JPS6226569B2 - - Google Patents

Info

Publication number
JPS6226569B2
JPS6226569B2 JP54100272A JP10027279A JPS6226569B2 JP S6226569 B2 JPS6226569 B2 JP S6226569B2 JP 54100272 A JP54100272 A JP 54100272A JP 10027279 A JP10027279 A JP 10027279A JP S6226569 B2 JPS6226569 B2 JP S6226569B2
Authority
JP
Japan
Prior art keywords
silicon
film
sio
growth
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54100272A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5624925A (en
Inventor
Masao Kawamura
Hiroji Saida
Akira Sato
Masahiko Kogirima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10027279A priority Critical patent/JPS5624925A/ja
Publication of JPS5624925A publication Critical patent/JPS5624925A/ja
Publication of JPS6226569B2 publication Critical patent/JPS6226569B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/24—
    • H10P14/271—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP10027279A 1979-08-08 1979-08-08 Selective growth of silicon Granted JPS5624925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Publications (2)

Publication Number Publication Date
JPS5624925A JPS5624925A (en) 1981-03-10
JPS6226569B2 true JPS6226569B2 (Direct) 1987-06-09

Family

ID=14269561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10027279A Granted JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Country Status (1)

Country Link
JP (1) JPS5624925A (Direct)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JP2662396B2 (ja) * 1986-03-31 1997-10-08 キヤノン株式会社 結晶性堆積膜の形成方法
DE68912638T2 (de) * 1988-03-27 1994-06-16 Canon Kk Verfahren zur Herstellung einer Kristallschicht auf einem Substrat.
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG118117A1 (en) 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7705385B2 (en) * 2005-09-12 2010-04-27 International Business Machines Corporation Selective deposition of germanium spacers on nitride

Also Published As

Publication number Publication date
JPS5624925A (en) 1981-03-10

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