JPS622704B2 - - Google Patents

Info

Publication number
JPS622704B2
JPS622704B2 JP14462879A JP14462879A JPS622704B2 JP S622704 B2 JPS622704 B2 JP S622704B2 JP 14462879 A JP14462879 A JP 14462879A JP 14462879 A JP14462879 A JP 14462879A JP S622704 B2 JPS622704 B2 JP S622704B2
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate
mos
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14462879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5667962A (en
Inventor
Tooru Kuwabara
Hisayoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14462879A priority Critical patent/JPS5667962A/ja
Publication of JPS5667962A publication Critical patent/JPS5667962A/ja
Publication of JPS622704B2 publication Critical patent/JPS622704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14462879A 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor Granted JPS5667962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Publications (2)

Publication Number Publication Date
JPS5667962A JPS5667962A (en) 1981-06-08
JPS622704B2 true JPS622704B2 (ko) 1987-01-21

Family

ID=15366453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14462879A Granted JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5667962A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1242532A (en) * 1984-05-03 1988-09-27 Chong M. Lin Input protection arrangement for vlsi intergrated circuit devices
JPS6161468A (ja) * 1984-08-31 1986-03-29 Seiko Epson Corp 静電気保護回路
JPS6187357A (ja) * 1984-09-18 1986-05-02 Sanyo Electric Co Ltd 半導体集積回路装置
US6191633B1 (en) 1997-09-12 2001-02-20 Nec Corporation Semiconductor integrated circuit with protection circuit against electrostatic discharge

Also Published As

Publication number Publication date
JPS5667962A (en) 1981-06-08

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