DE3783249T2 - Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma. - Google Patents

Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma.

Info

Publication number
DE3783249T2
DE3783249T2 DE8787103642T DE3783249T DE3783249T2 DE 3783249 T2 DE3783249 T2 DE 3783249T2 DE 8787103642 T DE8787103642 T DE 8787103642T DE 3783249 T DE3783249 T DE 3783249T DE 3783249 T2 DE3783249 T2 DE 3783249T2
Authority
DE
Germany
Prior art keywords
plasma
microwave
processing apparatus
plasma processing
microwaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787103642T
Other languages
German (de)
English (en)
Other versions
DE3783249D1 (de
Inventor
Shuzo C O Fujitsu Lim Fujimura
Toshimasa C O Fujitsu Lim Kisa
Satoru C O Fujitsu Limi Mihara
Yasumari C O Fujitsu Li Motoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3783249D1 publication Critical patent/DE3783249D1/de
Publication of DE3783249T2 publication Critical patent/DE3783249T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE8787103642T 1986-03-13 1987-03-13 Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma. Expired - Fee Related DE3783249T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61055447A JPS62213126A (ja) 1986-03-13 1986-03-13 マイクロ波プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE3783249D1 DE3783249D1 (de) 1993-02-11
DE3783249T2 true DE3783249T2 (de) 1993-04-29

Family

ID=12998851

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787103642T Expired - Fee Related DE3783249T2 (de) 1986-03-13 1987-03-13 Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma.

Country Status (5)

Country Link
US (1) US4987284A (enExample)
EP (1) EP0237078B1 (enExample)
JP (1) JPS62213126A (enExample)
KR (1) KR900003613B1 (enExample)
DE (1) DE3783249T2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777211B2 (ja) * 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
JPH0225577A (ja) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp 薄膜形成装置
JP2790341B2 (ja) * 1988-10-31 1998-08-27 富士通株式会社 灰化処理方法
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JPH0744017Y2 (ja) * 1989-03-28 1995-10-09 住友金属工業株式会社 プラズマアッシング装置
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
US5111111A (en) * 1990-09-27 1992-05-05 Consortium For Surface Processing, Inc. Method and apparatus for coupling a microwave source in an electron cyclotron resonance system
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルｃｖｄ法による高速成膜方法
DE4126216B4 (de) * 1991-08-08 2004-03-11 Unaxis Deutschland Holding Gmbh Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate
US5302803A (en) * 1991-12-23 1994-04-12 Consortium For Surface Processing, Inc. Apparatus and method for uniform microwave plasma processing using TE1101 modes
JP3231426B2 (ja) * 1992-10-28 2001-11-19 富士通株式会社 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
US5417941A (en) * 1994-01-14 1995-05-23 E/H Technologies, Inc. Microwave powered steam pressure generator
JP3438109B2 (ja) * 1994-08-12 2003-08-18 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
US5714009A (en) * 1995-01-11 1998-02-03 Deposition Sciences, Inc. Apparatus for generating large distributed plasmas by means of plasma-guided microwave power
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US5961851A (en) * 1996-04-02 1999-10-05 Fusion Systems Corporation Microwave plasma discharge device
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
JP3903730B2 (ja) * 2001-04-04 2007-04-11 松下電器産業株式会社 エッチング方法
CN101457338B (zh) * 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
US7968145B2 (en) * 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
CA2897320A1 (en) 2005-07-28 2007-01-28 Nanocomp Technologies, Inc. Systems and methods for formation and harvesting of nanofibrous materials
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
JP5457754B2 (ja) * 2009-08-07 2014-04-02 株式会社日立ハイテクノロジーズ 透過型電極体を用いたプラズマ処理装置
EP3064765A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verbrennungsmotor
EP3064767A1 (de) * 2015-03-03 2016-09-07 MWI Micro Wave Ignition AG Verfahren und zum Einbringen von Mikrowellenenergie in einen Brennraum eines Verbrennungsmotors und Verbrennungsmotor
US10581082B2 (en) 2016-11-15 2020-03-03 Nanocomp Technologies, Inc. Systems and methods for making structures defined by CNT pulp networks
US20210305024A1 (en) * 2020-03-24 2021-09-30 Texas Instruments Incorporated Plasma cleaning for packaging electronic devices
CN112996209B (zh) * 2021-05-07 2021-08-10 四川大学 一种微波激发常压等离子体射流的结构和阵列结构

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
US4304983A (en) * 1980-06-26 1981-12-08 Rca Corporation Plasma etching device and process
JPS5782955A (en) * 1980-11-12 1982-05-24 Hitachi Ltd Microwave plasma generating apparatus
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
JPS58113377A (ja) * 1981-12-28 1983-07-06 Fujitsu Ltd マイクロ波プラズマ処理装置
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS5941838A (ja) * 1982-08-31 1984-03-08 Fujitsu Ltd マイクロ波プラズマ装置
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPS61131454A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd マイクロ波プラズマ処理方法と装置
JPS61174639A (ja) * 1985-01-28 1986-08-06 Semiconductor Energy Lab Co Ltd 光エツチング方法

Also Published As

Publication number Publication date
US4987284A (en) 1991-01-22
EP0237078A3 (en) 1989-09-06
KR900003613B1 (ko) 1990-05-26
KR880011894A (ko) 1988-10-31
EP0237078A2 (en) 1987-09-16
JPS62213126A (ja) 1987-09-19
DE3783249D1 (de) 1993-02-11
EP0237078B1 (en) 1992-12-30
JPH0521335B2 (enExample) 1993-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee