JPS62191500A - 砒化ガリウム化合物半導体単結晶の製造方法 - Google Patents

砒化ガリウム化合物半導体単結晶の製造方法

Info

Publication number
JPS62191500A
JPS62191500A JP61032880A JP3288086A JPS62191500A JP S62191500 A JPS62191500 A JP S62191500A JP 61032880 A JP61032880 A JP 61032880A JP 3288086 A JP3288086 A JP 3288086A JP S62191500 A JPS62191500 A JP S62191500A
Authority
JP
Japan
Prior art keywords
single crystal
boat
gaas
compound
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61032880A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357078B2 (enExample
Inventor
Tetsuya Inoue
哲也 井上
Takashi Shimoda
下田　隆司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP61032880A priority Critical patent/JPS62191500A/ja
Publication of JPS62191500A publication Critical patent/JPS62191500A/ja
Publication of JPH0357078B2 publication Critical patent/JPH0357078B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP61032880A 1986-02-19 1986-02-19 砒化ガリウム化合物半導体単結晶の製造方法 Granted JPS62191500A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61032880A JPS62191500A (ja) 1986-02-19 1986-02-19 砒化ガリウム化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61032880A JPS62191500A (ja) 1986-02-19 1986-02-19 砒化ガリウム化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS62191500A true JPS62191500A (ja) 1987-08-21
JPH0357078B2 JPH0357078B2 (enExample) 1991-08-30

Family

ID=12371188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61032880A Granted JPS62191500A (ja) 1986-02-19 1986-02-19 砒化ガリウム化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS62191500A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02229797A (ja) * 1989-03-02 1990-09-12 Hitachi Cable Ltd 低転位密度ガリウム砒素単結晶の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121195A (ja) * 1982-12-28 1984-07-13 Sumitomo Electric Ind Ltd 半絶縁性砒化ガリウム結晶

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121195A (ja) * 1982-12-28 1984-07-13 Sumitomo Electric Ind Ltd 半絶縁性砒化ガリウム結晶

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02229797A (ja) * 1989-03-02 1990-09-12 Hitachi Cable Ltd 低転位密度ガリウム砒素単結晶の製造方法

Also Published As

Publication number Publication date
JPH0357078B2 (enExample) 1991-08-30

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