JPS6223452B2 - - Google Patents

Info

Publication number
JPS6223452B2
JPS6223452B2 JP4220979A JP4220979A JPS6223452B2 JP S6223452 B2 JPS6223452 B2 JP S6223452B2 JP 4220979 A JP4220979 A JP 4220979A JP 4220979 A JP4220979 A JP 4220979A JP S6223452 B2 JPS6223452 B2 JP S6223452B2
Authority
JP
Japan
Prior art keywords
ion implantation
ions
ion
photoresist film
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4220979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55134929A (en
Inventor
Masakatsu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP4220979A priority Critical patent/JPS55134929A/ja
Publication of JPS55134929A publication Critical patent/JPS55134929A/ja
Publication of JPS6223452B2 publication Critical patent/JPS6223452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4220979A 1979-04-06 1979-04-06 Ion implantation Granted JPS55134929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4220979A JPS55134929A (en) 1979-04-06 1979-04-06 Ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4220979A JPS55134929A (en) 1979-04-06 1979-04-06 Ion implantation

Publications (2)

Publication Number Publication Date
JPS55134929A JPS55134929A (en) 1980-10-21
JPS6223452B2 true JPS6223452B2 (enrdf_load_stackoverflow) 1987-05-22

Family

ID=12629622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4220979A Granted JPS55134929A (en) 1979-04-06 1979-04-06 Ion implantation

Country Status (1)

Country Link
JP (1) JPS55134929A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
JP4627964B2 (ja) * 2002-10-24 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102315105A (zh) * 2010-07-08 2012-01-11 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
JP5925745B2 (ja) * 2013-10-15 2016-05-25 株式会社タイヨーパッケージ 包装用箱及びその展開シート

Also Published As

Publication number Publication date
JPS55134929A (en) 1980-10-21

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