JPH04242939A - Packaging structure of semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a flexibility which can respond to a composite substrate or a stepped substrate and to enable packaging of small size and high density by providing connection electrode pads of a semiconductor device with a plurality of bump electrodes different in height. CONSTITUTION:A connection electrode 12 is arranged on the surface of a substrate 11, and this connection electrode 12 is connected to a flexible printed circuit(FPC)13 as the input-output signal bus line by means of an anisotropic conductive film 14. The FPC 13 consists of an insulating layer 13b and connection wiring layers 13a, 13c formed on both faces of this insulating layer 13b. Further, solder on the tip 25b of a bump electrode 25 of a semiconductor device 2 of bump electrodes different in height is melted to connect a semiconductor chip 21 having bump electrodes 25 to the connection electrode 21 and the FPC 13 on the substrate 11. Therefore, this can respond to steps developed by mounting other components on the substrate and enables small-sized, high-density packaging. It is possible to make not only packaging on the substrate surface, but also further connection from above components packaged on the substrate.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a mounting structure for electrically connecting a semiconductor device having protruding electrodes to a substrate on which connection electrodes are arranged, and a manufacturing method for forming this mounting structure. It is.

0002

[Prior Art] In recent years, face-down bonding, in which semiconductor devices are mounted with the element forming side facing down, has been widely adopted in order to cope with the mounting method that requires a small mounting area and thin mounting thickness for mounting semiconductor devices. ing. Common face-down bonding methods include the flip-chip bonding (hereinafter referred to as FC) method and the chip-on-glass (hereinafter referred to as COG) method in which the semiconductor device is mounted on a glass substrate. It is characterized by having the following.

Face-down bonding will be explained below based on FIGS. 6 and 7. FIG. 6(a) is a cross-sectional view showing a protruding electrode of a semiconductor device mounted by the FC method.
FIG. 6(b) is a cross-sectional view showing a mounting structure connected by the FC method, FIG. 7(a) is a cross-sectional view showing a protruding electrode of a semiconductor device mounted by the COG method, and FIG. 7(b) is a cross-sectional view showing a mounting structure connected by the FC method. FIG. 7C is a cross-sectional view showing a mounting structure connected by a COG method using an anisotropic conductive adhesive, and FIG. 7C is a cross-sectional view showing a mounting structure connected by a COG method using an anisotropic conductive adhesive. Hereinafter, the explanation will be made using FIG. 6 and FIG. 7 alternately.

First, the structure of the protruding electrode will be explained. Figure 6 (a
) and FIG. 7A, a protective film 23 is formed so that the connection electrode pad 22 made of aluminum provided on the semiconductor element forming surface of the semiconductor device 21 is exposed through the opening. Further, a common electrode film 24 is formed on the connection electrode pad 22 for adhesion to the connection electrode pad 22 and for prevention of diffusion. Further, a protruding electrode 25 is formed by a plating method or a vacuum evaporation method. The protruding electrode 25 of the semiconductor device mounted by the FC method shown in FIG. 6A uses a protruding electrode made of solder. Further, the protruding electrode 25 of the semiconductor device mounted by the COG method shown in FIG. 7A uses a protruding electrode 25 made of metal such as copper or gold.

Next, a method of connecting a semiconductor device and a substrate will be described using the protruding electrodes described with reference to FIGS. 6(a) and 7(a).

A connection method using the FC method will be explained using FIG. 6(b). In connection using the FC method, alignment is performed using the outer shape of the semiconductor device 21, and then the protruding electrodes 2 made of solder are connected.
5 is melted by heat, and the connecting electrode 12 formed on the substrate 11 is connected to the semiconductor substrate 21 on which the protruding electrode 25 is formed.

A connection method using the COG method will be explained using FIG. 7(b). For connection in the COG method, conductive adhesive 27, which is an epoxy adhesive mixed with conductive particles, is applied to the tip of the protruding electrode 25 of the semiconductor device 21 by dipping or printing, and the semiconductor device is inspected using a binocular microscope or the like. 21 and board 1
1, and the protruding electrode 25 is connected to the connecting electrode 12 formed on the substrate 11 made of glass.

