JPH0516656B2 - - Google Patents

Info

Publication number
JPH0516656B2
JPH0516656B2 JP61123173A JP12317386A JPH0516656B2 JP H0516656 B2 JPH0516656 B2 JP H0516656B2 JP 61123173 A JP61123173 A JP 61123173A JP 12317386 A JP12317386 A JP 12317386A JP H0516656 B2 JPH0516656 B2 JP H0516656B2
Authority
JP
Japan
Prior art keywords
substrate
stage
voltage
electrode
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61123173A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62279626A (ja
Inventor
Keiki Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMU SETETSUKU KK
Original Assignee
EMU SETETSUKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EMU SETETSUKU KK filed Critical EMU SETETSUKU KK
Priority to JP12317386A priority Critical patent/JPS62279626A/ja
Publication of JPS62279626A publication Critical patent/JPS62279626A/ja
Publication of JPH0516656B2 publication Critical patent/JPH0516656B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP12317386A 1986-05-27 1986-05-27 半導体用基板に対する不純物のド−ピング方法 Granted JPS62279626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12317386A JPS62279626A (ja) 1986-05-27 1986-05-27 半導体用基板に対する不純物のド−ピング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12317386A JPS62279626A (ja) 1986-05-27 1986-05-27 半導体用基板に対する不純物のド−ピング方法

Publications (2)

Publication Number Publication Date
JPS62279626A JPS62279626A (ja) 1987-12-04
JPH0516656B2 true JPH0516656B2 (enrdf_load_stackoverflow) 1993-03-05

Family

ID=14853991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12317386A Granted JPS62279626A (ja) 1986-05-27 1986-05-27 半導体用基板に対する不純物のド−ピング方法

Country Status (1)

Country Link
JP (1) JPS62279626A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220018A (ja) * 1988-07-08 1990-01-23 M Setetsuku Kk プラズマ処理装置の電極構造
JP6143440B2 (ja) * 2012-11-22 2017-06-07 住重試験検査株式会社 半導体装置の製造方法及び基板処理システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5328378A (en) * 1976-08-27 1978-03-16 Handotai Kenkyu Shinkokai Method of plasma etching
JPS554937A (en) * 1978-06-27 1980-01-14 Fujitsu Ltd Dry etching method
JPS56138921A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Method of formation for impurity introduction layer
JPS57106120A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
DE3118785A1 (de) * 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
JPS57202726A (en) * 1981-06-05 1982-12-11 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS62279626A (ja) 1987-12-04

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