JPS62216271A - Ｍｉｓ型半導体装置 - Google Patents

Ｍｉｓ型半導体装置

Info

Publication number
JPS62216271A
JPS62216271A JP61296166A JP29616686A JPS62216271A JP S62216271 A JPS62216271 A JP S62216271A JP 61296166 A JP61296166 A JP 61296166A JP 29616686 A JP29616686 A JP 29616686A JP S62216271 A JPS62216271 A JP S62216271A
Authority
JP
Japan
Prior art keywords
semiconductor
sas
current
amorphous
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61296166A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525394B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shunpei Yamazaki
舜平 山崎
Yujiro Nagata
永田　勇二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP61296166A priority Critical patent/JPS62216271A/ja
Publication of JPS62216271A publication Critical patent/JPS62216271A/ja
Publication of JPH0525394B2 publication Critical patent/JPH0525394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Element Separation (AREA)
JP61296166A 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置 Granted JPS62216271A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61296166A JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61296166A JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8897480A Division JPS5713777A (en) 1980-03-03 1980-06-30 Semiconductor device and manufacture thereof

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6103285A Division JP2626704B2 (ja) 1994-04-19 1994-04-19 Ｍｉｓ型半導体装置作製方法
JP6103284A Division JP2785173B2 (ja) 1994-04-19 1994-04-19 Ｍｉｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS62216271A true JPS62216271A (ja) 1987-09-22
JPH0525394B2 JPH0525394B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-12

Family

ID=17830012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61296166A Granted JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS62216271A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326311A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置
JPH06326313A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置およびｍｉｓ型半導体装置作製方法
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7564057B1 (en) 1992-03-17 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an aluminum nitride film
JPH06326311A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置
JPH06326313A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置およびｍｉｓ型半導体装置作製方法

Also Published As

Publication number Publication date
JPH0525394B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-12

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