JPS62213126A - マイクロ波プラズマ処理装置 - Google Patents

マイクロ波プラズマ処理装置

Info

Publication number
JPS62213126A
JPS62213126A JP61055447A JP5544786A JPS62213126A JP S62213126 A JPS62213126 A JP S62213126A JP 61055447 A JP61055447 A JP 61055447A JP 5544786 A JP5544786 A JP 5544786A JP S62213126 A JPS62213126 A JP S62213126A
Authority
JP
Japan
Prior art keywords
microwave
transmission window
plasma
microwave transmission
metal mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61055447A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0521335B2 (enExample
Inventor
Shuzo Fujimura
藤村　修三
Satoshi Mihara
智 三原
Toshimasa Kisa
木佐　俊正
Yasunari Motoki
本木　保成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61055447A priority Critical patent/JPS62213126A/ja
Priority to KR1019870001982A priority patent/KR900003613B1/ko
Priority to DE8787103642T priority patent/DE3783249T2/de
Priority to EP87103642A priority patent/EP0237078B1/en
Publication of JPS62213126A publication Critical patent/JPS62213126A/ja
Priority to US07/462,954 priority patent/US4987284A/en
Publication of JPH0521335B2 publication Critical patent/JPH0521335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP61055447A 1986-03-13 1986-03-13 マイクロ波プラズマ処理装置 Granted JPS62213126A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61055447A JPS62213126A (ja) 1986-03-13 1986-03-13 マイクロ波プラズマ処理装置
KR1019870001982A KR900003613B1 (ko) 1986-03-13 1987-03-05 초단파와 플라즈마간의 개선된 커플링 구조를 가진 하류초단파 플라즈마 처리장치
DE8787103642T DE3783249T2 (de) 1986-03-13 1987-03-13 Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma.
EP87103642A EP0237078B1 (en) 1986-03-13 1987-03-13 Downstream microwave plasma processing apparatus having an improved coupling structure between microwave and plasma
US07/462,954 US4987284A (en) 1986-03-13 1990-01-08 Downstream microwave plasma processing apparatus having an improved coupling structure between microwave plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61055447A JPS62213126A (ja) 1986-03-13 1986-03-13 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS62213126A true JPS62213126A (ja) 1987-09-19
JPH0521335B2 JPH0521335B2 (enExample) 1993-03-24

Family

ID=12998851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61055447A Granted JPS62213126A (ja) 1986-03-13 1986-03-13 マイクロ波プラズマ処理装置

Country Status (5)

Country Link
US (1) US4987284A (enExample)
EP (1) EP0237078B1 (enExample)
JP (1) JPS62213126A (enExample)
KR (1) KR900003613B1 (enExample)
DE (1) DE3783249T2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
JPH02191325A (ja) * 1988-10-31 1990-07-27 Fujitsu Ltd 灰化処理方法および装置
JPH02127031U (enExample) * 1989-03-28 1990-10-19
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777211B2 (ja) * 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルｃｖｄ法による高速成膜方法
DE4126216B4 (de) * 1991-08-08 2004-03-11 Unaxis Deutschland Holding Gmbh Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
JP3231426B2 (ja) * 1992-10-28 2001-11-19 富士通株式会社 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
US5417941A (en) * 1994-01-14 1995-05-23 E/H Technologies, Inc. Microwave powered steam pressure generator
JP3438109B2 (ja) * 1994-08-12 2003-08-18 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
US5714009A (en) * 1995-01-11 1998-02-03 Deposition Sciences, Inc. Apparatus for generating large distributed plasmas by means of plasma-guided microwave power
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US5961851A (en) * 1996-04-02 1999-10-05 Fusion Systems Corporation Microwave plasma discharge device
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
JP3903730B2 (ja) * 2001-04-04 2007-04-11 松下電器産業株式会社 エッチング方法
CN101457338B (zh) * 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
US7968145B2 (en) * 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
CA2897320A1 (en) 2005-07-28 2007-01-28 Nanocomp Technologies, Inc. Systems and methods for formation and harvesting of nanofibrous materials
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
JP5457754B2 (ja) * 2009-08-07 2014-04-02 株式会社日立ハイテクノロジーズ 透過型電極体を用いたプラズマ処理装置
EP3064765A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verbrennungsmotor
EP3064767A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verfahren und zum Einbringen von Mikrowellenenergie in einen Brennraum eines Verbrennungsmotors und Verbrennungsmotor
US10581082B2 (en) 2016-11-15 2020-03-03 Nanocomp Technologies, Inc. Systems and methods for making structures defined by CNT pulp networks
US20210305024A1 (en) * 2020-03-24 2021-09-30 Texas Instruments Incorporated Plasma cleaning for packaging electronic devices
CN112996209B (zh) * 2021-05-07 2021-08-10 四川大学 一种微波激发常压等离子体射流的结构和阵列结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58113377A (ja) * 1981-12-28 1983-07-06 Fujitsu Ltd マイクロ波プラズマ処理装置
JPS5941838A (ja) * 1982-08-31 1984-03-08 Fujitsu Ltd マイクロ波プラズマ装置
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
US4304983A (en) * 1980-06-26 1981-12-08 Rca Corporation Plasma etching device and process
JPS5782955A (en) * 1980-11-12 1982-05-24 Hitachi Ltd Microwave plasma generating apparatus
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS61131454A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd マイクロ波プラズマ処理方法と装置
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58113377A (ja) * 1981-12-28 1983-07-06 Fujitsu Ltd マイクロ波プラズマ処理装置
JPS5941838A (ja) * 1982-08-31 1984-03-08 Fujitsu Ltd マイクロ波プラズマ装置
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device
JPH02191325A (ja) * 1988-10-31 1990-07-27 Fujitsu Ltd 灰化処理方法および装置
JPH02127031U (enExample) * 1989-03-28 1990-10-19

Also Published As

Publication number Publication date
US4987284A (en) 1991-01-22
EP0237078A3 (en) 1989-09-06
DE3783249T2 (de) 1993-04-29
KR900003613B1 (ko) 1990-05-26
KR880011894A (ko) 1988-10-31
EP0237078A2 (en) 1987-09-16
DE3783249D1 (de) 1993-02-11
EP0237078B1 (en) 1992-12-30
JPH0521335B2 (enExample) 1993-03-24

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Legal Events

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EXPY Cancellation because of completion of term