JPS62182195A - ３−ｖ族化合物半導体の成長方法 - Google Patents
３−ｖ族化合物半導体の成長方法Info
- Publication number
- JPS62182195A JPS62182195A JP2314286A JP2314286A JPS62182195A JP S62182195 A JPS62182195 A JP S62182195A JP 2314286 A JP2314286 A JP 2314286A JP 2314286 A JP2314286 A JP 2314286A JP S62182195 A JPS62182195 A JP S62182195A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- temperature
- group
- substrate
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 14
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 9
- 238000007599 discharging Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2314286A JPS62182195A (ja) | 1986-02-04 | 1986-02-04 | ３−ｖ族化合物半導体の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2314286A JPS62182195A (ja) | 1986-02-04 | 1986-02-04 | ３−ｖ族化合物半導体の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62182195A true JPS62182195A (ja) | 1987-08-10 |
| JPH0532360B2 JPH0532360B2 (enrdf_load_stackoverflow) | 1993-05-14 |
Family
ID=12102310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2314286A Granted JPS62182195A (ja) | 1986-02-04 | 1986-02-04 | ３−ｖ族化合物半導体の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62182195A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0350744A (ja) * | 1989-07-18 | 1991-03-05 | Hitachi Cable Ltd | 電界効果トランジスタの製造方法 |
| US20100260222A1 (en) * | 2009-04-14 | 2010-10-14 | Sony Corporation | Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same |
-
1986
- 1986-02-04 JP JP2314286A patent/JPS62182195A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0350744A (ja) * | 1989-07-18 | 1991-03-05 | Hitachi Cable Ltd | 電界効果トランジスタの製造方法 |
| US20100260222A1 (en) * | 2009-04-14 | 2010-10-14 | Sony Corporation | Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same |
| US8658449B2 (en) * | 2009-04-14 | 2014-02-25 | Sony Corporation | Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532360B2 (enrdf_load_stackoverflow) | 1993-05-14 |
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