JPS62172752A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS62172752A
JPS62172752A JP61014933A JP1493386A JPS62172752A JP S62172752 A JPS62172752 A JP S62172752A JP 61014933 A JP61014933 A JP 61014933A JP 1493386 A JP1493386 A JP 1493386A JP S62172752 A JPS62172752 A JP S62172752A
Authority
JP
Japan
Prior art keywords
input
circuit
mosfet
channel
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61014933A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0255949B2 (enrdf_load_stackoverflow
Inventor
Akihiro Yamazaki
山崎　昭浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61014933A priority Critical patent/JPS62172752A/ja
Publication of JPS62172752A publication Critical patent/JPS62172752A/ja
Publication of JPH0255949B2 publication Critical patent/JPH0255949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP61014933A 1986-01-27 1986-01-27 半導体集積回路 Granted JPS62172752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61014933A JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61014933A JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS62172752A true JPS62172752A (ja) 1987-07-29
JPH0255949B2 JPH0255949B2 (enrdf_load_stackoverflow) 1990-11-28

Family

ID=11874768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61014933A Granted JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS62172752A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290887B1 (ko) * 1998-05-14 2001-07-12 김영환 고전압보호회로

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4488074A1 (de) 2023-07-07 2025-01-08 LANXESS Deutschland GmbH Kautschukmischungen enthaltend polyethylenimin und mindestens ein prozesshilfsmittel enthaltend mindestens eine fettsäure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290887B1 (ko) * 1998-05-14 2001-07-12 김영환 고전압보호회로

Also Published As

Publication number Publication date
JPH0255949B2 (enrdf_load_stackoverflow) 1990-11-28

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees