JPS62247567A - 静電誘導サイリスタ - Google Patents
静電誘導サイリスタInfo
- Publication number
- JPS62247567A JPS62247567A JP19629386A JP19629386A JPS62247567A JP S62247567 A JPS62247567 A JP S62247567A JP 19629386 A JP19629386 A JP 19629386A JP 19629386 A JP19629386 A JP 19629386A JP S62247567 A JPS62247567 A JP S62247567A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- anode
- cathode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629386A JPS62247567A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629386A JPS62247567A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP836679A Division JPS5599774A (en) | 1979-01-26 | 1979-01-26 | Electrostatic induction type thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247567A true JPS62247567A (ja) | 1987-10-28 |
| JPH022307B2 JPH022307B2 (enExample) | 1990-01-17 |
Family
ID=16355392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19629386A Granted JPS62247567A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247567A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236069B1 (en) | 1990-09-17 | 2001-05-22 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
| JP2005268465A (ja) * | 2004-03-18 | 2005-09-29 | Ngk Insulators Ltd | 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (enExample) * | 1974-03-08 | 1975-09-22 | ||
| JPS52147985A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5399779A (en) * | 1977-02-10 | 1978-08-31 | Handotai Kenkyu Shinkokai | Insulated gate electrostatic induction semiconductor |
-
1986
- 1986-08-21 JP JP19629386A patent/JPS62247567A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (enExample) * | 1974-03-08 | 1975-09-22 | ||
| JPS52147985A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5399779A (en) * | 1977-02-10 | 1978-08-31 | Handotai Kenkyu Shinkokai | Insulated gate electrostatic induction semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236069B1 (en) | 1990-09-17 | 2001-05-22 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
| JP2005268465A (ja) * | 2004-03-18 | 2005-09-29 | Ngk Insulators Ltd | 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH022307B2 (enExample) | 1990-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6221275B2 (enExample) | ||
| US9312334B2 (en) | Semiconductor component | |
| JP2561413B2 (ja) | 半導体装置 | |
| US9502547B2 (en) | Charge reservoir IGBT top structure | |
| TWI692924B (zh) | 電力轉換電路 | |
| JP2016115847A (ja) | 半導体装置 | |
| WO2001048809A1 (en) | Junction field-effect transistor and method of manufacture thereof | |
| JPWO2018074434A1 (ja) | 半導体装置 | |
| JP2019129250A (ja) | 半導体装置及びその製造方法 | |
| JP7772122B2 (ja) | 半導体装置 | |
| US20220416018A1 (en) | Semiconductor device | |
| JPS62247567A (ja) | 静電誘導サイリスタ | |
| JP3189576B2 (ja) | 半導体装置 | |
| KR102170068B1 (ko) | 바이폴라 논-펀치-스루 전력 반도체 디바이스 | |
| JP2000031483A (ja) | 静電誘導半導体装置 | |
| JPH06151826A (ja) | 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ | |
| JP3214242B2 (ja) | 半導体装置 | |
| JPS639386B2 (enExample) | ||
| JPS62247566A (ja) | 静電誘導サイリスタ | |
| JP3124611B2 (ja) | Mosアノードショート補助ゲート構造を有する半導体素子 | |
| JP3279092B2 (ja) | 半導体装置 | |
| JP3692808B2 (ja) | 半導体装置 | |
| JP3539367B2 (ja) | 半導体装置 | |
| JPS6013309B2 (ja) | 静電誘導形半導体装置 | |
| JP3589091B2 (ja) | 半導体装置 |