JPS62234350A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent disconnections due to the peeling of a bump electrode by a method wherein an interconnection to the bump electrode is formed at the same time as a first layer interconnection, the bump electrode section in the interconnection is exposed, layer insulating films and second layer or more of interconnections are laminated alternately and the bump electrode is shaped onto the interconnection in the bump electrode section. CONSTITUTION:The upper surface of an silicon substrate 1 is coated with a thin oxide film 2, semiconductor elements, such as an MOSFET, a bipolar transistor or the like are integrated to the substrate 1, the semiconductor element sections are coated with a thick insulating film 3, an Al film is evaporated on the oxide film 2 and the insulating film 3, and a first layer interconnection 4 is formed through patterning. The interconnection extended simultane ously to shape pad electrodes 5 on the outsides of the element sections, the element sections are coated with a layer insulating film 6, such as an oxide film, a coated film, etc., and a second layer interconnection 7 is formed in the same manner as the interconnection 4. The second layer interconnection 7 and the pad electrodes 5 are connected through through- holes reaching the first layer interconnection 4. Accordingly, laminates having different elastic moduli and thermal expansion coefficients are removed under bump electrodes, and stress generated in connecting sections with the interconnections is reduced, thus preventing peeling in the connecting sections.

Description

[Detailed description of the invention] [Technical field to which the invention pertains]

The present invention relates to a semiconductor having multiple layers of wiring formed on a semiconductor substrate by laminating them with an insulating film interposed therebetween, a bump electrode connected to the wiring, and a bump electrode fixed to a conductor on the insulating substrate. The present invention relates to a method for manufacturing a device.

[Prior art and its problems]

Bump electrodes on semiconductor substrates that have multilayer wiring and are mounted on insulating substrates using the wireless bonding method are conventionally provided on the top layer of wiring by plating through a base metal film. The difference in elastic modulus and coefficient of thermal expansion between the underlying wiring conductor film and the interlayer insulation film made of an inorganic insulator such as an oxide or an organic insulator causes peeling, which can easily cause disconnection. There was a problem.

[Purpose of the invention]

An object of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a semiconductor device with high reliability, which is free from the risk of disconnection due to IA* of bump electrodes connected to conductors on an insulating substrate. do.

[Key points of the invention]

In the present invention, when forming a first layer of wiring on a semiconductor substrate via an insulating film, wiring to a bump electrode is also formed, and then the bump electrode portion of the wiring is exposed to separate the layers. After alternately laminating the film and the wiring from the second layer onward, a bump electrode is formed on the wiring in the bump electrode section.The bump electrode is formed directly on the semiconductor substrate via an insulating film, so there is no peeling. The above-mentioned purpose is achieved.

[Embodiments of the invention]

FIG. 1 shows a semiconductor substrate according to an embodiment of the present invention, in which the upper surface of a silicon substrate 1 is covered with a thin oxide film 2. As shown in FIG. Semiconductor elements such as MOSFETs or bipolar transistors are integrated on this substrate 1, and this portion is covered with a thick insulating film 3. Next, an M film is deposited on the oxide film 2 and the insulating film 3 and patterned to form a first layer interconnection &l4. At the same time, extend this wiring and connect the pad electrode 5 to the outside of the element part.
form. Next, the element portion is covered with an interlayer insulating film 6 such as an oxide film or a coating film, and a second layer wiring 7 is formed in the same manner as the wiring 4.
When patterning the FX deposited film for the 0-layer insulation film 6 and wiring 7 that form the second layer wiring 7, the part above the pad "1i5 is removed to expose the pad electrode.
The connection between the band electrode 5 and the band electrode 5 is made through a through hole that reaches the first layer wiring 4. A solder or gold bump electrode 8 is formed on the exposed pad electrode 5 by plating or the like with a base metal layer interposed therebetween. Finally, the element portion is covered with a bancibasin [99] made of Sl, N, etc. by the CVD method. Since the semiconductor substrate shown in FIG. 1 is then mounted using a face-down flip-chip method or a TAB method using a face amplifier, bump electrodes are fused to an insulating substrate or a conductor on a tape. In the case of face down, the height of the bump electrode 8 is set higher than the height of the element section. Effects of the Invention According to the present invention, by providing the bump electrode not on the upper layer wiring of the multilayer wiring but on the extension of the first layer wiring on the semiconductor substrate, the elastic modulus and thermal expansion can be reduced under the bump electrode. Since there is no stack of layers with different coefficients, the stress generated at the connection with the β rays is reduced, IAjll is prevented from being induced at the connection, and the reliability of a semiconductor device mounted with an IC chip or the like can be increased.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a semiconductor substrate of a semiconductor device according to an embodiment of the present invention. 1: Silicon substrate, 2: Oxide film, 3: Insulating film, 4: First layer wiring, 5: Pad electrode, 6: N interlayer insulation film, 7: Second layer wiring, 8: Bump electrode, 9: Buff layer Figure 1

Claims (1)

[Claims] 1) A manufacturing method for a device having multiple layers of wiring laminated on a semiconductor substrate with an insulating film interposed therebetween, and in which the wiring and a conductor on the insulating substrate are connected by fixing bump electrodes. In this step, the wiring to the bump electrode is formed at the same time as the wiring in the first layer, and then the bump electrode part of the wiring is exposed and the interlayer insulating film and the wiring in the second and subsequent layers are alternately laminated. A method of manufacturing a semiconductor device, comprising forming a bump electrode on wiring of an electrode section. 2) A method for manufacturing a semiconductor device according to claim 1, wherein the bump electrode portion is finally exposed on the semiconductor substrate and a passivation film is deposited on the semiconductor substrate.