Furthermore, the conductive adhesive 2 shown in FIG. 7(a)
7, there is a connection method using an anisotropic conductive adhesive 28 which has conductivity in the thickness direction but not in the lateral direction. Figure 7 shows the connection method using this anisotropic conductive adhesive.
Shown in (c). The anisotropic conductive adhesive 28 is composed of a main material 28a made of an insulating material, conductive particles 28b having elasticity, and non-conductive particles 28c having a slightly smaller particle size than the conductive particles 28b. This anisotropic conductive adhesive 28 is applied to the substrate 11 made of glass on which the connection electrodes 12 are formed by a printing method, and the semiconductor device 21 having the protruding electrodes 25 shown in FIG. 7(a) is bonded to the substrate 11 by thermocompression. do.

[0009]

[Problems to be Solved by the Invention] The face-down bonding method explained using FIGS. 6 and 7 is based on the premise that a semiconductor device is mounted on a flat substrate, and is designed so that no steps are formed on the substrate. is being carried out. In order to make the mounting structure compact and high-density under these circumstances,
This has been addressed by miniaturizing the connection wiring pitch and reducing the number of parts mounted on the board. Although advances in packaging technology have led to steady increases in density, this method has its limits.

[0010] In order to solve this problem, the object of the present invention is to
A mounting structure for semiconductor devices that is flexible enough to accommodate composite boards with multiple components mounted, boards with steps, etc., and that also allows for compact and high-density mounting, as well as manufacturing to form this structure. The purpose is to provide a method.

[0011]

Means for Solving the Problems In order to achieve the above object, the present invention employs the structure described below and a manufacturing method for forming this structure.

[0012] A plurality of protruding electrodes having different heights are provided on the connection electrode pads of the semiconductor device to cope with differences in level caused by mounting other components on the substrate.

A process of forming a protective film on the entire surface of the semiconductor element formation surface of the semiconductor device, forming an opening on the connection electrode pad by photolithography and etching, forming a common electrode film on the entire surface, and plating the entire surface. A process of forming a resist and forming an opening in the formation area of a tall protruding electrode, a process of forming a pedestal part of the protruding electrode by plating and removing the plating resist, and a process of placing a metal mask on the semiconductor device. , forming solder in the region where the protruding electrode is to be formed in the opening of the metal mask, performing heat treatment and rolling the solder to form a tip of the protruding electrode, and etching the common electrode film using the protruding electrode as a mask.

A process of forming a protective film on the entire surface of the semiconductor element formation surface of the semiconductor device, forming an opening on the connection electrode pad by photolithography and etching, and forming a common electrode film on the entire surface; A step of forming a first plating resist and forming an opening in the formation area of a tall protruding electrode, a step of forming a pedestal part of the protruding electrode by a plating method and removing the first plating resist, and a step of forming the first plating resist on the entire surface. Second
forming a plating resist, forming an opening in the region where the protruding electrode is to be formed, forming the tip of the protruding electrode by plating, removing the second plating resist, and etching the common electrode film using the protruding electrode as a mask. Has a process.

A protective film is formed on the entire surface of the semiconductor element forming surface of the semiconductor device, an opening is formed on the connection electrode pad by photolithography and etching, a common electrode film is formed on the entire surface, and a photosensitive film is further formed on the entire surface. form a resist,
A process of forming an opening in the formation area of a tall protruding electrode by photolithography, a process of forming a metal film that will become a pedestal part of the protruding electrode on the entire surface, and a process of removing the photosensitive resist to form an opening on the photosensitive resist. A process of removing the metal film formed in the photosensitive resist and forming a pedestal part of the protruding electrode in the opening of the photosensitive resist, placing a metal mask on the semiconductor device, and forming solder in the area where the protruding electrode is to be formed in the opening of the metal mask. The method also includes the steps of performing heat treatment and rolling the solder to form the tips of the protruding electrodes, and etching the common electrode film using the protruding electrodes as a mask.

