JPS622700B2 - - Google Patents
Info
- Publication number
- JPS622700B2 JPS622700B2 JP55019996A JP1999680A JPS622700B2 JP S622700 B2 JPS622700 B2 JP S622700B2 JP 55019996 A JP55019996 A JP 55019996A JP 1999680 A JP1999680 A JP 1999680A JP S622700 B2 JPS622700 B2 JP S622700B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- plasma
- high voltage
- deflection plate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999680A JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999680A JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56116622A JPS56116622A (en) | 1981-09-12 |
| JPS622700B2 true JPS622700B2 (cs) | 1987-01-21 |
Family
ID=12014764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1999680A Granted JPS56116622A (en) | 1980-02-20 | 1980-02-20 | X-ray transcriber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116622A (cs) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130351A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | X-ray device |
| JPS58113899A (ja) * | 1981-12-28 | 1983-07-06 | 富士通株式会社 | エツクス線照射装置 |
| JPS58115821A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | X線露光装置 |
| JPS5913325A (ja) * | 1982-07-14 | 1984-01-24 | Nec Corp | プラズマx線露光装置 |
| TWI255394B (en) | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
-
1980
- 1980-02-20 JP JP1999680A patent/JPS56116622A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116622A (en) | 1981-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Resist charging in electron beam lithography | |
| GB1488184A (en) | X-ray mask structures and methods for making the same | |
| US4119855A (en) | Non vacuum soft x-ray lithographic source | |
| JPS58119641A (ja) | マスクのテスト方法 | |
| US5327475A (en) | Soft x-ray submicron lithography using multiply charged ions | |
| US3940620A (en) | Electrostatic recording of X-ray images | |
| US4746587A (en) | Electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask | |
| JPS622700B2 (cs) | ||
| JPH01159955A (ja) | 電子イメージプロジェクタ | |
| JP7330138B2 (ja) | イオン検出器 | |
| JPH0687408B2 (ja) | プラズマx線発生装置 | |
| GB2215907A (en) | Charged particle apparatus | |
| JP7333292B2 (ja) | イオン検出器 | |
| US4129779A (en) | Photocontrolled ion-flow electron radiography apparatus with multi-layered mesh structure | |
| JPH01265443A (ja) | X線露光装置 | |
| JP3751650B2 (ja) | 静電気中和装置 | |
| JPS58115821A (ja) | X線露光装置 | |
| JP2533502B2 (ja) | プラズマx線源 | |
| JPH0584628B2 (cs) | ||
| JP2674289B2 (ja) | 電子ビーム露光装置及び露光方法 | |
| JPH05290789A (ja) | イオン注入装置 | |
| JPH02112140A (ja) | 低速イオン銃 | |
| JP2890431B2 (ja) | 超電導回路の製造方法 | |
| KR20250120986A (ko) | 오염 제어 | |
| JPH10208678A (ja) | 電子顕微鏡 |