JPS6224939B2 - - Google Patents

Info

Publication number
JPS6224939B2
JPS6224939B2 JP55066562A JP6656280A JPS6224939B2 JP S6224939 B2 JPS6224939 B2 JP S6224939B2 JP 55066562 A JP55066562 A JP 55066562A JP 6656280 A JP6656280 A JP 6656280A JP S6224939 B2 JPS6224939 B2 JP S6224939B2
Authority
JP
Japan
Prior art keywords
diffusion
wafer
source
target
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55066562A
Other languages
English (en)
Japanese (ja)
Other versions
JPS568819A (en
Inventor
Fushingu Changu Maiku
Kasuto Haatoman Debitsudo
Uiriamu Kenedei Richaado
Roetsuku Arufuretsudo
Baanaado Asaritsuto Henri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS568819A publication Critical patent/JPS568819A/ja
Publication of JPS6224939B2 publication Critical patent/JPS6224939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/19—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H10P32/12—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP6656280A 1979-05-21 1980-05-21 Method of diffusing aluminum Granted JPS568819A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/040,881 US4239560A (en) 1979-05-21 1979-05-21 Open tube aluminum oxide disc diffusion

Publications (2)

Publication Number Publication Date
JPS568819A JPS568819A (en) 1981-01-29
JPS6224939B2 true JPS6224939B2 (OSRAM) 1987-05-30

Family

ID=21913485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6656280A Granted JPS568819A (en) 1979-05-21 1980-05-21 Method of diffusing aluminum

Country Status (4)

Country Link
US (1) US4239560A (OSRAM)
EP (1) EP0019272B1 (OSRAM)
JP (1) JPS568819A (OSRAM)
DE (1) DE3063857D1 (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824006B2 (ja) * 1980-01-30 1983-05-18 株式会社日立製作所 不純物拡散法
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
US5890951A (en) * 1996-04-15 1999-04-06 Lsi Logic Corporation Utility wafer for chemical-mechanical planarization

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6407230A (OSRAM) * 1963-09-28 1965-03-29
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
US3577287A (en) * 1968-02-12 1971-05-04 Gen Motors Corp Aluminum diffusion technique
GB1199399A (en) * 1968-06-21 1970-07-22 Matsushita Electronics Corp Improvements in or relating to the Manufacture of Semiconductors.
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects
DE2133877A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3842794A (en) * 1973-06-29 1974-10-22 Ibm Apparatus for high temperature semiconductor processing
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4141738A (en) * 1978-03-16 1979-02-27 Owens-Illinois, Inc. Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus

Also Published As

Publication number Publication date
JPS568819A (en) 1981-01-29
US4239560A (en) 1980-12-16
EP0019272B1 (en) 1983-06-22
EP0019272A1 (en) 1980-11-26
DE3063857D1 (en) 1983-07-28

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