JPS5988863A - Semiconductor device - Google Patents

Abstract

PURPOSE:To contrive to make composite-multifunctional and speed up by a method wherein a desired electrode is directly connected by opposing the main surface of another LSI substrate to one LSI substrate, which are fixed to each other. CONSTITUTION:Functional elements are integrated on the main surface of the substrate 1 and covered with a protection film 2, a part of the film 2 is removed, and a bump electrode 3 is laid. Functional elements are integrated also on the main surface of the substrate 4, a protection film 5 and an electrode 6 are formed. The main surface of the substrate 4 is placed on the main surface of the substrate 1 in opposition thereto, and the solder plate electrodes 6 and 3 are heated and connected. If necessary, metallic lead wires 7 are connected simultaneously at the time of mutual connection of the electrodes. Epoxy resin 8 is applied on the side surface of the substrates and in gaps and solidified, resulting in adhesion. This constitution enables to make multifunctional to a high density by superposing LSI's without increasing the area of the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION Industrial Application The present invention relates to a 11' conductor device, and particularly provides a high-density, multi-functional 11' conductor device.

Conventional configuration and its problems With the demand for smaller and faster system equipment, semiconductor integrated circuits (hereinafter referred to as LSI) i! ”?i densification.

The multi-functional 1F is disappointing. Because of this, LSI
Efforts are being made to make the pattern finer, but it takes 1″1 to make the pattern finer.
'Since there is a distance of 1 m between various parts, there is a limit to miniaturization in practical use. Also, as an approach to multi-machine C storage, large-scale LSIs are being implemented through high integration. On the other hand, some attempts have been made to combine semiconductor processes in order to increase the number of functions, but this has not been put to practical use.

That is, it is difficult with the current technology to form various types of I'-conductor devices on the same substrate.

For this reason, in order to make the )14 conductor device multi-functional and highly stacked, a technique for high-density mounting of semiconductor substrates of the same type or different types has been proposed and partially implemented.

A conventional example will be explained based on FIG.

In FIG. 1, a wiring pattern 2 and an external electrode 3 are provided on the upper part of the ceramic substrate 1, and the electrode part of the LSI chip 4 and the - part of the wiring pattern 2 of the ceramic substrate 1 are connected to each other. Internal electrodes (not shown) are arranged to connect the The electrodes of the LSI chip 4 are formed in a convex shape, a so-called bump type, and the bumps and the internal electrodes are directly connected by a "sorisoptinob".

According to this configuration, there are a plurality of the same OΦ on the same board, and 3...
-7 allows different types of LSI chips to be mounted and the LSI chips to be interconnected, making it possible to mount LSIs at a higher density than with conventional configurations.

However, this configuration has the following problems.

That is, since a plurality of LSI chips are two-dimensionally arranged on the same substrate, the substrate area increases as the number of LSIs to be mounted increases.

Also, the electrodes of each chip are connected using wiring,
The presence of wiring capacitance and wiring resistance is an obstacle to high-speed operation.

Purpose of the Invention The present invention was made in view of the above problems, and
The present invention provides a 1' conductor device which connects S4 to each other at high density, realizes a composite multi-functional semiconductor device, and makes it possible to realize higher speed.

Composition of the Invention In order to achieve high density and high speed, the present invention has the main surface of one or more LSI substrates 2 facing the main surface of one LSI substrate 1, and the electrode portions of the LSI substrate 1 and This is an I4 conductor device obtained by directly connecting the desired electrode portions of the LSI substrate 2 and fixing the LSI substrates 1.2 to each other.

DESCRIPTION OF EMBODIMENTS An embodiment of a semiconductor device according to the present invention will be described with reference to FIGS. 2, 3, and 4. Both FIGS. 2 to 4 show cross-sectional views of the semiconductor device of the present invention.

