JP2004018964A5 - - Google Patents

Claims (14)

(A) a plurality of chip regions each having a plurality of wirings, a plurality of scribe regions adjacent to the chip regions, a plurality of chip regions and a plurality of forbidden regions located outside the plurality of scribe regions; Preparing a semiconductor substrate having:
(B) forming a first insulating film on the chip region so that a part of the wiring is exposed;
(C) forming a first conductive film on the chip region, the scribe region, and the forbidden region;
(D) forming a resist film on the first conductive film so that a part of the first conductive film in the chip region and a part of the first conductive film in the prohibited region are exposed; When,
(E) forming a second conductive film on the first conductive film exposed from the resist film by the step (d);
(F) removing the resist film and the first conductive film overlapping the resist film in a plane;
(G) forming a second insulating film on a part of the second conductive film in the chip region and on the second conductive film in the prohibited region;
(H) forming a bump electrode on the second conductive film exposed from the second insulating film in the chip region;
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the first insulating film is formed by depositing a polyimide resin film after laminating a silicon nitride film and a silicon oxide film. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the first conductive film is formed on the entire surface of the semiconductor substrate. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second conductive film is formed by depositing a nickel film on a copper film. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second conductive film is formed by electroplating. In the manufacturing method of the semiconductor device according to claim 1,
The plurality of wirings are formed at a first interval,
In the step (h), the bump electrodes are formed at a second interval wider than the first interval. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the bump electrode is formed on the second conductive film through an Au film. In the manufacturing method of the semiconductor device according to claim 1,
Before the step (h),
(I) adhering a tape on the second insulating film;
(J) After the step (i), polishing the opposite side of the semiconductor substrate to the side to which the tape is bonded;
A method for manufacturing a semiconductor device, comprising: The method of manufacturing a semiconductor device according to claim 8.
The method for manufacturing a semiconductor device, wherein the tape has an adhesive portion thicker than a total thickness from the wiring to the second insulating film in the chip region. The method of manufacturing a semiconductor device according to claim 8.
The tape has an adhesive portion;
A manufacturing method of a semiconductor device, wherein the bonding portion is filled between the tape and the semiconductor substrate in the scribe region. In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second insulating film is formed along an edge of the surface of the semiconductor substrate. In the manufacturing method of the semiconductor device according to claim 1,
In the step (d), the resist film in the chip region and the resist film in the prohibited region are simultaneously transferred. (A) preparing a semiconductor substrate having a plurality of chip regions, a scribe region located between the chip regions, and an outer periphery of the plurality of chip regions;
(B) forming a first conductive film on the surface of the semiconductor substrate;
(C) forming an insulating film having an opening on the chip region and the first conductive film on the outer periphery;
(D) forming a second conductive film on the first conductive film and in the opening of the insulating film;
A method for manufacturing a semiconductor device, comprising: 14. The method of manufacturing a semiconductor device according to claim 13,
The method of manufacturing a semiconductor device, wherein the second conductive film is formed by electroplating.