JPS62247567A - 静電誘導サイリスタ - Google Patents

静電誘導サイリスタ

Info

Publication number
JPS62247567A
JPS62247567A JP19629386A JP19629386A JPS62247567A JP S62247567 A JPS62247567 A JP S62247567A JP 19629386 A JP19629386 A JP 19629386A JP 19629386 A JP19629386 A JP 19629386A JP S62247567 A JPS62247567 A JP S62247567A
Authority
JP
Japan
Prior art keywords
region
gate
anode
cathode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19629386A
Other languages
English (en)
Japanese (ja)
Other versions
JPH022307B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Tadahiro Omi
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP19629386A priority Critical patent/JPS62247567A/ja
Publication of JPS62247567A publication Critical patent/JPS62247567A/ja
Publication of JPH022307B2 publication Critical patent/JPH022307B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
JP19629386A 1986-08-21 1986-08-21 静電誘導サイリスタ Granted JPS62247567A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19629386A JPS62247567A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19629386A JPS62247567A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP836679A Division JPS5599774A (en) 1979-01-26 1979-01-26 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS62247567A true JPS62247567A (ja) 1987-10-28
JPH022307B2 JPH022307B2 (enExample) 1990-01-17

Family

ID=16355392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19629386A Granted JPS62247567A (ja) 1986-08-21 1986-08-21 静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS62247567A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236069B1 (en) 1990-09-17 2001-05-22 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP2005268465A (ja) * 2004-03-18 2005-09-29 Ngk Insulators Ltd 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120780A (enExample) * 1974-03-08 1975-09-22
JPS52147985A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Electrostatic induction type thyristor
JPS5399779A (en) * 1977-02-10 1978-08-31 Handotai Kenkyu Shinkokai Insulated gate electrostatic induction semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120780A (enExample) * 1974-03-08 1975-09-22
JPS52147985A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Electrostatic induction type thyristor
JPS5399779A (en) * 1977-02-10 1978-08-31 Handotai Kenkyu Shinkokai Insulated gate electrostatic induction semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236069B1 (en) 1990-09-17 2001-05-22 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP2005268465A (ja) * 2004-03-18 2005-09-29 Ngk Insulators Ltd 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置

Also Published As

Publication number Publication date
JPH022307B2 (enExample) 1990-01-17

Similar Documents

Publication Publication Date Title
JPS6221275B2 (enExample)
US9312334B2 (en) Semiconductor component
JP2561413B2 (ja) 半導体装置
US9502547B2 (en) Charge reservoir IGBT top structure
TWI692924B (zh) 電力轉換電路
JP2016115847A (ja) 半導体装置
WO2001048809A1 (en) Junction field-effect transistor and method of manufacture thereof
JPWO2018074434A1 (ja) 半導体装置
JP2019129250A (ja) 半導体装置及びその製造方法
JP7772122B2 (ja) 半導体装置
US20220416018A1 (en) Semiconductor device
JPS62247567A (ja) 静電誘導サイリスタ
JP3189576B2 (ja) 半導体装置
KR102170068B1 (ko) 바이폴라 논-펀치-스루 전력 반도체 디바이스
JP2000031483A (ja) 静電誘導半導体装置
JPH06151826A (ja) 分割ゲート型カソード短絡構造を有する絶縁ゲート静電誘導サイリスタ
JP3214242B2 (ja) 半導体装置
JPS639386B2 (enExample)
JPS62247566A (ja) 静電誘導サイリスタ
JP3124611B2 (ja) Mosアノードショート補助ゲート構造を有する半導体素子
JP3279092B2 (ja) 半導体装置
JP3692808B2 (ja) 半導体装置
JP3539367B2 (ja) 半導体装置
JPS6013309B2 (ja) 静電誘導形半導体装置
JP3589091B2 (ja) 半導体装置