JPS622698B2 - - Google Patents
Info
- Publication number
- JPS622698B2 JPS622698B2 JP10373281A JP10373281A JPS622698B2 JP S622698 B2 JPS622698 B2 JP S622698B2 JP 10373281 A JP10373281 A JP 10373281A JP 10373281 A JP10373281 A JP 10373281A JP S622698 B2 JPS622698 B2 JP S622698B2
- Authority
- JP
- Japan
- Prior art keywords
- observation window
- bell gear
- gas
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10373281A JPS586124A (ja) | 1981-07-02 | 1981-07-02 | 半導体気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10373281A JPS586124A (ja) | 1981-07-02 | 1981-07-02 | 半導体気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS586124A JPS586124A (ja) | 1983-01-13 |
JPS622698B2 true JPS622698B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=14361807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10373281A Granted JPS586124A (ja) | 1981-07-02 | 1981-07-02 | 半導体気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS586124A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019083051A1 (ja) * | 2017-10-28 | 2019-05-02 | mui Lab株式会社 | 操作表示パネル組込物品 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097622A (ja) * | 1983-11-01 | 1985-05-31 | Toshiba Mach Co Ltd | エピタキシヤル装置 |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6306246B1 (en) * | 2000-01-14 | 2001-10-23 | Advanced Micro Devices, Inc. | Dual window optical port for improved end point detection |
US6863772B2 (en) * | 2002-10-09 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Dual-port end point window for plasma etcher |
JP4026529B2 (ja) * | 2003-04-10 | 2007-12-26 | 東京エレクトロン株式会社 | シャワーヘッド構造及び処理装置 |
JP4909613B2 (ja) * | 2006-03-27 | 2012-04-04 | 大陽日酸株式会社 | 気相成長装置 |
US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
-
1981
- 1981-07-02 JP JP10373281A patent/JPS586124A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019083051A1 (ja) * | 2017-10-28 | 2019-05-02 | mui Lab株式会社 | 操作表示パネル組込物品 |
Also Published As
Publication number | Publication date |
---|---|
JPS586124A (ja) | 1983-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5704214A (en) | Apparatus for removing tramp materials and method therefor | |
KR101160724B1 (ko) | 기화기 및 반도체 처리 시스템 | |
KR100298964B1 (ko) | 열처리장치 | |
JPS622698B2 (enrdf_load_stackoverflow) | ||
US6712909B2 (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
KR20130032254A (ko) | 공정 챔버에서의 기상 증착에 의해 반도체 웨이퍼 상에 층을 증착하는 방법 및 장치 | |
JP3551609B2 (ja) | 熱処理装置 | |
JPS59112611A (ja) | 気相成長装置 | |
US5944422A (en) | Apparatus for measuring the processing temperature of workpieces particularly semiconductor wafers | |
JPH05190464A (ja) | 気相成長装置 | |
JP4980672B2 (ja) | 気相成長装置 | |
TWI829249B (zh) | 用於膜沉積的生長監測系統及方法 | |
TW200818276A (en) | Vapor phase epitaxy apparatus | |
CN101250692B (zh) | 处理容器的大气开放方法 | |
JPS61210622A (ja) | 半導体製造装置 | |
JP2002043236A (ja) | 半導体処理装置 | |
JPH06953B2 (ja) | 薄膜形成装置 | |
JPH1025577A (ja) | 成膜処理装置 | |
JP2006019583A (ja) | 加熱処理装置及び加熱処理方法 | |
JPH0561574B2 (enrdf_load_stackoverflow) | ||
JPH0193130A (ja) | 縦型炉 | |
JP3846934B2 (ja) | 反応チャンバの温度制御方法および装置 | |
JPH0888180A (ja) | 基板処理装置 | |
JPS63149619A (ja) | 赤外線ランプ加熱による高温顕微鏡加熱装置 | |
JPH04172A (ja) | 低温での温度制御方法およびその方法に使用する装置 |