First, in FIG. 1, functional elements such as transistors and resistors are integrated and formed on the main surface of a semiconductor substrate 1, and a surface protection film 2 is further formed on the main surface of the substrate. Further, the electrode 3 constituting the input/output terminal for electrical signals to the substrate is formed in a convex shape, so-called bump type, after a part of the surface protection film 2 is removed. Next, functional elements are integrated on the main surface of the semiconductor substrate 4, and a surface protection film 5 and an electrode 6 are provided on the main surface. Here, the main surface of the semiconductor substrate 4 is placed to face the main surface of the semiconductor substrate 1, and furthermore, the electrode 6 of the semiconductor substrate 4 is electrically connected to the electrode 3 of the semiconductor substrate 1. Here, the electrodes are connected to each other using solder, and this can be easily achieved by applying solder plating to the electrode 6, - · portion when forming the electrode, and heating it when connecting. Furthermore, if necessary, it is also possible to take out the leads outside the semiconductor device. In this embodiment, this is achieved by connecting the metal lead wires 7 at the same time when the electrodes are connected to each other.

After connecting the electrodes as described above, the semiconductor substrate 1
and 2 are fixed to each other. In this embodiment, epoxy resin 8 is applied to the side surfaces of the substrates and the gaps between the substrates, and the substrates are solidified and bonded.

According to this method, high-density multifunctionalization can be realized without increasing the board area due to stacking LSIs of the same type or different types.

In this embodiment, a new lead wire was provided for connection to the outside of the semiconductor device, but the present invention allows connection to the outside without providing a new lead wire.

In FIG. 3, the semiconductor substrate 4 placed opposite the semiconductor substrate 1 is arranged so as not to be placed on at least the external connection electrode 3' of the electrodes of the semiconductor substrate 1.

Thereafter, desired connection electrodes 3 and 6 are connected, and the substrates are bonded and fixed to each other with epoxy resin 8. According to the above method, the external connection type $3' is exposed and can be connected to the outside. In this example, A is connected by wire bonding.
It is connected to the outside via a 71 line 9.

In the above embodiments, one semiconductor substrate is connected to one semiconductor substrate, but it is also possible to connect a plurality of semiconductor substrates to one semiconductor substrate.

In FIG. 4, semiconductor substrates 4, 4', 4 are placed facing the main surface of the semiconductor substrate 1, desired electrodes are electrically connected to each other, and the substrates are also bonded with adhesive (in this embodiment). It is fixed with epoxy resin). According to this example, various devices (LSIs) or various types can be mounted on the same semiconductor substrate, and a semiconductor device having multiple functions can be realized at high density. For example, a CPU LSI, an input/output LSI, and a memory LSI.
It is also possible to form SI, sensor devices, etc. on the same substrate.

7 Effects of the Invention The 1' conductor device of the present invention has 14 conductor substrate phases r, 1-
The inter-substrate electrode phases 41',
Since the wires are directly connected to each other, it is possible to realize a high-density multi-layer conductor device, and furthermore, the wiring resistance and wiring field can be significantly reduced, making high-speed operation possible.

Also, according to the present invention, since the active area of the conductor 1' (i) becomes deeper from the surface of the conductor device or the back surface of C1, α
It is also possible to significantly reduce soft errors that occur on lines.

[Brief explanation of drawings]

Is Figure 1 conventional? 1', which shows the structure of the conductor device, and FIGS. 2, 3, and 4 are sectional views of the semiconductor device according to the embodiments of the present invention, respectively. 1.4...N4 conductor board, 3,6...electrode, 7...lead wire, 8... -epoxy resin, 9...A7! line. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure? Figure 2

Claims (1)

[Claims] On the main surface of the first) 1' conductor substrate having the functional element and the electrode part, at least another one having the functional element integrated therein and having the electrode part.
A conductor device (1) is constructed by placing the main surfaces of two second semiconductor substrates t facing each other, connecting desired electrodes of the first and second substrates to each other, and fixing the substrates to each other.