A protective film is formed on the entire surface of the semiconductor element forming surface of the semiconductor device, an opening is formed on the connection electrode pad by photolithography and etching, a common electrode film is formed on the entire surface, and a photosensitive film is further formed on the entire surface. form a resist,
The process of forming an opening in the formation area of a tall protruding electrode by photolithography, the process of forming a metal film that will become the pedestal part of the protruding electrode on the entire surface, and the process of removing the photosensitive resist. A process of removing the metal film formed above and forming a pedestal part of the protruding electrode in the opening of the photosensitive resin, forming a plating resist on the entire surface, forming an opening in the area where the protruding electrode is to be formed, and plating. to form the tip of the protruding electrode, remove the plating resist,
and etching the common electrode film using the protruding electrode as a mask.

[0017]

Embodiments Hereinafter, embodiments of the present invention will be explained based on the drawings. A first embodiment of the present invention is shown in FIGS. 1 and 2.
This will be explained using FIG. 1 is a cross-sectional view showing a mounting structure of a semiconductor device in a first embodiment, and FIG. 2 is a cross-sectional view for explaining a method of forming protruding electrodes having different heights.

First, a mounting structure of the present invention is shown in FIG. A connection electrode 12 is arranged on the surface of the substrate 11, and this connection electrode 12
and a flexible printed circuit (hereinafter referred to as FPC) 13 as an input/output signal bus line are connected using an anisotropic conductive film 14. The FPC 13 is composed of an insulating layer 13b and connection wiring layers 13a and 13c formed on both sides of the insulating layer 13b. Further, the solder on the tips 25b of the protruding electrodes 25 of the semiconductor device 21 having protruding electrodes of different heights is melted, and the semiconductor device 21 having the protruding electrodes 25 is connected to the connecting electrode 12 on the substrate 11 and the FPC1.
Connect to 3.

FIG. 2(d) shows the structure of a semiconductor device in which protruding electrodes of different heights are formed. In the semiconductor device 21 having protruding electrodes of different heights, a protective film 23 is provided so that the connection electrode pad 22 on the semiconductor element forming surface is exposed through the opening, and a common electrode film 24 is provided on the surface of the connection electrode pad 22. Furthermore, protruding electrodes 25 having different heights depending on the height difference of the substrate are provided on the common electrode film 24. The tall protruding electrode has a two-layer structure including a pedestal portion 25a and a tip portion 25b, and the short protruding electrode has a tip portion 25b only.

Next, a manufacturing method for forming the mounting structure of the semiconductor device according to the present invention explained using FIG. 1 will be explained using FIG. 2. The method for forming protruding electrodes of different heights is to first form a protective film 23 on the entire surface of the semiconductor device 21 including the connecting electrode pads 22 made of aluminum provided on the semiconductor element forming surface of the semiconductor device 21, as shown in FIG. 2(a). . This protective film 23 generally uses an inorganic film such as a silicon dioxide film containing phosphorus, a silicon nitride film, an organic film such as a polyimide resin, or a laminated structure of these inorganic films and organic films. The thickness of the protective film 23 is 1 to 5 μm. Thereafter, the protective film 23 is opened so that the connection electrode pad 22 is exposed by photolithography and etching, which includes exposure and development using a predetermined mask.

Furthermore, a multilayer film of metals such as aluminum, chromium, copper, nickel, titanium, etc. is formed as a common electrode film 24 on the entire surface of the semiconductor device 21 to a thickness of 0.1 to 10 μm using a method such as sputtering or vacuum evaporation. to form.

Next, as shown in FIG. 2(b), a plating resist 26 made of photosensitive resin is applied to a thickness of 1 to 10 μm, and is applied by photolithography onto the connection electrode pad 22 on which a high protruding electrode is to be formed. Provide an opening.

Next, as shown in FIG. 2(c), a pedestal portion 25a of the protruding electrode 25 made of metal such as copper or gold is formed by plating. The thickness of the plating layer on this pedestal portion 25a is made the same as the step thickness of the substrate. Thereafter, the plating resist 26 that is no longer needed is removed.

