成该区域的方法 | |
| JPH08255762A (ja) | 半導体デバイスの製造方法 | |
| Kimerling et al. | Injection‐stimulated dislocation motion in semiconductors | |
| US4533831A (en) | Non-mass-analyzed ion implantation | |
| Ensinger | Semiconductor processing by plasma immersion ion implantation | |
| JPS62279626A (ja) | 半導体用基板に対する不純物のド−ピング方法 | |
| Prokhorov et al. | Laser solid-phase doping of semiconductors | |
| Lee et al. | A new self‐limiting process for the production of thin submicron semiconductor films | |
| JPH0376129A (ja) | 窒化ホウ素を用いた電子装置の作製方法 | |
| Myakon’kikh et al. | Photovoltaic effect in a structure based on amorphous and nanoporous silicon formed by plasma immersion ion implantation | |
| KR20090132541A (ko) | 기판형 태양전지의 제조방법 | |
| Camm et al. | Engineering ultra-shallow junctions using fRTP/sup TM | |
| JPH0786603A (ja) | 半導体膜の製造方法 | |
| Werner et al. | Crystallographic changes in electron pulse annealing of Ti-implanted GaP | |
| US9484474B1 (en) | Ultrananocrystalline diamond contacts for electronic devices | |
| JP3986543B2 (ja) | 半導体の作製方法 | |
| JP4061413B2 (ja) | 半導体装置の製造方法 | |
| JPH01129413A (ja) | 半導体基体への不純物導入方法 | |
| JP2764422B2 (ja) | 薄膜トランジスタの作製方法 | |
| Chan et al. | Plasma doping for ultra-shallow junctions | |
| JPS61141127A (ja) | 化合物半導体の活性層形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |