JPH0785497B2 - Mold structure of wire bonding part - Google Patents
Mold structure of wire bonding partInfo
- Publication number
- JPH0785497B2 JPH0785497B2 JP61028542A JP2854286A JPH0785497B2 JP H0785497 B2 JPH0785497 B2 JP H0785497B2 JP 61028542 A JP61028542 A JP 61028542A JP 2854286 A JP2854286 A JP 2854286A JP H0785497 B2 JPH0785497 B2 JP H0785497B2
- Authority
- JP
- Japan
- Prior art keywords
- wire bonding
- mold structure
- molding agent
- wire
- bonding part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体素子及び、回路基板間等の電気的接続
部の構造に関する。特にワイヤボンディングを用いて、
電気的接続を行なう部分のモールド構造に関する。Description: TECHNICAL FIELD The present invention relates to a structure of a semiconductor element and an electrical connection portion between circuit boards and the like. Especially with wire bonding,
The present invention relates to a mold structure of a portion for making electrical connection.
本発明は、ワイヤボンディング部のモールド構造におい
て、モールド剤を2種類使い、ボンド部に直接接する部
分には、硬いモールド剤、ワイヤの露出部には、軟らか
いモールド剤を用いる構造をとることによって、実用強
度を確保することを可能にしたものである。According to the present invention, in the mold structure of the wire bonding portion, two types of mold agents are used, a hard mold agent is used for the portion directly contacting the bond portion, and a soft mold agent is used for the exposed portion of the wire. It is possible to secure practical strength.
従来のワイヤボンディングによる結線においては、ボン
ディング部のモールドを、一種類のモールド剤を用いて
行なうことが一般的であった。In the conventional connection by wire bonding, it is common to mold the bonding part using one type of molding agent.
しかし、このような従来のモールド構造においては、モ
ールド剤が、軟らかな場合には、歪等の変形には強い
が、強い震動や衝撃が、加わった時にボンド部が切れて
しまう欠点があった。一方、モールド剤が硬いものの場
合には、衝撃等に対しては、耐久力があるが二枚の基板
にまたいてボンディングを行なうなど、モールド後にお
いて大きい変化が加わりやすい場合には、モールド剤が
硬いため無利な力が加わって、切れてしまうという問題
点を有していた。本発明は、このような問題点を解決す
るもので、その目的とするところは、2種類のモールド
剤を組み合わせ、ボンド部,ワイヤ部の強度を出し、断
線などを防ぐところにある。However, in such a conventional mold structure, when the molding agent is soft, it is strong against deformation such as distortion, but there is a drawback that the bond portion is broken when strong vibration or shock is applied. . On the other hand, if the molding agent is hard, it is durable against shock and the like, but if a large change is likely to occur after molding, such as bonding across two substrates, the molding agent should be used. Since it is hard, it has a problem that it is cut by being applied with an unnecessary force. The present invention solves such a problem, and an object of the present invention is to combine two types of molding agents to increase the strength of the bond portion and the wire portion and prevent disconnection.
本発明は、回路基板間の電気的接続にワイヤボンディン
グが用いられてなる電気回路のワイヤボンディング部の
モールド構造において、前記ワイヤボンディング部の両
端のボンド部が硬度の大きい第1のモールド剤で覆われ
てなり、かつ前記ワイヤボンディング部全体が硬度の小
さい第2のモールド剤で覆われてなることを特徴とす
る。According to the present invention, in a mold structure of a wire bonding portion of an electric circuit in which wire bonding is used for electrical connection between circuit boards, bond portions at both ends of the wire bonding portion are covered with a first molding agent having high hardness. And the entire wire bonding portion is covered with a second molding agent having a low hardness.
第1図は、本発明のワイヤボンディング部のモールド構
造である。2枚の基板を使用し、基板6と基板7が、ド
ライバーテープ5で接続されている。基板6と基板7に
またがってワイヤボンディングが行なわれている。ボン
ド部のワイヤの形状は、第2図のようになる。これは、
ボンディングの際ワイヤを押しつけて接続するためワイ
ヤの形状が少しつぶれるように変形するためである。更
に、そこから、ワイヤは曲げている。このため、第2図
の矢印の部分が震動や衝撃に弱くなってしまう。そこ
で、このボンド部の弱い部分を硬いモールド構造とす
る。FIG. 1 shows the mold structure of the wire bonding portion of the present invention. Two substrates are used, and the substrate 6 and the substrate 7 are connected by the driver tape 5. Wire bonding is performed across the substrates 6 and 7. The shape of the wire at the bond portion is as shown in FIG. this is,
This is because the shape of the wire is deformed so as to be slightly collapsed because the wire is pressed and connected at the time of bonding. Furthermore, from there, the wire is bent. As a result, the portion indicated by the arrow in FIG. 2 is weakened by vibration and shock. Therefore, the weak portion of the bond portion is made into a hard mold structure.
次に、ワイヤの露出部分全体を軟らかいモールド構造と
する。Next, the exposed portion of the wire is made into a soft mold structure.