Next, as shown in FIG. 2(d), using a metal mask, solder made of lead and tin, which will become the tip 25b of the protruding electrode 25, is applied to a thickness of 50 to 100 μm by vacuum evaporation. On the pedestal portion 25a and the connection electrode pad 22
It is formed on the common electrode film 24 of. After that, flux is applied and heat treatment is performed on the tip portion 25b of the protruding electrode 25.
Rounding is performed to make it into a semicircular sphere.

Another method for forming the tip portion 25b of the protruding electrode 25 will be described next. After forming the pedestal portion 25a shown in FIG. 2(c), a second plating resist is applied to the entire surface, an opening is formed on the connection electrode pad 22 by photolithography, and the common electrode film 24 is used as the plating electrode. The tip portion 25b of the protruding electrode 25 made of solder is thus formed. After that, the second plating resist that is no longer needed is removed. Furthermore, after that, the common electrode film 24 is removed by etching using the protruding electrode 25 as an etching mask, and the protruding electrodes 2 with different heights shown in FIG. 2(d) are removed.
5 is formed.

In the above explanation, there are two types of protruding electrodes, high and low, but three or more types of protruding electrodes with different heights may be provided. The method for forming this protruding electrode will be described below. After forming the pedestal portion 25a of the protruding electrode 25 shown in FIG. 2(c), the pedestal portion 2
The plating resist 26 used to form the semiconductor device 21 is not removed, and a new plating resist is applied to the entire surface of the semiconductor device 21. After that, by photolithography that performs exposure and development using a predetermined mask, the highest protrusion electrode formation region is opened, and the protrusion electrode formation regions other than the highest protrusion electrode formation region are opened. Form to cover. Thereafter, a plating process is performed to form a pedestal portion 25a of the protruding electrode 25, and the thickness of the pedestal portion 25a is increased. In this way, by repeating the process of forming the plating resist 26 and the plating process, the pedestal portions 25a of the protruding electrodes 25 having a plurality of heights are formed. After this, Figure 2(d)
As explained above, the tip portion 25b of the protruding electrode 25 is formed by vacuum evaporation or plating using a metal mask.
By forming a plurality of protruding electrodes having different heights, it is possible to form a plurality of protruding electrodes having different heights.

Furthermore, as shown in FIG. 3, it is possible to form protruding electrodes of different heights using a lift-off method. First, as shown in FIG. 3A, a protective film 23 is formed on the entire surface of the semiconductor device 21 including the connection electrode pads 22 made of aluminum provided on the surface on which the semiconductor elements are formed. This protective film 23 generally uses an inorganic film such as a silicon dioxide film containing phosphorus, a silicon nitride film, an organic film such as a polyimide resin, or a laminated structure of these inorganic films and organic films. The thickness of this protective film 23 is 1 to 5 μm. Thereafter, the protective film 23 is opened so that the connection electrode pad 22 is exposed by photolithography using a predetermined mask to perform exposure and development processing, and by etching.

Furthermore, a multilayer film of metals such as aluminum, chromium, copper, nickel, and titanium is formed as a common electrode film 24 on the entire surface of the semiconductor device 21, each having a thickness of 0.1 to 10 μm, using a sputtering method, a vacuum evaporation method, etc. Form by method.

Thereafter, a photosensitive resist 33 made of a photosensitive resin is applied to the entire surface, and an opening is formed by photolithography on the connection electrode pad 22 where a high protruding electrode is to be formed. The film thickness of the photosensitive resist 33 is made the same as the step thickness of the substrate.

Next, as shown in FIG. 3(b), the pedestal portion 2 of the protruding electrode 25 with a high height is formed on the entire surface of the semiconductor device 21.
A metal film 19 made of copper or the like to be 5a is formed to have approximately the same thickness as the photosensitive resist 33.

Next, as shown in FIG. 3C, the metal film 19 formed on the photosensitive resist 33 is removed by lift-off, which removes the photosensitive resist 33 below the metal film 19 using a resist stripping solution. By removing the photosensitive resist 33, the pedestal portion 2 of the protruding electrode 25 is formed in the formation region of the protruding electrode 25 with a high height inside the opening of the photosensitive resist 33.
5a is formed.

