JPS62186553A - Molded structure of wire bonding part - Google Patents

Molded structure of wire bonding part

Info

Publication number
JPS62186553A
JPS62186553A JP2854286A JP2854286A JPS62186553A JP S62186553 A JPS62186553 A JP S62186553A JP 2854286 A JP2854286 A JP 2854286A JP 2854286 A JP2854286 A JP 2854286A JP S62186553 A JPS62186553 A JP S62186553A
Authority
JP
Japan
Prior art keywords
molding agent
wire
wire bonding
bonding part
hard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2854286A
Other languages
Japanese (ja)
Other versions
JPH0785497B2 (en
Inventor
Kimitaka Suzawa
須澤　公尊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP61028542A priority Critical patent/JPH0785497B2/en
Publication of JPS62186553A publication Critical patent/JPS62186553A/en
Publication of JPH0785497B2 publication Critical patent/JPH0785497B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To secure the practical strength of a molding material, by using a hard molding agent at a direct contact part to a bonding part, and using a soft molding agent at the exposed part of wire. CONSTITUTION:Wire is pushed and connected in bonding. Therefore, the shape of the wire is deformed in a ruptured manner. The wire is bent at this place. Therefore, the part shown by an arrow becomes weak against vibration and impact. Then, the weak part of the bonded part 4 is made to be a structure of a hard molding agent 1. The entire exposed part of the wire 3 is made to have a structure of a soft molding agent 2. As the hard molding agent, Pelcoat XC-1914-1 (trade name) is used. As the soft molding agent, Shin-etsu silicon K66 (trade name) is used.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体素子及び、回路基板間等の電気的接続
部の構造に関する。特にワイヤボンディングを用いて、
電気的接続を行なう部分のモールド構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a structure of an electrical connection between a semiconductor element and a circuit board. Especially using wire bonding,
This invention relates to a mold structure for a portion that makes electrical connections.

〔発明の概要〕[Summary of the invention]

本発明は、ワイヤボンディング部のモールド構造にお≠
て、モールド剤を２種類使い、ボンド部に直接液する部
分には、硬いモールド剤、ワイヤの露出部には、軟らか
いモールド剤を用いる構造をとることによって、実用強
度を確保することを可能にしたものである。The present invention is directed to the mold structure of the wire bonding part.
By using two types of molding agents, a hard molding agent is used for the part where the liquid is applied directly to the bonding part, and a soft molding agent is used for the exposed part of the wire, it is possible to ensure practical strength. This is what I did.

〔従来の技術〕[Conventional technology]

従来のワイヤボンディングによる結線においては、ボン
ディング部のモールドを、一種類のモールド剤を用いて
行なうことが一般的でありた。In connection by conventional wire bonding, the bonding portion is generally molded using one type of molding agent.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、このような従来のモールド構造においては、モ
ールド剤が、軟らかな場合には、歪等の変形には強いが
、強い震動や衝撃が、加わった時にボンド部が切れてし
まうという欠点があった。However, in such conventional mold structures, if the molding agent is soft, it is resistant to deformation such as distortion, but it has the disadvantage that the bond part breaks when strong vibrations or shocks are applied. Ta.

一方、モールド剤が硬いものの場合には、衝撃等に対し
ては、耐久力があるが二枚の基板にまたいでボンディン
グを行なうなど、モールド後において大きい変化が加わ
りやすい場合には、モールド剤が硬いため無料な力が加
わって、切れてしまうという問題点を有していた。本発
明は、このような問題点を解決するもので、その目的と
するところは、２種類のモールド剤を組み合わせ、ボン
ド部、ワイヤ部の強度を出し、断線などを防ぐところに
ある。On the other hand, if the molding agent is hard, it will be durable against impacts, etc., but if the molding agent is likely to undergo large changes after molding, such as when bonding is performed across two substrates, the molding agent may be hard. Since it is hard, it has the problem that free force is applied to it, causing it to break. The present invention is intended to solve these problems, and its purpose is to combine two types of molding agents to increase the strength of the bond portion and wire portion and to prevent wire breakage.

