JPS6222526B2 - - Google Patents

Info

Publication number
JPS6222526B2
JPS6222526B2 JP56207157A JP20715781A JPS6222526B2 JP S6222526 B2 JPS6222526 B2 JP S6222526B2 JP 56207157 A JP56207157 A JP 56207157A JP 20715781 A JP20715781 A JP 20715781A JP S6222526 B2 JPS6222526 B2 JP S6222526B2
Authority
JP
Japan
Prior art keywords
basket
quartz
wafer
ring
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56207157A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58108735A (ja
Inventor
Yasuo Uoochi
Mamoru Maeda
Haruo Shimoda
Mikio Takagi
Takeshi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20715781A priority Critical patent/JPS58108735A/ja
Publication of JPS58108735A publication Critical patent/JPS58108735A/ja
Publication of JPS6222526B2 publication Critical patent/JPS6222526B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP20715781A 1981-12-23 1981-12-23 縦型反応管用バスケツト Granted JPS58108735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20715781A JPS58108735A (ja) 1981-12-23 1981-12-23 縦型反応管用バスケツト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20715781A JPS58108735A (ja) 1981-12-23 1981-12-23 縦型反応管用バスケツト

Publications (2)

Publication Number Publication Date
JPS58108735A JPS58108735A (ja) 1983-06-28
JPS6222526B2 true JPS6222526B2 (enExample) 1987-05-19

Family

ID=16535164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20715781A Granted JPS58108735A (ja) 1981-12-23 1981-12-23 縦型反応管用バスケツト

Country Status (1)

Country Link
JP (1) JPS58108735A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189930A (ja) * 1984-03-12 1985-09-27 Toshiba Ceramics Co Ltd ウエハ−保持装置
JPS61183525U (enExample) * 1984-12-26 1986-11-15
JP2961167B2 (ja) * 1988-03-18 1999-10-12 東京エレクトロン株式会社 ボート並びにそれを用いた熱処理装置及び方法
JPH0622980Y2 (ja) * 1988-09-28 1994-06-15 日本エー・エス・エム株式会社 Ｃｖｄ装置における基板支持装置
JPH06818Y2 (ja) * 1989-09-21 1994-01-05 日本エー・エス・エム株式会社 Ｃｖｄ装置のための基板支持装置
US5310339A (en) * 1990-09-26 1994-05-10 Tokyo Electron Limited Heat treatment apparatus having a wafer boat
JPWO2006118215A1 (ja) * 2005-04-28 2008-12-18 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533641Y2 (enExample) * 1977-05-17 1980-08-09
JPS5588323A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58108735A (ja) 1983-06-28

Similar Documents

Publication Publication Date Title
US3183130A (en) Diffusion process and apparatus
JPS6070177A (ja) 化学的蒸着装置
JPS58108735A (ja) 縦型反応管用バスケツト
JPS5588323A (en) Manufacture of semiconductor device
US4802842A (en) Apparatus for manufacturing semiconductor device
JP2002033284A (ja) 縦型ｃｖｄ用ウェハホルダー
JPH06349738A (ja) 縦型減圧ｃｖｄ装置
JP2001267255A (ja) 気相成長装置及び気相成長方法
JPS5878423A (ja) 半導体物品の熱処理方法及びその装置
JPH0222535B2 (enExample)
CN221727084U (zh) 半导体处理治具
JPH0369113A (ja) 半導体製造装置
CN117832156A (zh) 半导体处理用支架装置和半导体处理设备
JPS6342524Y2 (enExample)
JPH05208890A (ja) 半導体単結晶引上装置のルツボ
JP2916235B2 (ja) 半導体ウェハ処理装置
JPH0116511Y2 (enExample)
JPH071775B2 (ja) ヒ−トパイプ式均熱台
JPH06310443A (ja) 気相成長方法及び反応容器
JPH0521582A (ja) ウエハーホルダ
JPS63178519A (ja) 半導体熱処理装置
JPS6112026A (ja) 縦型加熱炉
JPH0648827Y2 (ja) 縦型気相成長装置
JPH0632680Y2 (ja) 半導体製造装置の加熱炉
JPH07278820A (ja) 基板加熱ホルダー支持機構