JPS6223098Y2 - - Google Patents
Info
- Publication number
- JPS6223098Y2 JPS6223098Y2 JP1979014194U JP1419479U JPS6223098Y2 JP S6223098 Y2 JPS6223098 Y2 JP S6223098Y2 JP 1979014194 U JP1979014194 U JP 1979014194U JP 1419479 U JP1419479 U JP 1419479U JP S6223098 Y2 JPS6223098 Y2 JP S6223098Y2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- npn transistor
- pnp transistor
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000003071 parasitic effect Effects 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 230000000295 complement effect Effects 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979014194U JPS6223098Y2 (fi) | 1979-02-06 | 1979-02-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979014194U JPS6223098Y2 (fi) | 1979-02-06 | 1979-02-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55115066U JPS55115066U (fi) | 1980-08-13 |
JPS6223098Y2 true JPS6223098Y2 (fi) | 1987-06-12 |
Family
ID=28833663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1979014194U Expired JPS6223098Y2 (fi) | 1979-02-06 | 1979-02-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6223098Y2 (fi) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135627A (ja) * | 2008-12-05 | 2010-06-17 | Sharp Corp | 過電圧保護回路 |
JP2010135626A (ja) * | 2008-12-05 | 2010-06-17 | Sharp Corp | 過電圧保護素子 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495281A (fi) * | 1972-04-28 | 1974-01-17 | ||
JPS4936291A (fi) * | 1972-08-02 | 1974-04-04 | ||
JPS5310288A (en) * | 1976-07-15 | 1978-01-30 | Sony Corp | Semiconductor integrated circuit |
-
1979
- 1979-02-06 JP JP1979014194U patent/JPS6223098Y2/ja not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495281A (fi) * | 1972-04-28 | 1974-01-17 | ||
JPS4936291A (fi) * | 1972-08-02 | 1974-04-04 | ||
JPS5310288A (en) * | 1976-07-15 | 1978-01-30 | Sony Corp | Semiconductor integrated circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135627A (ja) * | 2008-12-05 | 2010-06-17 | Sharp Corp | 過電圧保護回路 |
JP2010135626A (ja) * | 2008-12-05 | 2010-06-17 | Sharp Corp | 過電圧保護素子 |
Also Published As
Publication number | Publication date |
---|---|
JPS55115066U (fi) | 1980-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100208632B1 (ko) | 반도체 집적 회로 및 그 제조 방법 | |
JPH037144B2 (fi) | ||
KR100684676B1 (ko) | 반도체 집적 회로 장치 | |
JPH01146352A (ja) | 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造 | |
JPS6223098Y2 (fi) | ||
JPH0654777B2 (ja) | ラテラルトランジスタを有する回路 | |
JP3459532B2 (ja) | 半導体集積回路およびその製造方法 | |
JP3883681B2 (ja) | 半導体集積回路 | |
JPH0475371A (ja) | 半導体集積回路 | |
JP2901275B2 (ja) | 半導体集積回路装置 | |
JPH05291507A (ja) | 拡散抵抗 | |
JPH0440272Y2 (fi) | ||
JPH0440273Y2 (fi) | ||
JP3131694B2 (ja) | パワートランジスタデバイス | |
JPS61107773A (ja) | 半導体装置 | |
JPH0474478A (ja) | ダイオード | |
JPH079385Y2 (ja) | 半導体集積回路装置 | |
JP3343892B2 (ja) | 半導体集積回路 | |
JPS6089960A (ja) | 半導体集積回路装置 | |
JPS6364058B2 (fi) | ||
JPH0337739B2 (fi) | ||
JPS6045051A (ja) | 半導体集積回路 | |
JPS6350870B2 (fi) | ||
JPS6116569A (ja) | 半導体集積回路装置 | |
JPH09116021A (ja) | 半導体集積回路とその製造方法 |