Next, as shown in FIG. 3(d), using a metal mask, solder made of lead and tin, which will become the tip 25b of the protruding electrode 25, is applied to a thickness of 50 to 100 μm by vacuum evaporation. It is formed on the pedestal portion 25a and the common electrode film 24 of the connection electrode pad 22. Thereafter, flux is applied and heat treatment is performed to round the tip portion 25b of the protruding electrode 25 into a semicircular shape.

Another method for forming the tip 25b of the protruding electrode 25 will now be described. Protruding electrode 2 shown in FIG. 3(c)
After forming the pedestal portion 25a of No. 5, a plating resist is applied, and an opening is provided on the connection electrode pad 22 by photolithography. Thereafter, using the common electrode film 24 as an electrode, the tip portion 2 of the protruding electrode 25 made of solder is formed by plating.
Form 5b. Thereafter, the plating resist 26 that is no longer needed is removed. Furthermore, after that, the common electrode film 24 is removed using the protruding electrode 25 as an etching mask, and as shown in FIG.
A semiconductor device 21 having protruding electrodes 25 of different heights as shown in FIG. 3(d) is formed.

The substrate 11 shown in FIG. 1 is made of an organic material such as paper phenol or paper epoxy, an inorganic material such as alumina ceramic or crystallized glass, or an organic/inorganic material such as glass epoxy. A plating resist made of photosensitive resin is formed on the surface of this substrate 11, and patterned by photolithography. Thereafter, a metal such as copper, silver, or gold is formed by electroless plating to a thickness of 10 to 200 μm, and the unnecessary plating resist is removed to form the connection electrode 12. It is also possible to form the metal material by vacuum evaporation, sputtering, etc., then apply a photosensitive resin, and form the connection electrode 12 by photolithography and etching.

The FPC 13 shown in FIG. 1 has an insulating layer 1 made of an organic material such as polyimide or polyester.
A plating resist made of a photosensitive resin is patterned by photolithography on both sides of 3b, and metals such as copper, silver, and gold are formed by electroless plating. After that, the unnecessary plating resist is removed and the connection wiring layers 13a, 1
Form 3c. The thickness of the insulating layer 13b of the FPC 13 is
The thickness of the connection wiring layers 13a and 13c is generally 10 to 50 μm.

Next, a connection method using the anisotropic film 14 and a connection method of the semiconductor device 21 shown in FIG. 1 will be explained. The anisotropic conductive film 14 is fixed to the connection wiring layer 13c of the FPC 13 and pre-baked. Thereafter, the connection electrode 12 disposed on the substrate 11 and the FPC 13 to which the anisotropic conductive film 14 is temporarily fixed are connected by thermocompression bonding to establish electrical connection. Further, the semiconductor device 21 equipped with protruding electrodes having different heights corresponding to the thickness of the FPC 13 is heated to melt the solder on the tips 25b of the protruding electrodes 25. The electrode 12 and the low protruding electrode are electrically connected to the connection electrode layer 13a of the FPC 13, resulting in the structure shown in FIG.

A second embodiment of the semiconductor device mounting structure of the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing a mounting structure of a semiconductor device according to a second embodiment of the present invention. A recess 32 large enough to accommodate the second semiconductor device 31b is provided in the substrate 11 on which the connection electrode 12 is disposed, and the second semiconductor device 31b is fixed using an adhesive 15. The depth of the recess 32 provided in the substrate 11 is the same as that of the second semiconductor device 3.
Ideally, the thickness should be the same as that of 2b, and the mounting surface should be flat.

However, since the thinnest substrate 11 is used to reduce the mounting thickness, there is a limit to the depth of the recess 32 due to the strength of the substrate. Therefore, it is difficult to completely flatten the mounting surface, and a step is generated on the surface of the substrate 11.