本実施例においては、硬い第1のモールド剤として、商
品名ベルコート XC−1914−1を使用し、ディスペンサ
ーによって、ボンド部が充分覆われるよう塗布したの
ち、80℃で1時間硬化させて、硬いモールド構造を形成
した。更に、軟らかい第2のモールド剤に、商品名信越
シリコーン K66を使用し、ワイヤボンディング部全体
が、基板の一部を含んで充分覆われる量塗布して後、10
時間室内放置して、第2のモールド構造を形成した。In this example, as the hard first molding agent, Bellcoat XC-19914-1 was used as a hard mold agent, and the dispenser was applied so that the bond portion was sufficiently covered, and then cured at 80 ° C. for 1 hour, A rigid mold structure was formed. Furthermore, after applying the product name Shin-Etsu Silicone K66 to the soft second mold agent, the entire wire bonding part is applied in a sufficient amount to cover a part of the substrate.
The chamber was left to stand for a period of time to form a second mold structure.
本発明によるモールド構造を用いた電気回路装置に対
し、振動、熱衝撃、高温高湿雰囲気中で放置試験等を実
施したが、何等問題は発生せず、高い信頼性を示した。The electric circuit device using the mold structure according to the present invention was subjected to a test such as vibration, thermal shock, a high temperature and high humidity atmosphere, and no problems occurred, and high reliability was exhibited.
本発明のワイヤボンディング部のモールド構造は、ワイ
ヤボンディング部の両端のボンド部が硬度の大きい第1
のモールド剤で覆われてなり、かつワイヤボンディング
部全体が硬度の小さい第2のモールド剤で覆われてなる
ようにしたことにより、歪み等の変形、強い振動、衝撃
が加わったときでも、両端のポンド部における断線とワ
イヤ部における断線を同時に防ぐことができるという効
果を有する。According to the mold structure of the wire bonding portion of the present invention, the bond portions at both ends of the wire bonding portion have high hardness.
Since it is covered with the second molding agent having low hardness and the entire wire bonding portion is covered with the second molding agent, even if deformation such as distortion, strong vibration, or shock is applied, It is possible to prevent disconnection at the pound portion and disconnection at the wire portion at the same time.
第1図は、ワイヤボンディング部のモールド剤の塗り方
の一実施例を示す図。 第2図は、ポンド部のワイヤの形状を示す図。 1……硬いモールド剤 2……軟らかいモールド剤 3……ワイヤ 4……ボンド部 5……ドライバーテープ 6,7……基板FIG. 1 is a diagram showing an example of how to apply a molding agent to a wire bonding portion. FIG. 2 is a diagram showing the shape of the wire of the pound portion. 1 …… Hard molding agent 2 …… Soft molding agent 3 …… Wire 4 …… Bond part 5 …… Driver tape 6,7 …… Substrate
Claims (2)
ングが用いられてなる電気回路のワイヤボンディング部
のモールド構造において、前記ワイヤボンディング部の
両端のボンド部が硬度の大きい第1のモールド剤で覆わ
れてなり、かつ前記ワイヤボンディング部全体が硬度の
小さい第2のモールド剤で覆われてなることを特徴とす
るワイヤボンディング部のモールド構造。1. In a mold structure of a wire bonding portion of an electric circuit in which wire bonding is used for electrical connection between circuit boards, bond portions at both ends of the wire bonding portion are made of a first molding agent having high hardness. A mold structure of a wire bonding part, characterized in that it is covered and the entire wire bonding part is covered with a second molding agent having a low hardness.
り、前記第2のモールド剤がシリコン樹脂であることを
特徴とする特許請求の範囲第1項記載のワイヤボンディ
ング部のモールド構造。2. The mold structure of a wire bonding portion according to claim 1, wherein the first molding agent is an epoxy resin and the second molding agent is a silicone resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61028542A JPH0785497B2 (en) | 1986-02-12 | 1986-02-12 | Mold structure of wire bonding part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61028542A JPH0785497B2 (en) | 1986-02-12 | 1986-02-12 | Mold structure of wire bonding part |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62186553A JPS62186553A (en) | 1987-08-14 |
JPH0785497B2 true JPH0785497B2 (en) | 1995-09-13 |
Family
ID=12251549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61028542A Expired - Lifetime JPH0785497B2 (en) | 1986-02-12 | 1986-02-12 | Mold structure of wire bonding part |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0785497B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0403783A3 (en) * | 1989-06-20 | 1991-07-17 | International Business Machines Corporation | High strength low stress encapsulation of interconnected semiconductor devices |
JPH08288426A (en) * | 1995-04-20 | 1996-11-01 | Nec Corp | Semiconductor device |
JP5340653B2 (en) | 2008-06-25 | 2013-11-13 | スタンレー電気株式会社 | Color conversion light emitting device |
JP5931410B2 (en) * | 2011-11-15 | 2016-06-08 | 株式会社小糸製作所 | LIGHT EMITTING MODULE, ITS MANUFACTURING METHOD, AND VEHICLE LIGHT |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771137A (en) * | 1980-10-22 | 1982-05-01 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59152651A (en) * | 1983-02-21 | 1984-08-31 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS61205144U (en) * | 1985-06-13 | 1986-12-24 |
-
1986
- 1986-02-12 JP JP61028542A patent/JPH0785497B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62186553A (en) | 1987-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |