JPS62190771A - 電界効果トランジスタの製造方法 - Google Patents
電界効果トランジスタの製造方法Info
- Publication number
- JPS62190771A JPS62190771A JP3326586A JP3326586A JPS62190771A JP S62190771 A JPS62190771 A JP S62190771A JP 3326586 A JP3326586 A JP 3326586A JP 3326586 A JP3326586 A JP 3326586A JP S62190771 A JPS62190771 A JP S62190771A
- Authority
- JP
- Japan
- Prior art keywords
- electrode forming
- insulating film
- gate electrode
- gate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000005669 field effect Effects 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 7
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3326586A JPS62190771A (ja) | 1986-02-17 | 1986-02-17 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3326586A JPS62190771A (ja) | 1986-02-17 | 1986-02-17 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190771A true JPS62190771A (ja) | 1987-08-20 |
| JPH0551177B2 JPH0551177B2 (enrdf_load_stackoverflow) | 1993-07-30 |
Family
ID=12381689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3326586A Granted JPS62190771A (ja) | 1986-02-17 | 1986-02-17 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190771A (enrdf_load_stackoverflow) |
-
1986
- 1986-02-17 JP JP3326586A patent/JPS62190771A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551177B2 (enrdf_load_stackoverflow) | 1993-07-30 |
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