Second semiconductor device 31b housed in recess 32
In this method, a protective film 23 is provided so that the connection electrode pad 22 on the semiconductor element forming surface is exposed through the opening, and the connection electrode pad 22
It has a common electrode film 24 and an external connection electrode 29 on its surface. The solder on the tips 25b of the protruding electrodes 25 formed on the first semiconductor device 31a having protruding electrodes of different heights is melted, and the connecting electrodes 12 on the substrate 11 are bonded to the connecting electrodes 12 on the substrate 11.
It is connected to the external connection electrode 29 of the second semiconductor device 31b housed in the first recess 32. Furthermore, the recess 3 of the substrate 11
External connection electrode 2 of the second semiconductor device 31b housed in
9 and a connection electrode 12 disposed on the substrate 11 are bonded together using a metal wire 16.

Next, a manufacturing method for forming the semiconductor device mounting structure shown in FIG. 4 will be described. The method for forming the substrate 11 and the method for manufacturing the connection electrode 12 on this substrate 11 are as follows:
This is similar to the first embodiment. The recess 32 that accommodates the second semiconductor device 31b is formed by a method such as etching or mechanical processing. The second recess 32 provided in the substrate 11 is
The semiconductor device 31b is fixed by dispensing an adhesive 15 made of a conductive adhesive in which conductive particles such as silver are mixed into an epoxy adhesive or an insulating adhesive such as epoxy. This is done by applying the adhesive to the bottom surface, then mounting the second semiconductor device 31b, and curing the adhesive 15.

The second semiconductor device 31b to be accommodated in the recess 32 of the substrate 11 is constructed by connecting the connecting electrode pad 22 and the protective film in the same way as the semiconductor device having protruding electrodes of different heights as described in the first embodiment. 23 and a common electrode film 24 are respectively formed. Furthermore, connect the plating resist to electrode pad 2
An external connection electrode 29 made of metal such as gold or copper is formed with a thickness of 1 to 20 μm by plating.

The method for forming the first semiconductor device 31a having protruding electrodes of different heights is the same as in the first embodiment, in which the first semiconductor device 31a is heated to form the tips 25 of the protruding electrodes.
Melt the solder in b. As a result, the taller protruding electrodes are connected to the connection electrodes 12 arranged on the substrate 11, and the lower protruding electrodes are connected to the second electrodes placed in the recesses 32 provided on the substrate 11.
connected to the external connection electrode 29 of the semiconductor device 31b,
Make electrical connections to each.

[0043] Further, a first electrode having protruding electrodes of different heights
External connection electrode 29 of the second semiconductor device 31b housed in the recess 32 of the substrate 11 that is not connected to the semiconductor device 31a.
The mounting structure shown in FIG. 4 is formed by bonding a connection electrode 12 disposed on a substrate 11 and a metal wire 16 made of metal such as gold, silver, or copper.

A third embodiment of a semiconductor device having protruding electrodes of different heights according to the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view showing a mounting structure of a semiconductor device according to a third embodiment of the present invention. FIG. 5 shows a structure in which the connection electrode 12 disposed on the substrate 11 and the semiconductor device 21 are connected using an anisotropic conductive adhesive 28. The semiconductor device 21 includes a resistance element 30 formed in a semiconductor element formation region, and has a plurality of protruding electrodes 25 having different heights. The anisotropic conductive adhesive 28 is composed of a main material 28a, conductive particles 28b, and non-conductive particles 28c.

The mounting structure shown in FIG. 5A uses anisotropic conductivity so that only the taller protruding electrodes of the protruding electrodes 25 formed on the semiconductor device 21 are connected to the connecting electrodes 12 disposed on the substrate 11. The size of the conductive particles 28b of the adhesive 28 is selected. Furthermore, the mounting structure shown in FIG. 5(b) has the semiconductor device 2
5(a) so that both of the protruding electrodes 25 formed in FIG.
Conductive particles 28b larger than the conductive particles 28b of the anisotropic conductive adhesive 28 are selected.