〔問題点が解決するための手段〕[Means for solving problems]

本発明のワイヤボンディング部のモールド構造において
は、半導体素子間ないし回路基板間、あるいは、半導体
素子と回路基板間の電気的接続にワイヤボンディングを
用いる電気回路において、ワイヤボンディング部のボン
ド部が、硬度の大きい第１のモールド剤で薄く覆われて
いるとともに、ワイヤボンディング部全体が、硬度の小
さい第２のモールド剤で覆われていることを特徴とする
〔実施例〕 第１図は、本発明のワイヤボンディング部のモールド構
造である。２枚の基板を使用し、基板６と基板７が、ド
ライバーテープ５で接続されている。基板６と基板７に
またがってワイヤボンディングが行なわれている。ボン
ド部のワイヤの形状は、第２ｖ！Ｊのようになる。これ
は、ボンディングの際ワイヤを押しつけて接続するため
ワイヤの形状が少しつぶれるように変形するためである
。更に、そこから、ワイヤは曲げている。このため、第
２図の矢印の部分が震動や衝撃に弱くなってしまう。そ
こで、このボンド部の弱い部分を硬いモールド構造とす
る。In the mold structure of the wire bonding part of the present invention, in an electric circuit that uses wire bonding for electrical connection between semiconductor elements or circuit boards, or between a semiconductor element and a circuit board, the bond part of the wire bonding part has a hardness. [Example] Fig. 1 shows the structure of the present invention, in which the wire bonding part is thinly covered with a first molding agent having a high hardness, and the entire wire bonding part is covered with a second molding agent having a low hardness. This is the mold structure of the wire bonding part. Two boards are used, and a board 6 and a board 7 are connected with a driver tape 5. Wire bonding is performed across the substrates 6 and 7. The shape of the wire at the bond part is 2nd v! It becomes like J. This is because the shape of the wire is deformed so that it is slightly crushed because the wire is pressed and connected during bonding. Furthermore, from there the wire is bent. As a result, the area indicated by the arrow in Figure 2 becomes vulnerable to vibrations and shocks. Therefore, the weak part of this bond part is made into a hard mold structure.

次に、ワイヤの露出部分全体を軟らかいモールド構造と
する。Next, the entire exposed portion of the wire is made into a soft mold structure.

本実施例においては、硬い第１のモールド剤として、商
品名ペルコート　Ｘｏ−１９１４−１を使用し、ディス
ペンサーによって、ボンド部が充分覆われるよう塗布し
たのち、８０℃で１時間硬化させて、硬いモールド構造
を形成した。更に、軟らかい第２のモールド剤に、商品
名信越シリコーン　Ｋ６６を使用し、ワイヤボンディン
グ部全体が、基板の一部を含んで充分覆われる量塗布し
て後、１０時間室内放置して、第２のモールド構造を形
成した。In this example, as a hard first molding agent, Pelcoat A mold structure was formed. Furthermore, a soft second molding agent (trade name: Shin-Etsu Silicone K66) was applied in an amount sufficient to cover the entire wire bonding part, including a part of the board, and then left indoors for 10 hours. A mold structure was formed.

〔発明の効果〕〔Effect of the invention〕

本発明によるモールド構造の電気回路装置に対し、震動
、熱衝撃、高温高湿雰囲気中放置試験等を、実施したが
、何ら問題は発生せず、高い信頼性を示した―The electric circuit device with the molded structure according to the present invention was subjected to vibration, thermal shock, and exposure tests in a high-temperature, high-humidity atmosphere, etc., but no problems occurred and it showed high reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、ワイヤボンディング部のモールド剤の塗り方
の一実施例を示す図。 第２図は、ボンド部のワイヤの形状を示す図。 １・・・・・・硬いモールド剤 ２・・・・・・軟らかいモールド剤 ３・・・・・・ワイヤ ４・・・・・・ボンド部 ５・・・・・・ドライバーテープ ６．７・・・・・・基　板 以上FIG. 1 is a diagram showing an example of how to apply molding agent to a wire bonding part. FIG. 2 is a diagram showing the shape of the wire in the bond portion. 1... Hard molding agent 2... Soft molding agent 3... Wire 4... Bond part 5... Driver tape 6.7. ...More than the board