Next, a manufacturing method for manufacturing the mounting structure of the semiconductor device 21 using the anisotropic conductive adhesive 28 described using FIG. 5 will be described. A resistance element 30 is formed in a semiconductor element formation region of the semiconductor device 21 using an impurity diffusion layer or a polysilicon layer. High-height protruding electrodes at both ends of the resistive element 30 and low-height protruding electrodes at the center of the resistive element 30 are formed using the same manufacturing method as in the first embodiment. The method of forming the substrate 11 and the method of manufacturing the connection electrode 12 disposed on the substrate 11 are also the same as in the first embodiment.

The anisotropic conductive adhesive 28 includes a main agent 28a,
It is composed of conductive particles 28b and non-conductive particles 28c. Main agent 2
8a is made of an inorganic material such as glass paste, or an organic material such as epoxy resin or polyester resin. The conductive particles 28b are formed by plating one or more metals such as nickel, aluminum, gold, and silver onto plastic beads made of an elastic copolymer of styrene and divinylbenzene. The non-conductive particles 28c are made of beads made of an inorganic material such as glass fiber or metal oxide, or a hard organic material such as polymethyl methacrylate.

The anisotropic conductive adhesive 28 is formed by mixing the main material 28a with conductive particles 28b and non-conductive particles 28c by roll kneading. By a printing method, an appropriate amount of anisotropic conductive adhesive 28 is applied to the substrate 11 on which the connection electrode 12 is arranged, and pre-baked at a temperature of about 80°C. Thereafter, semiconductor devices 21 having protruding electrodes of different heights are placed on the substrate 11, and connections are made while applying pressure at a temperature of 120 to 150°C.

The size of the conductive particles 28b of the anisotropic conductive adhesive 28 is adjusted to the diameter of the non-conductive particles 28c on the pedestal portion 2 of the protruding electrode.
FIG. 5(a) shows a mounting structure in the case of using a device smaller than the dimension including the height of 5a. The protruding electrodes with a low height are not electrically connected to the connection electrodes 12 disposed on the substrate 11, and only the protruding electrodes with a high height are electrically connected to the connection electrodes 12. As a result, the resistance between the connection electrodes 12 arranged on the substrate 11 becomes the resistance element 30 formed in the semiconductor element region.

[0050] Also, the conductive particles 28b of the anisotropic conductive adhesive 28
FIG. 5B shows a mounting structure in which the size is larger than the sum of the diameter of the non-conductive particles 28c and the height of the pedestal portion 25a of the protruding electrode. Both the short protruding electrode and the high protruding electrode are electrically connected to the connection electrode 12 disposed on the substrate 11. As a result, the resistance between the connection electrodes 12 arranged on the substrate 11 becomes one-half that of the resistance element 30 formed in the semiconductor element region when a low-height protruding electrode is provided at the center of the resistance element 30. By selecting the size of the conductive particles 28b of the anisotropic conductive adhesive 28 in this way, it is possible to select a circuit having an arbitrary resistance value at the time of mounting.

A semiconductor device in which protruding electrodes of different heights and conductive particles of different sizes are combined can be applied not only to the resistive element described using FIG. 5 but also to a capacitive element.

[0052]

[Effects of the Invention] In the mounting structure and manufacturing method using a semiconductor device having protruding electrodes of different heights according to the present invention,
Since it can accommodate steps created by mounting other components on the board, it enables compact, high-density mounting. Furthermore, it is now possible to connect not only on the surface of the board, but also on top of the components mounted on the board, making it possible to provide an unprecedented compact and high-density mounting structure and manufacturing method for semiconductor devices. Effects can be obtained.

Furthermore, when semiconductor devices having protruding electrodes of different heights are connected using an anisotropic conductive adhesive, the conductive particles of the anisotropic conductive adhesive are connected even though the same semiconductor devices are used. By changing the size, it becomes possible to select the internal circuit of the semiconductor device. This can be applied to trimming technology. Conventionally, the characteristics of semiconductor devices were inspected, and passive components such as resistive elements and capacitive elements were trimmed by soldering or laser, or controlled by internal memory based on the results. Data writing work is required. According to the present invention, the user can select the size of the conductive particles of the anisotropic conductive adhesive at the final stage of attaching the semiconductor device to the board, and select an arbitrary electric circuit, thereby reducing cost and work. is a simple method with great effects.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing a mounting structure of a semiconductor device in a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating, in order of steps, a method for manufacturing a semiconductor device having protruding electrodes of different heights used in the present invention.