Claims (2)

【特許請求の範囲】[Claims] （１）半導体素子間ないし回路基板間あるいは、半導体
素子と回路基板間の電気的接続にワイヤボンディングを
用いる電気回路において、ワイヤボンディング部のボン
ド部が、硬度の大きい第１のモールド剤で薄く覆われて
いるとともに、ワイヤボンディング部全体が、硬度の小
さい第２のモールド剤で覆われていることを特徴とする
ワイヤボンディング部のモールド構造。(1) In an electric circuit that uses wire bonding for electrical connection between semiconductor elements or circuit boards, or between semiconductor elements and circuit boards, the bond part of the wire bonding part is thinly covered with a first molding agent having a high hardness. A mold structure for a wire bonding part, characterized in that the wire bonding part is entirely covered with a second molding agent having a low hardness. （２）第１のモールド剤が、エポキシ樹脂硬化物であり
、第２のモールド剤が、シリコン樹脂硬化物であること
を特徴とする、特許請求の範囲第１項記載のワイヤボン
ディング部のモールド構造。(2) A mold for a wire bonding part according to claim 1, wherein the first molding agent is a cured epoxy resin and the second molding agent is a cured silicone resin. structure.
JP61028542A 1986-02-12 1986-02-12 Mold structure of wire bonding part Expired - Lifetime JPH0785497B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61028542A JPH0785497B2 (en) 1986-02-12 1986-02-12 Mold structure of wire bonding part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61028542A JPH0785497B2 (en) 1986-02-12 1986-02-12 Mold structure of wire bonding part

Publications (2)

Publication Number Publication Date
JPS62186553A true JPS62186553A (en) 1987-08-14
JPH0785497B2 JPH0785497B2 (en) 1995-09-13

Family

ID=12251549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61028542A Expired - Lifetime JPH0785497B2 (en) 1986-02-12 1986-02-12 Mold structure of wire bonding part

Country Status (1)

Country Link
JP (1) JPH0785497B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0403783A2 (en) * 1989-06-20 1990-12-27 International Business Machines Corporation High strength low stress encapsulation of interconnected semiconductor devices
JPH08288426A (en) * 1995-04-20 1996-11-01 Nec Corp Semiconductor device
US8258528B2 (en) 2008-06-25 2012-09-04 Stanley Electric Co., Ltd. Semiconductor light-emitting device
JP2013105929A (en) * 2011-11-15 2013-05-30 Koito Mfg Co Ltd Light emitting module, manufacturing method of the same, and lamp fitting for vehicle

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771137A (en) * 1980-10-22 1982-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59152651A (en) * 1983-02-21 1984-08-31 Seiko Epson Corp Manufacture of semiconductor device
JPS61205144U (en) * 1985-06-13 1986-12-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771137A (en) * 1980-10-22 1982-05-01 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59152651A (en) * 1983-02-21 1984-08-31 Seiko Epson Corp Manufacture of semiconductor device
JPS61205144U (en) * 1985-06-13 1986-12-24

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0403783A2 (en) * 1989-06-20 1990-12-27 International Business Machines Corporation High strength low stress encapsulation of interconnected semiconductor devices
JPH08288426A (en) * 1995-04-20 1996-11-01 Nec Corp Semiconductor device
US8258528B2 (en) 2008-06-25 2012-09-04 Stanley Electric Co., Ltd. Semiconductor light-emitting device
JP2013105929A (en) * 2011-11-15 2013-05-30 Koito Mfg Co Ltd Light emitting module, manufacturing method of the same, and lamp fitting for vehicle

Also Published As

Publication number Publication date
JPH0785497B2 (en) 1995-09-13

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