FIG. 3 is a cross-sectional view showing, in order of steps, a manufacturing method in another embodiment of a semiconductor device having protruding electrodes of different heights used in the present invention.

FIG. 4 is a sectional view showing a mounting structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a third embodiment of the semiconductor device mounting structure of the present invention.

FIG. 6 is a cross-sectional view for explaining a conventional flip chip bonding method.

FIG. 7 is a cross-sectional view for explaining a conventional chip-on-glass method.

[Explanation of symbols]

11 Board 12 Connection electrode 21 Semiconductor device 22 Connection electrode pad 23 Protective film 24 Common electrode film 25 Protruding electrode

Claims (5)

[Claims] 1. A mounting structure for a semiconductor device, comprising a plurality of protruding electrodes having different heights on connection electrode pads of the semiconductor device. 2. A step of forming a protective film on the entire surface of the semiconductor element forming surface of the semiconductor device, forming an opening on the connection electrode pad by photolithography and etching, and forming a common electrode film on the entire surface; a step of forming a plating resist on the substrate and forming an opening in a region where a high protruding electrode is to be formed; a step of forming a pedestal portion of the protruding electrode by plating and removing the plating resist; and a step of applying a metal mask to the semiconductor device. solder is formed on the protruding electrode formation region of the metal mask opening, heat-treated, the solder is rolled up to form the tip of the protruding electrode, and the common electrode film is formed using the protruding electrode as a mask. 1. A method for manufacturing a semiconductor device, comprising the step of etching. 3. A step of forming a protective film on the entire surface of the semiconductor element forming surface of the semiconductor device, forming an opening on the connection electrode pad by photolithography and etching, and forming a common electrode film on the entire surface; forming a first plating resist and forming an opening in the formation region of the tall protruding electrode; forming a pedestal portion of the protruding electrode by plating, and removing the first plating resist; A second plating resist is formed on the entire surface, an opening is formed in the region where the protruding electrode is to be formed, a tip of the protruding electrode is formed by plating, the second plating resist is removed, and the protruding electrode is used as a mask. A method for manufacturing a semiconductor device, comprising the step of etching the common electrode film. 4. A protective film is formed on the entire surface of the semiconductor element formation surface of the semiconductor device, an opening is formed on the connection electrode pad by photolithography and etching, a common electrode film is formed on the entire surface, and a common electrode film is formed on the entire surface. A step of forming a photosensitive resist and forming an opening in a region where a tall protruding electrode is to be formed by photolithography, a step of forming a metal film that will become a pedestal part of the protruding electrode on the entire surface, and a step of forming the photosensitive resist. removing the metal film formed on the photosensitive resist and forming a pedestal portion of a protruding electrode in the opening of the photosensitive resist; placing a metal mask on the semiconductor device; forming solder in a region in which a protruding electrode is to be formed in a mask opening, performing heat treatment to round the solder to form a tip of the protruding electrode, and etching the common electrode film using the protruding electrode as a mask. A method for manufacturing a semiconductor device, characterized by: 5. A protective film is formed on the entire surface of the semiconductor element forming surface of the semiconductor device, an opening is formed on the connection electrode pad by photolithography and etching, a common electrode film is formed on the entire surface, and a common electrode film is formed on the entire surface. A step of forming a photosensitive resist and forming an opening in a region where a tall protruding electrode is to be formed by photolithography, a step of forming a metal film that will become a pedestal part of the protruding electrode on the entire surface, and a step of forming the photosensitive resist. A step of removing the metal film formed on the photosensitive resist to form a pedestal portion of the protruding electrode in the opening of the photosensitive resin, and forming a plating resist on the entire surface of the protruding electrode. The method is characterized by comprising the steps of forming an opening in a formation region, forming a tip of a protruding electrode by plating, removing the plating resist, and etching the common electrode film using the protruding electrode as a mask. A method for manufacturing a semiconductor device.